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    SS1001 Price and Stock

    Essentra Components CBSS-10-01

    BRD SPT REST MNT SNAP LOCK 14MM
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    DigiKey CBSS-10-01 Bulk 492 1
    • 1 $0.68
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    Mouser Electronics CBSS-10-01 1,921
    • 1 $0.59
    • 10 $0.437
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    Bisco Industries CBSS-10-01 25
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    Samtec Inc PSS-10-01-T-S

    CONN SKT .200" PCB 10POS
    Free Sample
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    DigiKey PSS-10-01-T-S Tube 367 1
    • 1 $5.25
    • 10 $4.769
    • 100 $4.2016
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    Avnet Americas PSS-10-01-T-S Tube 2 Weeks, 5 Days 1
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    Mouser Electronics PSS-10-01-T-S 2
    • 1 $4.51
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    Bristol Electronics PSS-10-01-T-S 9
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    ETA-USA ESS100-15

    AC/DC CONVERTER 15V 105W
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    DigiKey ESS100-15 Bulk 9 1
    • 1 $325
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    ETA-USA ESS100-12

    AC/DC CONVERTER 12V 102W
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    DigiKey ESS100-12 Bulk 9 1
    • 1 $325
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    STI Vibration Monitoring CMCP300SS-10-01-00

    JUNCTION BOX S STL 10"L X 8"W
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    DigiKey CMCP300SS-10-01-00 Box 5 1
    • 1 $485
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    Find more SS1001 price and stock on Findchips.com

    SS1001 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MCH3307

    Abstract: MCH5836 SS10015M
    Text: MCH5836 Ordering number : ENA0780 SANYO Semiconductors DATA SHEET MCH5836 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-channel silicon MOSFET MCH3307 and a schottky barrier diode (SS10015M)


    Original     		PDF MCH5836 ENA0780 MCH3307) SS10015M) A0780-6/6 MCH3307 MCH5836 SS10015M

    SS1001

    Abstract: MCH5837 mosfet yb SS10015M TA72
    Text: MCH5837 Ordering number : ENA0781 SANYO Semiconductors DATA SHEET MCH5837 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel silicon MOSFET and a schottky barrier diode SS10015M


    Original     		PDF MCH5837 ENA0781 SS10015M) A0781-6/6 SS1001 MCH5837 mosfet yb SS10015M TA72

    Untitled

    Abstract: No abstract text available
    Text: CPH5848 Ordering number : EN8690 SANYO Semiconductors DATA SHEET CPH5848 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Applications • DC / DC converters. Features • Composite type with a P-Channel Sillicon MOSFET MCH3306 and a Schottky Barrier Diode (SS10015M)


    Original     		PDF EN8690 CPH5848 MCH3306) SS10015M)

    Untitled

    Abstract: No abstract text available
    Text: SS10015M Ordering number : ENN7979 Schottky Barrier Diode SS10015M 15V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • Low forward voltage (IF=0.3A, VF max=0.32V) (IF=0.5A, VF max=0.35V).


    Original     		PDF SS10015M ENN7979

    86886

    Abstract: diode sy 710 mch5846 CPH5846 MCH3309 SS10015M ss-1001
    Text: CPH5846 Ordering number : EN8688 SANYO Semiconductors DATA SHEET CPH5846 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features Composite type with a P-Channel Sillicon MOSFET MCH3309 and a Schottky Barrier Diode (SS10015M)


    Original     		PDF CPH5846 EN8688 MCH3309) SS10015M) 86886 diode sy 710 mch5846 CPH5846 MCH3309 SS10015M ss-1001

    SS10015M

    Abstract: 138SF 15VIO sanyo SS10015M
    Text: SS10015M 注文コード No. N 7 9 7 9 三洋半導体データシート N ショットキバリアダイオード SS10015M 15V1A 整流素子 用途 ・スイッチングレギュレータ , コンバータ , チョッパ等の高周波回路整流用。


    Original     		PDF SS10015M 15V1A 100mA, 600mm2 53104SB TA-101012 IT07150 IT07152 IT07153 SS10015M 138SF 15VIO sanyo SS10015M

