202E
Abstract: 6A05G 6A10G 6A8G
Text: CHONGQING PINGYANG ELECTRONICS CO.,LTD. 6A05G THRU 6A10G TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER VOLTAGE:50-1000V CURRENT:6.0A FEATURES R-6 •Low cost ·Low leakage ·Low forward voltage drop ·High current capability ·High surge current capability
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6A05G
6A10G
VOLTAGE50-1000V
UL94V-0
202E
6A10G
6A8G
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PDF
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202E
Abstract: 6A05M 6A10M
Text: CHONGQING PINGYANG ELECTRONICS CO.,LTD. 6A05M THRU 6A10M TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER VOLTAGE:50-1000V CURRENT:6.0A FEATURES R-6 •Low cost ·Low leakage ·Low forward voltage drop ·High current capability ·High surge current capability
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6A05M
6A10M
VOLTAGE50-1000V
UL94V-0
202E
6A10M
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PDF
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KBJ6A
Abstract: 983 6k DIODE 6K tc 122 25 6d DIODE 6j
Text: SIYU R KBJ6A . KBJ6M Single-phase Silicon Bridge Rectifier 塑封硅整流桥堆 反向电压 200-1000V 正向电流 6 A Reverse Voltage 200 to 1000V Forward Current 6 A KBJ 特征 Features .157 4.0 - .083(2.1) .069(1.7) .043(1.1) .035(0.9) .303(7.7)
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00---1000V
KBJ6A
983 6k
DIODE 6K
tc 122 25 6d
DIODE 6j
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PDF
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diode P600B
Abstract: P600B P600A P600D P600G P600J P600K P600M p600b diode 202E
Text: CHONGQING PINGYANG ELECTRONICS CO.,LTD. 6A05/P600A THRU 6A10/P600M TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER VOLTAGE:50-1000V CURRENT:6.0A FEATURES R-6 •Low cost ·Low leakage ·Low forward voltage drop ·High current capability ·High surge current capability
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6A05/P600A
6A10/P600M
VOLTAGE50-1000V
UL94V-0
diode P600B
P600B
P600A
P600D
P600G
P600J
P600K
P600M
p600b diode
202E
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PDF
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GBU6A
Abstract: No abstract text available
Text: SIYU R GBU6A . GBU6M Single-phase Silicon Bridge Rectifier 塑封硅整流桥堆 反向电压 50-1000V 正向电流 6 A Reverse Voltage 50 to 1000V Forward Current 6 A 特征 Features GBU Low reverse leakage •反向漏电流低 High forward surge capability
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0---1000V
GBU6A
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PDF
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Untitled
Abstract: No abstract text available
Text: KBU6AG THRU KBU6MG SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 6.0A FEATURE KBU Ideal for printed circuit board Surge overload rating:150 A peak High case dielectric strength MECHANICAL DATA Terminal: Plated leads solderable per
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UL-94
1-Apr-04
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PDF
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KBU 6A rectifier
Abstract: KBU BRIDGE RECTIFIER KBU 6d rectifier bridge diode kbu 6m diode 6A 1000v 202E Shanghai Sunrise Electronics
Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. KBU6A THRU KBU6M SINGLE PHASE SILICON BRIDGE RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 50 TO 1000V CURRENT: 6.0A FEATURES KBU • Ideal for printed circuit board • Surge overload rating: 250 A peak • High case dielectric strength
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250oC/10sec/0
UL-94
100oC
KBU 6A rectifier
KBU BRIDGE RECTIFIER
KBU 6d rectifier
bridge diode kbu 6m
diode 6A 1000v
202E
Shanghai Sunrise Electronics
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PDF
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Untitled
Abstract: No abstract text available
Text: KBU6A THRU KBU6M SINGLE PHASE SILICON BRIDGE RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 6.0A FEATURE KBU Ideal for printed circuit board Surge overload rating: 250 A peak High case dielectric strength MECHANICAL DATA Terminal: Plated leads solderable per MIL-STD 202E, method 208C
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UL-94
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PDF
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KBU 6A rectifier
Abstract: KBU 6d rectifier KBU BRIDGE RECTIFIER rectifier bridge kbu KBU 6b rectifier
Text: KBU6A THRU KBU6M SINGLE PHASE SILICON BRIDGE RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 6.0A FEATURE KBU Ideal for printed circuit board Surge overload rating:250 A peak High case dielectric strength MECHANICAL DATA Terminal: Plated leads solderable per MIL-STD 202E, method 208C
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UL-94
1-Mar-04
KBU 6A rectifier
KBU 6d rectifier
KBU BRIDGE RECTIFIER
rectifier bridge kbu
KBU 6b rectifier
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PDF
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KBU 6A rectifier
Abstract: No abstract text available
Text: KBU6A THRU KBU6M SINGLE PHASE SILICON BRIDGE RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 6.0A FEATURE KBU Ideal for printed circuit board Surge overload rating:250 A peak High case dielectric strength MECHANICAL DATA Terminal: Plated leads solderable per MIL-STD 202E, method 208C
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UL-94
KBU 6A rectifier
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PDF
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2CL25
Abstract: 2CL77 2CL91 2CL24 2CL70 1A7 Zener SMD LL4001 BA151 HVP320 2CL75
Text: Diodes Fast Switching Rectifiers LL4148 Vrm=100V;Ifsm=500mA 1N4148B/P T/R (T/B) Vr=100V;Ifm=0.5A MinIMELF(SOD 80) DO 41 General Purpose Rectifiers LL4001 4007 NEW Vrm=50 1000V; Ifsm=1.0A MELF 1N4001 4007(B/P)(T/R)(T/B) Vr=50 1000V; Ifm=1.0A DO 41 1A7 Vr=1200V; Ifm=1.0A
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LL4148
500mA
1N4148B/P
LL4001
1N4001
EM516
1N5391
1N5399
1N5400
1000Ifm
2CL25
2CL77
2CL91
2CL24
2CL70
1A7 Zener
SMD LL4001
BA151
HVP320
2CL75
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin U2790 09/05 KBPC6PbF SERIES KBPC8PbF SERIES 6A, 8A Single Phase Rectifier Bridge • Suitable for printed circuit board or chasis mounting • Compact construction • High surge current capability • Fully characterised data • Wide temperature range
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U2790
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KBPC8005
Abstract: KBPC801 KBPC802 KBPC804 KBPC806 KBPC808 KBPC810 general purpose bridge rectifier by using diode
Text: Bulletin U2790 09/05 KBPC6PbF SERIES KBPC8PbF SERIES 6A, 8A Single Phase Rectifier Bridge • Suitable for printed circuit board or chasis mounting • Compact construction • High surge current capability • Fully characterised data • Wide temperature range
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U2790
12-Mar-07
KBPC8005
KBPC801
KBPC802
KBPC804
KBPC806
KBPC808
KBPC810
general purpose bridge rectifier by using diode
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin U2790 09/05 KBPC6PbF SERIES KBPC8PbF SERIES 6A, 8A Single Phase Rectifier Bridge • Suitable for printed circuit board or chasis mounting • Compact construction • High surge current capability • Fully characterised data • Wide temperature range
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U2790
08-Mar-07
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PDF
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NTE5301
Abstract: NTE5300 NTE5303 NTE5302
Text: NTE5300 thru NTE5303 Silicon Bridge Rectifier, 8A Features: D Low Forward Voltage Drop D High Current Capability D High Reliability D High Surge Current Capability D Ideal for Printed Circuit Boards Maximum Ratings and Electrical Characteristics: TA = +25C unless otherwise specified.
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NTE5300
NTE5303
NTE5300
NTE5301
NTE5302
18K/W
12mm2
NTE5301
NTE5303
NTE5302
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PDF
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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PDF
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NTE5814
Abstract: NTE5812 NTE5815 NTE5817
Text: NTE5812 thru NTE5817 6 Amp Plastic Silicon Rectifier Features: D Diffused Junction D High Surge Capability D Completely Insulated Case D Uniform Molded Body 1.000 25.4 Min .050 (1.27) Dia .350 (8.89) .350 (8.89) Dia Maximum Ratings and Electrical Characteristics: (TA = +25°C unless otherwise specified. Single
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NTE5812
NTE5817
NTE5812
NTE5814
NTE5814
NTE5815
NTE5817
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PDF
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NTE572
Abstract: No abstract text available
Text: NTE572 Silicon Rectifier General Purpose, Fast Recovery Features: D Fast Switching D Low Leakage D Low Forward Voltage Drop D High Current Capability D High Current Surge D High Reliability Maximum Ratings and Electrical Characteristics: TA = +25°C unless otherwise specified. Single
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NTE572
500ns
100pF
500mA,
250mA.
NTE572
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PDF
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triac mw 131 600d
Abstract: 65n06
Text: / 20 13 -2 01 4 Nell,your reliable green partner Europe North America China Taiwan ,Taipei Africa South America Oceania Evolving green Innovation and Future Worldwide Presence Headquarter TEL FAX E-Mail Nell semiconductor Taiwan,Taipei +886-2-26474181 +886-2-26429717
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rs606m
Abstract: rs603m
Text: MCC TM Micro Commercial Components THRU RS607M 6 Amp Single Phase Silicon Bridge Rectifier 50 to 1000 Volts Features • • • • • • x RS601M omponents 20736 Marilla Street Chatsworth !"# $ % !"#
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RS601M
RS607M
E165989
RS602M
RS603M
RS604M
RS605M
RS606M
RS607M
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PDF
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components Features • • • • • x RS601M omponents 20736 Marilla Street Chatsworth !"# $ % !"# Low Leakage and Low Forward Voltage Lead Free Finish/RoHS Compliant NOTE 1 ("P" Suffix
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RS601M
RS607M
E165989
RS602M
RS603M
RS604M
RS605M
RS606M
RS607M
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PDF
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NTE5869
Abstract: NTE5850 transistor c 5855
Text: NTE5850 thru NTE5869 Silicon Power Rectifier Diode, 6 Amp, DO4 Description and Features: The NTE5850 through NTE5869 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls.
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NTE5850
NTE5869
NTE5869
transistor c 5855
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NTE5850
Abstract: NTE5869
Text: NTE5850 thru NTE5869 Silicon Power Rectifier Diode, 6 Amp Description and Features: The NTE5850 through NTE5869 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls.
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NTE5850
NTE5869
NTE5869
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PDF
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edi minibridge pb20
Abstract: Rectifier edi minibridge edi minibridge PB edi pb20 6ca4 5r4wga MPI 140 120 bridge rectifier
Text: electronic devices, inc. Short Form Catalog 90 silicon bridge rectifiers low & hv diodes stock & custom hv assemblies ELECTRONIC DEVICES, INC. • 21 GRAY OAKS AVE., YONKERS, NY 10710 • 914-965-4400 • 800-678-0828 • FAX 914-965-5531 • TELEX 681-8047
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OCR Scan
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PDF
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