T1P29B Search Results

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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: PANASONIC INDL/ELEK -CIO 1SE D • 1,132055 QG1D4E1 0 ■ Silicon NPN Power Transistors TO-220 Package Absolute Maximum Ratings Ta=25°C Rem TIP29A T1P29B TIP29C Unit 80 100 V 80 100 V Symbol TIP29 VcBO 40 60 Collector-Emitter Voltage VCEO 40 60 Emitter-Base Voltage	OCR Scan	PDF	O-220 TIP29 TIP29A T1P29B TIP29C TIP30, TIP30A, TIP30B, TIP30C 200mA
TIP29 Abstract: IEC134 TIP29B TIP30 TIP50 Text: TIP29; 29A T1P29B; 29C J PHILIPS INTERNATIONAL SbE D I 713iDfl2fci □ □ 434HE= TIE WM PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS T-33-o*{ NPN silicon transistors in a plastic envelope intended fo r use in ou tput stages o f audio and television am plifier circuits where high peak powers can occur. PNP complements are TIP30 series.	OCR Scan	PDF	TIP29; TIP29B; 0D4344t> TIP30 TIP29 200Copyrighted T-33-09 711Dfl2L IEC134 TIP29B TIP50
tip29 equivalent Abstract: No abstract text available Text: Power Transistors TIP29, TIP29A, TIP29B, TIP29C H A RR IS S E M I C O N D S E CT OR 27E D 990 4 3 0 2 27 1 0 G 2 0 5 3 2 b • HAS File Number B Epitaxial-Base, Silicon N-P-N VERSAWATT Transistors For P o w e r-A m p lifie r an d H ig h -S p e e d -S w itc h in g A p p licatio n s	OCR Scan	PDF	TIP29, TIP29A, TIP29B, TIP29C 43D227Ì 002QS3S TIP29C tip29 equivalent
Untitled Abstract: No abstract text available Text: T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages, general purpose amplifier and high-speed switching applications.	OCR Scan	PDF	T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF OT186 TIP30F, TIP30AF, TIP30BF, TIP30CF
TIP290 Abstract: TIP29CF TIP30CF TIP29AF TIP29BF TIP29DF TIP29F TIP30AF TIP30BF TIP30DF Text: T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envelope w ith an electrically insulated mounting base, intended fo r use in audio o u tp u t stages, general purpose am plifier and high-speed switching applications.	OCR Scan	PDF	T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF OT186 TIP30F, TIP30AF, TIP30BF, TIP30CF TIP290 TIP29CF TIP29AF TIP29BF TIP29DF TIP29F TIP30AF TIP30BF TIP30DF
saa 1094 Abstract: LG tv remote control schematic ir ic transistor BU 109 T1P29B thermo couple t Text: fu ¡in fitti lattàia, Cutot lu i h a i bltqm u F lG l'R E 18. 4-20mA Current Loop Receiver with Input Overload Protection. PO L RE 19. 0-20mA/3-5V Receiver l/sing RCV420. 4 .: s Burr-Brown IC Data Book—Linear Products I Or, btt Culutr Sirria 2/ MM-Wfftt Utt Otifl	OCR Scan	PDF	4-20mA 0-20mA/3-5V RCV420. 75tiV/ 47000HV) 92\lA saa 1094 LG tv remote control schematic ir ic transistor BU 109 T1P29B thermo couple t
TIP29 Abstract: TIP29B TIP30 Text: TIP29; 29A TIP29B; 29C I^ SILICON EPITAXIAL BASE POWER TRANSISTORS NPN silicon transistors in a plastic envelope intended for use in output stages of audio and television amplifier circuits where high peak powers can occur. PNP complements are TIP30 series.	OCR Scan	PDF	TIP29; TIP29B; TIP30 TIP29 O-220. 7Z82166 ApriM981 bbS3T31 TIP29B
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan	PDF
LC02A Abstract: T1P29C T1P29A T1P29B TIP29 TIP29A TIP29C TIP30 TIP30A TIP30B Text: PA N A SO N IC IN D L /E L E K -C IO 12E D ^32052 Silicon NPN Power Transistors QG1D4E1 T -Z Z -C ñ TO-220 Package Absolute Maximum Ratings Ta=25°C Rem Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current " Peak Collector Current	OCR Scan	PDF	QG10421 r-33-o? O-220 Ta-253C) TIP29 TIP29A T1P29B TIP29C TIP30, TIP30A, LC02A T1P29C T1P29A TIP30 TIP30A TIP30B
2sc1061 Abstract: 2SC1626 2N6108 Text: Power Transistors TYPE POLA CASE NO. RITY U te min max Ic A V ce (V) max (V) fl COMPLE min MENTARY lc (A) (MHz) TYPE D45C12 MH0810 MH0816 MH0818 MH0870 P P P P P TO-220 TO-220 TO-220 TO-220 TO-220 30 12 10 10 30 4 3 1 1 4 80 30 60 80 50 20 40 40 40 40	OCR Scan	PDF	D45C12 MH0810 MH0816 MH0818 MH0870 MH8100 MH8106 MH8108 MH8500 MH8700 2sc1061 2SC1626 2N6108
T1P29 Abstract: T1P29B T1P29A Text: TIP29, TIP29A, TIP29B, TIP29C NPN SILICON POWER TRANSISTORS Copyright 1997, Pow«r Innovations Limited, UK • Designed for Complementary Use with the TIP30 Series • 30 W at 25°C Case Temperature • 1 A Continuous Collector Current • 3 A Peak Collector Current	OCR Scan	PDF	TIP29, TIP29A, TIP29B, TIP29C TIP30 T1P29 TIP29A T1P29B TIP29 T1P29A
T1P29C Abstract: TIP30C LC02A T1P29B TIP29 TIP29A TIP29C TIP30 TIP30A TIP30B Text: P A N A SO N IC IN D L / E L E K -C IO 15E » fc ^ S Ö S E Silicon NPN Power Transistors DD1D4E1 D r-3 3 -o ? TO-220 Package Absolute Maximum Ratings Ta=250C Item Collector-Base Voltage Collector-Eniitter Voltage Emitter-Base Voltage Collector Current "	OCR Scan	PDF	O-220 r-33-o? TIP29 TIP29A T1P29B TIP29C TIP30, TIP30A, TIP30B, TIP30C T1P29C TIP30C LC02A TIP30 TIP30A TIP30B
s0343 Abstract: T1P29B Text: TIP29; 29A TIP29B; 29C PHILIPS INTERNATIONAL SbE D • 711002b □□4344b TIE « P H I N ' SILICON EPITAXIAL BASE POWER TRANSISTORS N P N silicon transistors in a plastic envelope intended fo r use in ou tp u t stages o f audio and television am plifier circuits where high peak powers can occur. P N P com plem ents are T IP 3 0 series.	OCR Scan	PDF	TIP29; TIP29B; 711002b 4344b 711005b T-33-09 s0343 T1P29B