    A0849

    Abstract: SS10015M VEC2820
    Text: VEC2820 注文コード No. N A 0 8 4 9 三洋半導体データシート N VEC2820 MOSFET : N チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・N チャネル MOS 型電界効果トランジスタとショットキバリアダイオード SS10015M を 1 パッケージに内蔵した複


    Original     		PDF VEC2820 SS10015M) 900mm2 60607PE TC-00000736 A0849-1/6 IT07152 IT07153 A0849 SS10015M VEC2820

    MCH5846

    Abstract: SS10015M CPH5846 MCH3309
    Text: CPH5846 注文コード No. N 8 6 8 8 三洋半導体データシート N CPH5846 MOSFET : P チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・P チャネル MOS 型電界効果トランジスタ MCH3309 とショットキバリアダイオード(SS10015M)を 1 パッケージに


    Original     		PDF CPH5846 MCH3309) SS10015M) 900mm2 N0106PE TC-00000270 IT07150 IT07152 MCH5846 SS10015M CPH5846 MCH3309

    D1004

    Abstract: MCH3405 MCH5811 SS10015M
    Text: MCH5811 Ordering number : ENN8059 MCH5811 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-channel sillicon MOSFET MCH3405 and a schottky barrier diode (SS10015M)


    Original     		PDF MCH5811 ENN8059 MCH3405) SS10015M) D1004 MCH3405 MCH5811 SS10015M

    SS1001

    Abstract: ENA0781A MCH5837 SS10015M
    Text: MCH5837 Ordering number : ENA0781A SANYO Semiconductors DATA SHEET MCH5837 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel silicon MOSFET and a schottky barrier diode SS10015M


    Original     		PDF MCH5837 ENA0781A SS10015M) A0781-6/6 SS1001 ENA0781A MCH5837 SS10015M

    SS1001

    Abstract: MCH3307 MCH5836 SS10015M
    Text: MCH5836 Ordering number : ENA0780A SANYO Semiconductors DATA SHEET MCH5836 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-channel silicon MOSFET MCH3307 and a schottky barrier diode (SS10015M)


    Original     		PDF MCH5836 ENA0780A MCH3307) SS10015M) PW10s, A0780-6/6 SS1001 MCH3307 MCH5836 SS10015M

    ss1001

    Abstract: MCH3445 MCH5812 SS10015M
    Text: MCH5812 Ordering number : ENN7998 MCH5812 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-channel sillicon MOSFET MCH3445 and a schottky barrier diode (SS10015M)


    Original     		PDF MCH5812 ENN7998 MCH3445) SS10015M) ss1001 MCH3445 MCH5812 SS10015M

    SS10015M

    Abstract: VEC2820
    Text: VEC2820 Ordering number : ENA0849 SANYO Semiconductors DATA SHEET VEC2820 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel sillicon MOSFET and a schottky barrier diode SS10015M contained in one


    Original     		PDF VEC2820 ENA0849 SS10015M) A0849-6/6 SS10015M VEC2820

    MCH3339

    Abstract: MCH5823 SS10015M
    Text: MCH5823 注文コード No. N 7 7 5 7 三洋半導体データシート N MCH5823 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・P チャネル MOS 形電界効果トランジスタ MCH3339 とショットキバリアダイオード(SS10015M)を 1 パッケージに


    Original     		PDF MCH5823 MCH3339) SS10015M) 900mm2 D2004PE TB-00001070 IT07151 MCH3339 MCH5823 SS10015M

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    on line ups circuit diagrams

    Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
    Text: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm


    Original     		PDF EP51E CPH6605 MCH6613 ECH8609 CPH3424 CPH3427 K3614 FW343 FW356 FW360 on line ups circuit diagrams 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04

    Mitsubishi th-n20kp

    Abstract: AD16-22DS Kyoritsu 3301 kyoritsu model 1008 terasaki xh100ns KSD 166 16a 250v ksd 302 250v, 10a carlo gavazzi VDE 0660 ksd 250v 10a EEL 22w transformer
    Text: CONTENT KIN AUTOMATI ON SDN. BHD. ANDELI Bus bar Support Power Supply MCB Bar Contactor / Thermal Overload Relay / Auxiliary Contact Terminal Block Din Rail Terminal Block C/W Cover Terminal Block Float Switch Foot Switch Warning Light / Tower Light Hour Run Meter / Time Switch / Weather Proof Isolating Switch


