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    SIR826ADP Search Results

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    SIR826ADP Price and Stock

    Vishay Siliconix SIR826ADP-T1-GE3

    MOSFET N-CH 80V 60A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIR826ADP-T1-GE3 Cut Tape 1,900 1
    • 1 $2.69
    • 10 $1.843
    • 100 $2.69
    • 1000 $1.02756
    • 10000 $1.02756
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    SIR826ADP-T1-GE3 Digi-Reel 1
    • 1 $2.69
    • 10 $1.843
    • 100 $2.69
    • 1000 $1.02756
    • 10000 $1.02756
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    SIR826ADP-T1-GE3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.025
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    Vishay Intertechnologies SIR826ADP-T1-GE3

    N-CHANNEL 80-V (D-S) MOSFET - Tape and Reel (Alt: SIR826ADP-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIR826ADP-T1-GE3 Reel 26 Weeks 3,000
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    • 10000 $1.00655
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    Mouser Electronics SIR826ADP-T1-GE3
    • 1 $2.45
    • 10 $2.44
    • 100 $2.44
    • 1000 $2.44
    • 10000 $1.37
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    Newark SIR826ADP-T1-GE3 Reel 3,000
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    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.05
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    SIR826ADP-T1-GE3 Cut Tape 1
    • 1 $2.45
    • 10 $2.44
    • 100 $2.44
    • 1000 $2.44
    • 10000 $2.44
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    Bristol Electronics SIR826ADP-T1-GE3 699
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    TTI SIR826ADP-T1-GE3 Reel 6,000 3,000
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    • 1000 -
    • 10000 $1.37
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    Avnet Asia SIR826ADP-T1-GE3 28 Weeks 1
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    • 10000 $1.20603
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    EBV Elektronik SIR826ADP-T1-GE3 27 Weeks 3,000
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    Vishay Huntington SIR826ADP-T1-GE3

    MOSFET N-CH 80V 60A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SIR826ADP-T1-GE3 12,000
    • 1 -
    • 10 $5.417
    • 100 $3.612
    • 1000 $3.612
    • 10000 $3.612
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    SIR826ADP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIR826ADP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V 60A 8SOIC Original PDF

    SIR826ADP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR826ADP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A)a 0.0055 at VGS = 10 V 60 80 0.0059 at VGS = 7.5 V 60 0.0087 at VGS = 4.5 V 60 Qg (Typ.) 25 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm


    Original     		PDF SiR826ADP SiR826ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiR826ADP www.vishay.com Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) (Ω) Max. ID (A) a 0.0055 at VGS = 10 V 60 0.0059 at VGS = 7.5 V 60 0.0087 at VGS = 4.5 V 60 Qg (Typ.) D 5 D 6 • 100 % Rg and UIS tested • Material categorization:


    Original     		PDF SiR826ADP SiR826ADelectronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Specification Comparison www.vishay.com Vishay Siliconix SiR826ADP vs. SiR826DP Description: N-Channel, 80 V D-S MOSFET Package: PowerPAK SO-8 Pin Out: Identical Part Number Replacements: SiR826ADP-T1-GE3 replaces SiR826DP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF SiR826ADP SiR826DP SiR826ADP-T1-GE3 SiR826DP-T1-GE3 22-Aug-13

    Untitled

    Abstract: No abstract text available
    Text: SiR826ADP www.vishay.com Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) (Ω) Max. ID (A) a 0.0055 at VGS = 10 V 60 0.0059 at VGS = 7.5 V 60 0.0087 at VGS = 4.5 V 60 Qg (Typ.) D 5 D 6 • 100 % Rg and UIS tested • Material categorization:


    Original     		PDF SiR826ADP SiR826ADelectronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR826ADP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A)a 0.0055 at VGS = 10 V 60 80 0.0059 at VGS = 7.5 V 60 0.0087 at VGS = 4.5 V 60 Qg (Typ.) 25 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm


    Original     		PDF SiR826ADP SiR826ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR826ADP www.vishay.com Vishay Siliconix N-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR826ADP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IDTP9036A

    Abstract: OM350
    Text: 12V Wireless Power Transmitter IC for TX-A6 Product Datasheet IDTP9036A Features Description 5W Solution for Wireless Power Consortium WPC -Compliant Power Transmitter Design TX-A6 Conforms to WPC Specification Version 1.1 Specifications Reduced EMI To Meet Requirements of WPC


    Original     		PDF IDTP9036A IDTP9036A OM350

    so8 footprint

    Abstract: SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs KEY BENEFITS • New next-generation technology provides very low on-resistance and ultra-low figure of merit


    Original     		PDF SC-70 SC-75 Si7252DP VMN-PT0261-1209 so8 footprint SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419

    Untitled

    Abstract: No abstract text available
    Text: Exclusive Technology Feature ISSUE: October 2014 How2 Turn On A MOSFET by Sanjay Havanur, Vishay Siliconix, Santa Clara, Calif. On a portal dedicated to power electronics professionals the topic of turning on a MOSFET might sound trivial, like asking how to boil water on a cooking show. After all, it shouldn't be a major issue. Unlike bipolar devices,


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs Key Benefits • New next-generation technology provides very low on-resistance and ultra-low figure of merit


    Original     		PDF SC-75 SiB456DK Si7252DP SiS990DN Si4590DY 1212-8S VMN-PT0261-1402

    N-Channel MOSFETs

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in


    Original     		PDF SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs