swiching 30A current source
Abstract: 48N60C3 ixgh48n60c3 IXGH 48n60c3
Text: Preliminary Technical Information GenX3TM 600V IGBT IXGA48N60C3 IXGH48N60C3 IXGP48N60C3 High Speed PT IGBTs for 40-100kHz switching VCES = IC110 = VCE sat ≤ tfi(typ) = 600V 48A 2.5V 38ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C
|
Original
|
PDF
|
40-100kHz
IXGA48N60C3
IXGH48N60C3
IXGP48N60C3
IC110
O-263
IC110
O-220
48N60C3
0-07-A
swiching 30A current source
IXGH 48n60c3
|
48N60C3
Abstract: IXGH48N60C3 IXGH 48n60c3 swiching 30A current source IXGA48N60C3 IXGP48N60C3 48N60
Text: GenX3TM 600V IGBT High Speed PT IGBTs for 40-100kHz switching IXGA48N60C3 IXGH48N60C3 IXGP48N60C3 VCES = IC110 = VCE sat ≤ tfi(typ) = 600V 48A 2.5V 38ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
|
Original
|
PDF
|
40-100kHz
IXGA48N60C3
IXGH48N60C3
IXGP48N60C3
IC110
O-263
48N60C3
1-23-09-B
IXGH48N60C3
IXGH 48n60c3
swiching 30A current source
IXGA48N60C3
IXGP48N60C3
48N60
|
12V 30A diode
Abstract: swiching 30A current source IRGP30B60KD-EP 035H C-150 IRFPE30
Text: PD - 95120 IRGP30B60KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.
|
Original
|
PDF
|
IRGP30B60KD-EP
O-247AD
O-247AD
O-247AC
IRFPE30
12V 30A diode
swiching 30A current source
IRGP30B60KD-EP
035H
C-150
IRFPE30
|
irf 1830
Abstract: C-150 IRF1010 IRF530S IRGB30B60K IRGS30B60K IRGSL30B60K
Text: PD - 94799 IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
|
Original
|
PDF
|
IRGB30B60K
IRGS30B60K
IRGSL30B60K
O-220AB
O-262
O-220AB
AN-994.
irf 1830
C-150
IRF1010
IRF530S
IRGB30B60K
IRGS30B60K
IRGSL30B60K
|
AN-994
Abstract: C-150 IRGB30B60K IRGS30B60K IRGSL30B60K
Text: PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
|
Original
|
PDF
|
4799A
IRGB30B60K
IRGS30B60K
IRGSL30B60K
O-220AB
O-262
O-220AB
AN-994
C-150
IRGB30B60K
IRGS30B60K
IRGSL30B60K
|
Untitled
Abstract: No abstract text available
Text: IXGH56N60B3D1 GenX3TM 600V IGBT w/ Diode VCES = = IC110 VCE sat 600V 56A 1.80V Medium-Speed-Low-Vsat PT IGBT 5-40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 600 600 V
|
Original
|
PDF
|
IXGH56N60B3D1
IC110
5-40kHz
O-247
|
Untitled
Abstract: No abstract text available
Text: PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
|
Original
|
PDF
|
4799A
IRGB30B60K
IRGS30B60K
IRGSL30B60K
O-220AB
O-262
AN-994.
|
irf 1830
Abstract: 1085 CT 600v 30a IGBT TRANSISTOR D 1785 irf 44 n AN-994 C-150 IRGB30B60K IRGS30B60K IRGSL30B60K
Text: PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
|
Original
|
PDF
|
4799A
IRGB30B60K
IRGS30B60K
IRGSL30B60K
O-220AB
O-262
AN-994.
irf 1830
1085 CT
600v 30a IGBT
TRANSISTOR D 1785
irf 44 n
AN-994
C-150
IRGB30B60K
IRGS30B60K
IRGSL30B60K
|
Untitled
Abstract: No abstract text available
Text: GenX3TM 600V IGBT VCES = IC110 = VCE sat ≤ IXGH56N60B3D1 Medium speed low Vsat PT IGBTs 5-40 kHz switching Symbol Test Conditions TO-247 (IXGH) Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM 600 600 V V Continuous
|
Original
|
PDF
|
IC110
IXGH56N60B3D1
O-247
|
irgb30b60kpbf
Abstract: C-150 IRGS30B60K IRGSL30B60K IRL3103L
Text: PD - 95356 IRGB30B60KPbF IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.
