MH0816 Search Results
MH0816 Datasheets (1)
Part |
ECAD Model |
Manufacturer |
Description |
Curated |
Datasheet Type |
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MH0816 | Micro Electronics | Semiconductor Device Data Book | Scan |
MH0816 Datasheets Context Search
Catalog Datasheet |
Type |
Document Tags |
PDF |
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2N3633
Abstract: TIP300 2N3609 2SA8140 MH0816 BCX53 Rohm 2sb631 hitachi 2N3566 2N3519 sk3025
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Original |
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2n4889
Abstract: 2N4858 TEXAS 2N4418 2sa777 2n4891 2N4917 2SA8150 6ae diode 2N4417 2N6556
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Original |
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Tip300
Abstract: 2SA8140 BCX53 Rohm 2SA8150 rohm 6AE 2SA1358Y MM4006 2SA1358-Y 2SA815 2sb631 hitachi
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Original |
202AC 220AB 126var Tip300 2SA8140 BCX53 Rohm 2SA8150 rohm 6AE 2SA1358Y MM4006 2SA1358-Y 2SA815 2sb631 hitachi | |
Contextual Info: MH0816 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80è V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) |
Original |
MH0816 Freq50M | |
2sc1061
Abstract: 2SC1626 2N6108
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OCR Scan |
D45C12 MH0810 MH0816 MH0818 MH0870 MH8100 MH8106 MH8108 MH8500 MH8700 2sc1061 2SC1626 2N6108 | |
2n6125Contextual Info: Power Transistors TYPE POLA NO. RITY M AXIM UM RATINGS CASE Pd IC VCEO mW (A) (V) H FE VCE(sat) min max IT CO M P L E IC VCE max IC min MENTARY (mA) (V) (V) (A) (MHz) TYPE 0.5 0.2 0.2 1 0.5 2 2 2 2 2 0.8 0.5 0.5 0.8 0.8 2 0.5 0.5 2 2 30 50 50 5 30 MH8100 |
OCR Scan |
MH8100 MH8106 MH8108 MH8700 MH0810 MH0816 MH0818 2n6125 | |
2SA532
Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
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OCR Scan |
057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N4004 1N4005 2SA532 BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357 |