Untitled
Abstract: No abstract text available
Text: PHOTODIODE 12mm2 ODD-12WB FEATURES • TO-8 hermetic package • Circular active area • Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C Rise Time
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12mm2
ODD-12WB
450nm
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE: 12mm2 ODD-12W FEATURES • TO-8 hermetic package • Circular active area • Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C Rise Time
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12mm2
ODD-12W
632nm
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ODD-12WB
Abstract: No abstract text available
Text: PHOTODIODE: 12mm2 ODD-12WB FEATURES • TO-8 hermetic package • Circular active area • Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C Rise Time
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12mm2
ODD-12WB
632nm
91site:
ODD-12WB
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ODD-12W
Abstract: 12W 60
Text: PHOTODIODE: 12mm2 ODD-12W FEATURES • TO-8 hermetic package • Circular active area • Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C Rise Time
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12mm2
ODD-12W
632nm
ODD-12W
12W 60
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE 12mm2 ODD-12W FEATURES • TO-8 hermetic package • Circular active area • Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C
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12mm2
ODD-12W
632nm
Newbur013
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE: 12mm2 ODD-12W FEATURES • TO-8 hermetic package • Circular active area • Low capacitance ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C
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12mm2
ODD-12W
632nm
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE: 12mm2 ODD-12W FEATURES • TO-8 hermetic package • Circular active area • Low capacitance ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C
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12mm2
ODD-12W
632nm
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ODD-12WB
Abstract: No abstract text available
Text: PHOTODIODE: 12mm2 ODD-12WB FEATURES • TO-8 hermetic package • Circular active area • Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C Rise Time
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Original
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PDF
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12mm2
ODD-12WB
450nm
91site:
ODD-12WB
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE 12mm2 ODD-12W FEATURES • TO-8 hermetic package • Circular active area • Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C Rise Time
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12mm2
ODD-12W
632nm
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ODD-12W
Abstract: No abstract text available
Text: PHOTODIODE: 12mm2 ODD-12W FEATURES • TO-8 hermetic package • Circular active area • Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C Rise Time
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12mm2
ODD-12W
632nm
913om,
ODD-12W
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE 12mm2 ODD-12WB FEATURES • TO-8 hermetic package • Circular active area • Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C
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Original
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12mm2
ODD-12WB
450nm
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ODD-12WB
Abstract: No abstract text available
Text: PHOTODIODE: 12mm2 ODD-12WB FEATURES • TO-8 hermetic package • Circular active area • Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C Rise Time
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12mm2
ODD-12WB
632nm
ODD-12WB
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cell balancing
Abstract: LTC3625-1 LTC3625 balancing circuit for supercapacitor supercapacitor supercap charge
Text: News Release ⎜ www.linear.com Programmable 1A Buck-Boost 2-Cell Supercap Chargers with Automatic Cell Balancing in Compact 12mm2 Package MILPITAS, CA – August 10, 2010 – Linear Technology Corporation introduces the LTC3625 and LTC3625-1, the latest in a family of 2-cell supercapacitor chargers for addressing high peak
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12mm2
LTC3625
LTC3625-1,
LTC3625/LTC3625-1
cell balancing
LTC3625-1
LTC3625
balancing circuit for supercapacitor
supercapacitor
supercap charge
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LTC4160-1
Abstract: No abstract text available
Text: News Release ⎜ www.linear.com Switching Power Manager with USB On-The-Go & Overvoltage Protection in a Compact 12mm2 Footprint MILPITAS, CA – May 6, 2009 – Linear Technology Corporation announces the LTC4160 and LTC4160-1, the latest members in a family of power manager ICs for single-cell Li-Ion/Polymer