    Original     		PDF 100HP) 125HP) 112KW 150HP) 135KW 180HP) 150KW 200HP) 164KW 220HP) Mitsubishi th-n20kp AD16-22DS Kyoritsu 3301 kyoritsu model 1008 terasaki xh100ns KSD 166 16a 250v ksd 302 250v, 10a carlo gavazzi VDE 0660 ksd 250v 10a EEL 22w transformer

    A0780

    Abstract: MCH3307 MCH5836 SS10015M a07801
    Text: MCH5836 注文コード No. N A 0 7 8 0 A 三洋半導体データシート 半導体データシート No.NA0780 をさしかえてください。 MCH5836 MOSFET : P チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード


    Original     		PDF MCH5836 NA0780 MCH3307) SS10015M) 900mm2 41807PE TC-00000614 A0780-1/6 A0780 MCH3307 MCH5836 SS10015M a07801

    SBE001

    Abstract: SB20015M SS2003M SS3003CH ec2d02b SB007-W03C SB10015M SBS004M ss200 SS10015M
    Text: Schottky Barrier Diodes Shortform Table Surfacemount Type Package Series CONTENTS •Packages ■Quick selection guide ■Recommendation circuit diagram ■Lineup according to packages ・ECSP1006-2 ・ECSP1008-2 ・ECSP1608-4 ・SSFP ・SCH6 ・SMCP ・MCP


    Original     		PDF ECSP1006-2 ECSP1008-2 ECSP1608-4 SB30W03T SB40W03T SB10W05T SB25W05T SBE001 SB20015M SS2003M SS3003CH ec2d02b SB007-W03C SB10015M SBS004M ss200 SS10015M

    D1004

    Abstract: MCH3405 MCH5811 SS10015M 40V 60A MOSFET SS1001
    Text: MCH5811 注文コード No. N 8 0 5 9 三洋半導体データシート N MCH5811 MOSFET : N チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・N チャネル MOS 形電界効果トランジスタ（MCH3405 とショットキバリアダイオード


    Original     		PDF MCH5811 MCH3405) SS10015M 900mm2 D1004 TB-00000604 IT07150 IT07152 MCH3405 MCH5811 40V 60A MOSFET SS1001

    R6016

    Abstract: ss88 R2210 SS555 SS200-27 R14-12 j 6806 R1412 SS608 SS14-12
    Text: JR（車両）用圧着端子 •裸端子（ SS形） T F E L φd2 B φd1 JRS図番 ED564460 形 裸 端 子 ︵ S S 形 ︶ 68 JRS JST SS1.25-3 SS1.25-4 SS1.25-5 SS1.25-6 SS1.25-8 SS2-3 SS2-4 SS2-5 SS2-6 SS2-8 SS2-10 R1.25-3 R1.25-4 R1.25-5 1.25-6 1.25-8


    Original     		PDF JRSED564460 SS2-10 SS8-10 SS14-5 SS14-6 SS14-8 SS14-10 SS14-12 SS22-5 SS22-6 R6016 ss88 R2210 SS555 SS200-27 R14-12 j 6806 R1412 SS608

    PA0016

    Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
    Text: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30


    Original     		PDF 14-dagar PA0016 STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor

    yb 27 BR MOSFET

    Abstract: MCH5837 SS10015M SS1001 A0781
    Text: MCH5837 注文コード No. N A 0 7 8 1 A 三洋半導体データシート 半導体データシート No.NA0781 をさしかえてください。 MCH5837 MOSFET : N チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード


    Original     		PDF MCH5837 NA0781 SS10015M) 900mm2 41807PE TC-00000616 A0781-1/6 IT07150 yb 27 BR MOSFET MCH5837 SS10015M SS1001 A0781

    TT2140

    Abstract: transistor TT2140 TT2190 transistor horizontal TT2190 TT2170 TT2190 DATASHEET tt2140 equivalent tt2170 equivalent 2sd2689 inverter transistor TT2140
    Text: Ordering number: EP106A Discrete Devices for Video Equipment '04-08 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage


    Original     		PDF EP106A O-220FI5H TT2140 transistor TT2140 TT2190 transistor horizontal TT2190 TT2170 TT2190 DATASHEET tt2140 equivalent tt2170 equivalent 2sd2689 inverter transistor TT2140