philips
Abstract: marking G1
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Hermetically sealed glass package; ImplotecTM 1 technology; axial leaded; 2 leads SOD91 G1 (2) b D L G L DIMENSIONS (mm are the original dimensions) UNIT mm b max. 0.55 D max. 1.7 G max. G1 max. 3.0
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Untitled
Abstract: No abstract text available
Text: Package outline Hermetically sealed glass package; ImplotecTM 1 technology; axial leaded; 2 leads (2) SOD91 G1 b D L G L DIMENSIONS (mm are the original dimensions) UNIT b max. D max. G max. G1 max. L min. mm 0.55 1.7 3.0 3.5 29 1 2 mm scale Note 1. Implotec is a trademark of Philips.
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BYD71
Abstract: BYD71A BYD71B BYD71C BYD71D BYD71E BYD71F BYD71G G1996
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D122 BYD71 series Ultra fast low-loss controlled avalanche rectifiers Product specification Supersedes data of 1996 May 24 1996 Sep 19 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers
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M3D122
BYD71
BYD71A
BYD71B
BYD71C
BYD71D
BYD71E
BYD71F
BYD71G
G1996
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AgCu28
Abstract: No abstract text available
Text: CHAPTER 7 ENVIRONMENTAL INFORMATION page Introduction 7-2 Explanation of the tables 7-2 General safety remarks 7-5 Substances not used by Philips Semiconductors 7-6 Disposal and recycling 7-7 General warnings 7-7 Chemical content tables: Diodes Transistors
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SC-74
OT457
representiveSOT23
FeNi42
SnPb20
AgCu28
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C5V6 ph
Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
Text: MARKING CODES contents page Type number to marking code cross reference 2 Marking code to type number cross reference 21 Philips Semiconductors Small-signal and Medium-power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER
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1N821
1N4733A
1N821A
1N4734A
1N823
1N4735A
1N823A
C5V6 ph
C18 ph
PH C5V1
philips diode PH 33D
C8V2 PH
C10 PH
c4v7 ph
c5v1ph
c3v9ph
C33PH
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BYD11
Abstract: BYD11D BYD11G BYD11J BYD11K BYD11M SOD91
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D122 BYD11 series Controlled avalanche rectifiers Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 26 Philips Semiconductors Product specification Controlled avalanche rectifiers
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M3D122
BYD11
MAM196
BYD11D
BYD11G
BYD11J
BYD11K
BYD11M
SOD91
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BAS11
Abstract: S12 MARKING DIODE BAS12 bas12 philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D122 BAS11; BAS12 Controlled avalanche rectifiers Product specification Supersedes data of April 1996 1996 Sep 26 Philips Semiconductors Product specification Controlled avalanche rectifiers BAS11; BAS12
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M3D122
BAS11;
BAS12
MAM196
BAS11
S12 MARKING DIODE
BAS12
bas12 philips
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BYD11
Abstract: BYD11D BYD11G BYD11J BYD11K BYD11M
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D122 BYD11 series Controlled avalanche rectifiers Product specification Supersedes data of April 1996 1996 Sep 26 Philips Semiconductors Product specification Controlled avalanche rectifiers BYD11 series
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M3D122
BYD11
MAM196
BYD11D
BYD11G
BYD11J
BYD11K
BYD11M
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transistor SMD s72
Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
Text: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той
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OT323
BC818W
MUN5131T1.
BC846A
SMBT3904,
MVN5131T1
SMBT3904
OT323
transistor SMD s72
nec mys 501
MYS 99
transistor 8BB smd
st MYS 99 102
kvp 81A
kvp 81A DIODE
Kvp 69A
kvp 86a
smd transistor A7p
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SOD87 marking code 7
Abstract: SOD88A SC59 SO20 23 sot23 PHILIPS marking lp "sot23 mark" MARKING band MSA219 marking Code philips
Text: PACKAGE OUTLINES Package SC59 SOT346 SC70-3 (SOT323) SO20 (SOT163-1) SOD27 (DO-35) SOD57 SOD61A SOD61AB SOD61AC SOD61AD SOD61AE SOD61AF SOD61AG SOD61AH SOD61AI SOD61AJ SOD61AK SOD61H2 SOD64 SOD66 (DO-41) SOD68 (DO-34) SOD80 SOD80C SOD81 SOD83A SOD87 SOD88A
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OT346)
SC70-3
OT323)
OT163-1)
DO-35)
OD61A
OD61AB
OD61AC
OD61AD
OD61AE
SOD87 marking code 7
SOD88A
SC59
SO20
23 sot23
PHILIPS marking
lp "sot23 mark"
MARKING band
MSA219
marking Code philips
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Controlled avalanche rectifiers BASH; BAS12 FEATURES DESCRIPTION • Glass passivated Rectifier diodes in cavity free cylindrical SOD91 glass packages, incorporating lmplotec 1 technology. • High maximum operating
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BAS12
MAM196
BAS11
134AS11;
BAS11;
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BYD71
Abstract: BYD71A BYD71B BYD71C BYD71D BYD71E BYD71F BYD71G
Text: Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYD71 series FEATURES DESCRIPTION • Glass passivated Cavity free cylindrical SOD91 glass package through lmplotec <1 technology. This package is • High maximum operating
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BYD71
711Q62b
BYD71A
BYD71B
BYD71C
BYD71D
BYD71E
BYD71F
BYD71G
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BAS11
