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Infineon Technologies AG AUIRGS30B60K IGBT 600V 78A 370W D2PAK
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DigiKey	AUIRGS30B60K	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IRGS30B60KPBF IGBT 600V 78A 370W D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRGS30B60KPBF	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IRGS30B60KTRRP IGBT 600V 78A 370W D2PAK
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DigiKey	IRGS30B60KTRRP	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	IRGS30B60KTRRP	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	IRGS30B60KTRRP	Digi-Reel			1	1 $4.09 10 $4.09 100 $4.09 1000 $4.09 10000 $4.09	Buy Now
Infineon Technologies AG AUIRGS30B60KTRL IGBT 600V 78A 370W D2PAK
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DigiKey	AUIRGS30B60KTRL	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
International Rectifier IRGS30B60KTRRP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IRGS30B60KTRRP		6			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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IRGS30B60K Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRGS30B60K		International Rectifier	INSULATED GATE BIPOLAR TRANSISTOR		Original	PDF
IRGS30B60K		International Rectifier	600V UltraFast 10-30 kHz IGBT in a D2-Pak package; A IRGS30B60K with Standard Packaging		Original	PDF
IRGS30B60K		International Rectifier	Insulated Gate Bipolar Transistor		Original	PDF
IRGS30B60KPBF		International Rectifier	600V UltraFast 10-30 kHz IGBT in a D2-Pak package; Similar to IRGS30B60K with Lead Free Packaging		Original	PDF
IRGS30B60KPBF		International Rectifier			Original	PDF
IRGS30B60KTRRP		International Rectifier	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 78A 370W D2PAK		Original	PDF

IRGS30B60K Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
irf 1830 Abstract: 1085 CT 600v 30a IGBT TRANSISTOR D 1785 irf 44 n AN-994 C-150 IRGB30B60K IRGS30B60K IRGSL30B60K Text: PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	4799A IRGB30B60K IRGS30B60K IRGSL30B60K O-220AB O-262 AN-994. irf 1830 1085 CT 600v 30a IGBT TRANSISTOR D 1785 irf 44 n AN-994 C-150 IRGB30B60K IRGS30B60K IRGSL30B60K	PDF
irgb30b60kpbf Abstract: C-150 IRGS30B60K IRGSL30B60K IRL3103L Text: PD - 95356 IRGB30B60KPbF IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.	Original	IRGB30B60KPbF IRGS30B60K IRGSL30B60K O-220 O-220AB IRGB30B60KPbF O-262 O-220AB C-150 IRGS30B60K IRGSL30B60K IRL3103L	PDF
Untitled Abstract: No abstract text available Text: PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	4799A IRGB30B60K IRGS30B60K IRGSL30B60K O-220AB O-262 AN-994.	PDF
Untitled Abstract: No abstract text available Text: PD - 97003 IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA	Original	IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF O-220AB IRGB30B60KPbF O-262 AN-994. O-220AB	PDF
AN-994 Abstract: C-150 IRGSL30B60K Text: PD - 97003 IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA	Original	IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF O-220AB IRGB30B60KPbF O-262 AN-994. O-220AB AN-994 C-150 IRGSL30B60K	PDF
SL30B60K Abstract: C-150 IRF530S IRGS30B60K IRGSL30B60K IRL3103L wf-3 Text: PD - 94741 IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 150°C.	Original	IRGS30B60K IRGSL30B60K O-262 AN-994. SL30B60K C-150 IRF530S IRGS30B60K IRGSL30B60K IRL3103L wf-3	PDF
irf 1830 Abstract: C-150 IRF1010 IRF530S IRGB30B60K IRGS30B60K IRGSL30B60K Text: PD - 94799 IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	IRGB30B60K IRGS30B60K IRGSL30B60K O-220AB O-262 O-220AB AN-994. irf 1830 C-150 IRF1010 IRF530S IRGB30B60K IRGS30B60K IRGSL30B60K	PDF
Untitled Abstract: No abstract text available Text: PD - 97003 IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA	Original	IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF O-220AB IRGB30B60KPbF O-262 O-220AB AN-994.	PDF
AN-994 Abstract: C-150 IRGB30B60K IRGS30B60K IRGSL30B60K Text: PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	4799A IRGB30B60K IRGS30B60K IRGSL30B60K O-220AB O-262 O-220AB AN-994 C-150 IRGB30B60K IRGS30B60K IRGSL30B60K	PDF
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor	PDF
IRU1239SC Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK	Original	100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter	PDF