|
Original
|
PDF
|
IRGB30B60KPbF
IRGS30B60K
IRGSL30B60K
O-220
O-220AB
IRGB30B60KPbF
O-262
O-220AB
C-150
IRGS30B60K
IRGSL30B60K
IRL3103L
|
IXGH56N60B3D1
Abstract: IXGH 56N60B3
Text: IXGH56N60B3D1 GenX3TM 600V IGBT VCES = IC110 = VCE sat ≤ Medium speed low Vsat PT IGBTs 5-40 kHz switching Symbol Test Conditions TO-247 (IXGH) Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM 600 600 V V Continuous
|
Original
|
PDF
|
IXGH56N60B3D1
IC110
O-247
IXGH56N60B3D1
IXGH 56N60B3
|
transistor c 2335
Abstract: C-150 IRFI840G IRGIB15B60KD1
Text: PD- 94599 IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
|
Original
|
PDF
|
IRGIB15B60KD1
O-220
IRFI840G
O-220
transistor c 2335
C-150
IRFI840G
IRGIB15B60KD1
|
transistor BR 9013
Abstract: C-150 IRFI840G IRGIB15B60KD1 transistor c 2335
Text: PD- 94599A IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
|
Original
|
PDF
|
4599A
IRGIB15B60KD1
O-220
IRFI840G
O-220
transistor BR 9013
C-150
IRFI840G
IRGIB15B60KD1
transistor c 2335
|
60N60C2D1
Abstract: No abstract text available
Text: IXGK 60N60C2D1 VCES IXGX 60N60C2D1 I C25 VCE sat C2-Class High Speed IGBTs tfi(typ) HiPerFASTTM IGBT with Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM
|
Original
|
PDF
|
60N60C2D1
IC110
O-264
IF110
PLUS247
0-06A
|
|
|
transistor BR 9013
Abstract: C-150 IRFI840G IRGIB15B60KD1 swiching 30A current source
Text: PD- 94599A IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
|
Original
|
PDF
|
4599A
IRGIB15B60KD1
O-220
IRFI840G
O-220
transistor BR 9013
C-150
IRFI840G
IRGIB15B60KD1
swiching 30A current source
|
C-150
Abstract: IRF1010 IRF530S IRGB15B60KD IRGS15B60KD IRGSL15B60KD IRL3103L
Text: PD - 94383C IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
|
Original
|
PDF
|
94383C
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
O-220AB
O-220AB
AN-994.
O-220
C-150
IRF1010
IRF530S
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
IRL3103L
|
C-150
Abstract: IRF1010 IRF530S IRGB15B60KD IRGS15B60KD IRGSL15B60KD IRL3103L
Text: PD - 94383B IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
|
Original
|
PDF
|
94383B
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
O-220AB
O-220AB
AN-994.
O-220
C-150
IRF1010
IRF530S
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
IRL3103L
|
IRGS15B60KD
Abstract: IRGSL15B60KD AN-994 C-150 IRGB15B60KD
Text: PD - 94383D IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
|
Original
|
PDF
|
94383D
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
O-220AB
AN-994.
O-220
IRGS15B60KD
IRGSL15B60KD
AN-994
C-150
IRGB15B60KD
|
AN-994
Abstract: C-150 IRGS15B60KD IRGSL15B60KD IRGB15B60KDPBF
Text: PD - 95194 IRGB15B60KDPbF IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
|
Original
|
PDF
|
IRGB15B60KDPbF
IRGS15B60KD
IRGSL15B60KD
O-220
O-220AB
O-262
IRGB15B60KDPbF
IRGS15B60KD
AN-994.
AN-994
C-150
IRGSL15B60KD
|
Untitled
Abstract: No abstract text available
Text: PD - 94383D IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
|
Original
|
PDF
|
94383D
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
O-220AB
AN-994.
O-220
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA DISCRETE/OPTO 4SE » • ^0^7250 □ GlV'ìTfl 1 ■ T 0 S 4 TOSHIBA FIELD EFFECT TRANSISTOR_ Y T F P 9*59 SILICON N CHANNEL MOS TYPE (ir - YTFPZoZ MOSI) INDUSTRIAL APPLICATIONS Unit In mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
|
OCR Scan
|
PDF
|
100nA
-250u
00A/us
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA DISCRETE/OPTO 45E D ^□^7250 0017^7^ TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (ir - fl • TOSM - YTFP251 MOSI) INDUSTRIAL APPLICATIONS Unit in HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. l&SMAX. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR
|
OCR Scan
|
PDF
|
YTFP251
070fl
lDSS-250uA
250uA
Ta-25Â
f100V
ID-30A
IDR-30A
00A/us
|
swiching 30A current source
Abstract: YTFP253
Text: i TOSHIBA FIELD EFFECT TRANSISTOR y r r p ^ SILICON N CHANNEL MOS TYPE tt - MOSI YTFP253 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. 1 &9UAX. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 0124Û* DRIVE APPLICATIONS.
|
OCR Scan
|
PDF
|
YTFP253
0-09OE
250uA
RGS-20kfi)
ID-16A
ID-16A
00A/us
IDR-30A
swiching 30A current source
YTFP253
|
200v dc voltage regulator
Abstract: swiching transistor VDs-200V ISS16
Text: TOSHIBA FIELD EFFECT YTFP9R9 SILICON N CHANNEL MOS TYPE it - MOSI YTFPZ5Z INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. 1&9MAX. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR
|
OCR Scan
|
PDF
|
0-09fi
VDS-200V
Ta-25
RGS-20kiî
VGS-10V
00A/us
200v dc voltage regulator
swiching transistor
VDs-200V
ISS16
|