Abstract: S12 MARKING CODE DIODE S12 MARKING DIODE BAS12
Text: Philips Semiconductors Product specification Controlled avalanche rectifiers BAS11; BAS12 FEATURES DESCRIPTION • Glass passivated Rectifier diodes in cavity free cylindrical SOD91 glass packages, incorporating lmplotec 1> technology. • High maximum operating
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BAS11;
BAS12
BAS11
BAS12:
7110fl2b
BAS11
S12 MARKING CODE DIODE
S12 MARKING DIODE
BAS12
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BYD77B
Abstract: byv28 PHILIPS BYV27 SOD87 BYD73B BYD73D BYD73F BYD73G sod81
Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Medium-power rectifiers ULTRA-FAST LOW-LOSS CONTROLLED-AVALANCHE RECTIFIERS OVERVIEW leaded SOD64 3.5 A SOD91 0.55 A surface-mount SOD87 SOD106 1.9 A
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BYD73A
BYD73B
BYD73C
BYD73D
BYD73E
BYD73F
BYD73G
BYV27-50
BYV27-100
BYV27-150
BYD77B
byv28
PHILIPS BYV27
SOD87
BYD73G
sod81
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b'lE » bbSETEl 00Eb5b5 TEb • APX _ Prelim inary specification Philips Sem iconductors_ Avalanche fast soft-recovery rectifier diodes DESCRIPTION Glass passivated rectifier diodes in hermetically sealed SOD91
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00Eb5b5
BYD31
BYD31D
BYD31G
BYD31J
BYD31K
002bS71
002b572
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BYD71
Abstract: BYD71A BYD71B BYD71C BYD71D BYD71E BYD71F BYD71G
Text: Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYD71 series FEATURES DESCRIPTION • Glass passivated Cavity free cylindrical SOD91 glass package through lmplotec <1 technology. This package is • High maximum operating
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BYD71
BYD71A
BYD71B
BYD71C
BYD71D
BYD71E
BYD71F
BYD71G
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BYD31
Abstract: BYD31D BYD31G BYD31J BYD31K BYD31M
Text: N AUER PHILIPS/DISCRETE b^E D • bhSBTBl DOEbSbS TSb ■ APX Philips Sem iconductors Prelim inary specification Avalanche fast soft-recovery rectifier diodes DESCRIPTION Glass passivated rectifier diodes in hermetically sealed SOD91 implosion diode ID glass
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02b5bÃ
BYD31
BYD31D
BYD31G
BYD31J
BYD31K
BYD31M
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Untitled
Abstract: No abstract text available
Text: N AHER PHILIPS/DISCRETE bTE I> • bb53T31 D02bb00 flSO « A P X Philips specification BYD71 series Epitaxial avalanche diodes DESCRIPTION Rectifier diodes in hermetically sealed axial-leaded ID implosion
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bb53T31
D02bb00
BYD71
BYD71B
BYD71C
BYD71D
BYD71E
BYD71F
BYD71G
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Untitled
Abstract: No abstract text available
Text: bTE D • bbS3T31 OOEblfifl ATT ■ APX Philips Product specification Silicon glass passivated avalanche diodes BAS11/BAS12 N AMER PHILIPS/DISCRETE DESCRIPTION Glass passivated rectifier diodes in
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bbS3T31
BAS11/BAS12
BAS12
11/BAS
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BAS11
Abstract: BAS12 marking 5b philips ScansUX40
Text: SbE ]> • 7 1 1 0 6 2 b 0 Q M 0 1 4 1 *ilb ■ P H I N _ . Philips Semiconductors Product specification T - G 7— is Silicon glass passivated avalanche diodes BAS11/BAS12 P HILIPS I N T E R N A T I O N A L DESCRIPTION SbE D QUICK REFERENCE DATA Glass passivated rectifier diodes in
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711062b
0QM0141
BAS11/BAS12
BAS11
BAS12
711002b
0D4D147
11/BAS
marking 5b philips
ScansUX40
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Untitled
Abstract: No abstract text available
Text: D IS C R E T E S E M IC O N D U C T O R S File under Discrete Semiconductors, SC01 Philips Semiconductors P H IL IP S PHILIPS Philips Semiconductors Product specification Controlled avalanche rectifiers BAS11; BAS12 FEATURES DESCRIPTION • Glass passivated
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BAS11;
BAS12
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BYD11
Abstract: BYD11D sod91 Philips 037 philips 037 01 ScansUX40
Text: 5bE D vnoaati GD40S37 o n m p h in BYD11 SERIES PHILIPS INTERNATIONAL SbE » CONTROLLED AVALANCHE RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded SOD-91 ID * envelope, intended for general purpose rectifier applications.
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711002h
GD40S37
BYD11
OD-91
BYD11D
7110flÂ
7Z242S2.
sod91
Philips 037
philips 037 01
ScansUX40
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BYD11
Abstract: BYD11D BYD11G BYD11J BYD11K BYD11M
Text: Philips Semiconductors Product specification Controlled avalanche rectifiers BYD11 series FEATURES • Glass passivated • High maximum operating temperature • Low leakage current L. IC • Excellent stability • Guaranteed avalanche energy absorption capability
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BYD11
BYD11D
BYD11G
711Dfl2b
BYD11J
BYD11K
BYD11M
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BYD71A
Abstract: BYD71 BYD71B BYD71C BYD71D BYD71E BYD71F BYD71G
Text: ODEbLiDD Ö5D • APX b'lE T> N AUER PHILIPS/DISCRETE Product spécification Philips semiconductors BYD71 series Epitaxial avalanche diodes DESCRIPTION Rectifier diodes in hermetically sealed axial-leaded ID implosion diode envelopes. They feature low forward voltage drop, very fast
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BYD71
BYD71A
BVD71B
BYD71C
G05bbCH
MSC053
BYD71B
BYD71C
BYD71D
BYD71E
BYD71F
BYD71G
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