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12mm2
LTC4160
LTC4160-1,
LTC4160/-1
500mA
LTC4160-1
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nir emitter leds with 700 to 900 nm
Abstract: ODD-660W ansi z136.1 -vcsel photodiode 650nm nep UV led diode 200 nm peak 1W OD-850-30-030 OD-800W ODD-42WB "infrared led" 800 nm 980 nm led nir
Text: Optoelectronics Data Book Innovators in Optoelectronics TABLE OF CONTENTS Alphanumeric Eye Safety
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660nm
ODD-660W
nir emitter leds with 700 to 900 nm
ODD-660W
ansi z136.1 -vcsel
photodiode 650nm nep
UV led diode 200 nm peak 1W
OD-850-30-030
OD-800W
ODD-42WB
"infrared led" 800 nm 980 nm
led nir
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GBJ2005
Abstract: GBJ210 GB210 GBJ206
Text: GBJ2005 THRU GB210 GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Ampere FEATURES GBJ2 Glass passivated chip junction ● Reliable low cost construction utilizing molded plastic technique ● Ideal for printed circuit board
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GBJ2005
GB210
MIL-STD-202
300us
GBJ210
GB210
GBJ206
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components Features • • • • • • RMB2S THRU RMB6S omponents 20736 Marilla Street Chatsworth !"# $ % !"# Surface Mount Package Glass Passivated Diode Construction
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Untitled
Abstract: No abstract text available
Text: KBP200 – KBP2010 W TE PO WE R SEM IC O ND UC TO R S 2.0A BRIDGE RECTIFIER Features ! Diffused Junction ! ! ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Ideal for Printed Circuit Boards UL Recognized File # E157705
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KBP200
KBP2010
E157705
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components Features • • • • Glass Passivated Die Construction High Surge Current Capabilit Case Material: Molded Plastic. Classification Rating 94V-0 Marking : type number 1.5 Amp Glass Passivated Bridge Rectifier 50 to 1000 Volts
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KBP005M
KBP10M
KBP01M
KBP02M
KBP04M
KBP06M
KBP08M
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Untitled
Abstract: No abstract text available
Text: LM2757 Switched Capacitor Boost Regulator with High Impedance Output in Shutdown General Description Features The LM2757 is a constant frequency pre-regulated switchedcapacitor charge pump that operates at 1.25 MHz to produce a low-noise regulated output voltage. The device can be configured to provide up to 100 mA at 4.1V, 110 mA at 4.5V, or
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LM2757
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KBP005M
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components Features x x Glass Passivated Die Construction High Surge Current Capabilit x Case Material: Molded Plastic. Classification Rating 94V-0 Marking : type number UL Recognized File # E165989 x • KBP005M THRU KBP10M
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KBP005M
KBP10M
E165989
-55qC
150qC
150qC
KBP01M
KBP02M
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STPR320
Abstract: No abstract text available
Text: STPR320 ULTRA-FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 3A VRRM 200 V Tj (max) 150°C VF (max) 0.99 V trr (max) 30 ns FEATURES • ■ ■ ■ SUITED FOR SMPS LOW LOSSES LOW FORWARD AND REVERSE RECOVERY TIME HIGH SURGE CURRENT CAPABILITY
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STPR320
DO-15
DO-15,
STPR320
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Untitled
Abstract: No abstract text available
Text: GBU6A – GBU6K WTE POWER SEMICONDUCTORS 6.0A GLASS PASSIVATED BRIDGE RECTIFIER Features ! Glass Passivated Die Construction A ! ! ! ! Low Forward Voltage Drop D High Current Capability J High Reliability C High Surge Current Capability ! + ~ ~ Ideal for Printed Circuit Boards
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E157705
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XD 102 94V-0
Abstract: TDK Ferrite Core PC40 EE-25 200 6 transformer HT EE 19 transformer TDK H5C2 material TDK, TRANSFORMER, EPC19, pc40 core EE 25 transformer TDK Ferrite Core PC40 ei EE - 16 TRANSFORMER FEPC-17-A
Text: Ferrite Cores For Transformers/Inductors EE, ER, EPC, EEM and T4 Series T h ese are the series of low profile miniature surface mount type ferrite core for transform ers and inductors which improves the efficiency of high density mounting. M aterials em ployed include
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usPC40EEM12
PC50EEM12
100kHz,
200mT]
500kHz,
100kHz
500kHz
24Vdc
XD 102 94V-0
TDK Ferrite Core PC40
EE-25 200 6 transformer
HT EE 19 transformer
TDK H5C2 material
TDK, TRANSFORMER, EPC19, pc40
core EE 25 transformer
TDK Ferrite Core PC40 ei
EE - 16 TRANSFORMER
FEPC-17-A
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