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    IRGSL30B60K Search Results

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    IRGSL30B60K Price and Stock

    Infineon Technologies AG AUIRGSL30B60K

    IGBT 600V 78A 370W TO262
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    DigiKey AUIRGSL30B60K Tube
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    Avnet Americas AUIRGSL30B60K Tube 4 Weeks 154
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    • 1000 $2.2168
    • 10000 $2.1027
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    Rochester Electronics AUIRGSL30B60K 1,150 1
    • 1 $2.38
    • 10 $2.38
    • 100 $2.23
    • 1000 $2.02
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    Infineon Technologies AG IRGSL30B60KPBF

    IGBT 600V 78A 370W TO262
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    DigiKey IRGSL30B60KPBF Tube
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    Avnet Americas IRGSL30B60KPBF Tube 4 Weeks 275
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    International Rectifier IRGSL30B60KPBF

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    Bristol Electronics IRGSL30B60KPBF 950
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    Quest Components IRGSL30B60KPBF 760
    • 1 $5.304
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    • 1000 $2.652
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    Rochester Electronics IRGSL30B60KPBF 2,382 1
    • 1 $1.33
    • 10 $1.33
    • 100 $1.25
    • 1000 $1.13
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    ComSIT USA IRGSL30B60KPBF 2,900
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    International Rectifier AUIRGSL30B60K

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    Bristol Electronics AUIRGSL30B60K 100
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    Rochester Electronics AUIRGSL30B60K 8,318 1
    • 1 $2.38
    • 10 $2.38
    • 100 $2.23
    • 1000 $2.02
    • 10000 $2.02
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    ComSIT USA AUIRGSL30B60K 50
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    IRGSL30B60K Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRGSL30B60K International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRGSL30B60K International Rectifier 600V UltraFast 10-30 kHz IGBT in a TO-262 package; A IRGSL30B60K with Standard Packaging Original PDF
    IRGSL30B60K International Rectifier Insulated Gate Bipolar Transistor Original PDF
    IRGSL30B60KPBF International Rectifier Original PDF
    IRGSL30B60KPBF International Rectifier 600V UltraFast 10-30 kHz IGBT in a TO-262 package; Similar to IRGSL30B60K with Lead Free Packaging Original PDF

    IRGSL30B60K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irf 1830

    Abstract: 1085 CT 600v 30a IGBT TRANSISTOR D 1785 irf 44 n AN-994 C-150 IRGB30B60K IRGS30B60K IRGSL30B60K
    Text: PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF 4799A IRGB30B60K IRGS30B60K IRGSL30B60K O-220AB O-262 AN-994. irf 1830 1085 CT 600v 30a IGBT TRANSISTOR D 1785 irf 44 n AN-994 C-150 IRGB30B60K IRGS30B60K IRGSL30B60K

    irgb30b60kpbf

    Abstract: C-150 IRGS30B60K IRGSL30B60K IRL3103L
    Text: PD - 95356 IRGB30B60KPbF IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.


    Original     		PDF IRGB30B60KPbF IRGS30B60K IRGSL30B60K O-220 O-220AB IRGB30B60KPbF O-262 O-220AB C-150 IRGS30B60K IRGSL30B60K IRL3103L

    Untitled

    Abstract: No abstract text available
    Text: PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF 4799A IRGB30B60K IRGS30B60K IRGSL30B60K O-220AB O-262 AN-994.

    Untitled

    Abstract: No abstract text available
    Text: PD - 97003 IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA


    Original     		PDF IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF O-220AB IRGB30B60KPbF O-262 AN-994. O-220AB

    AN-994

    Abstract: C-150 IRGSL30B60K
    Text: PD - 97003 IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA


    Original     		PDF IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF O-220AB IRGB30B60KPbF O-262 AN-994. O-220AB AN-994 C-150 IRGSL30B60K

    SL30B60K

    Abstract: C-150 IRF530S IRGS30B60K IRGSL30B60K IRL3103L wf-3
    Text: PD - 94741 IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 150°C.


    Original     		PDF IRGS30B60K IRGSL30B60K O-262 AN-994. SL30B60K C-150 IRF530S IRGS30B60K IRGSL30B60K IRL3103L wf-3

    irf 1830

    Abstract: C-150 IRF1010 IRF530S IRGB30B60K IRGS30B60K IRGSL30B60K
    Text: PD - 94799 IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF IRGB30B60K IRGS30B60K IRGSL30B60K O-220AB O-262 O-220AB AN-994. irf 1830 C-150 IRF1010 IRF530S IRGB30B60K IRGS30B60K IRGSL30B60K

    Untitled

    Abstract: No abstract text available
    Text: PD - 97003 IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA


    Original     		PDF IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF O-220AB IRGB30B60KPbF O-262 O-220AB AN-994.

    AN-994

    Abstract: C-150 IRGB30B60K IRGS30B60K IRGSL30B60K
    Text: PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF 4799A IRGB30B60K IRGS30B60K IRGSL30B60K O-220AB O-262 O-220AB AN-994 C-150 IRGB30B60K IRGS30B60K IRGSL30B60K

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter