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    SILICON PLANAR EPITAXIAL TRANSISTORS Search Results

    SILICON PLANAR EPITAXIAL TRANSISTORS Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    SILICON PLANAR EPITAXIAL TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n3866

    Abstract: 2n4427 2N3866 application note 2N3866 class-a 2n3866 philips RF 2N3866 2N3866 metal data 2n3866 2N3866 application Transistor 2n4427
    Text: DISCRETE SEMICONDUCTORS DATA SHEET 2N3866; 2N4427 Silicon planar epitaxial overlay transistors Product specification Supersedes data of August 1986 File under Discrete Semiconductors, SC08a 1995 Oct 27 Philips Semiconductors Product specification Silicon planar epitaxial


    Original     		PDF 2N3866; 2N4427 SC08a O-39/1 2n3866 2n4427 2N3866 application note 2N3866 class-a 2n3866 philips RF 2N3866 2N3866 metal data 2n3866 2N3866 application Transistor 2n4427

    2N4400 2N4401

    Abstract: 2n4401 2N4400 2N4402 2N4403
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-92 Plastic Package 2N4400, 2N4401 2N4402, 2N4403 2N4400, 4401 NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N4402, 4403 PNP SILICON PLANAR EPITAXIAL TRANSISTORS General Purpose Switching Applications


    Original     		PDF ISO/TS16949 2N4400, 2N4401 2N4402, 2N4403 2N4400/01 2N4402/03 C-120 2N4400 2N4401 2n4401 2N4400 2N4402 2N4403

    2SB0709A

    Abstract: 2SD0601A XN01601G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01601G Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) For general amplification • Package • Two elements incorporated into one package


    Original     		PDF 2002/95/EC) XN01601G 2SB0709A 2SD0601A 2SB0709A 2SD0601A XN01601G

    CTN639

    Abstract: CTN640 transistor C 639 W CTN635 CTN636 CTN637 CTN638
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-237 Plastic Package CTN635, CTN637, CTN639 CTN636, CTN638, CTN640 CTN635, 637, 639 NPN SILICON PLANAR EPITAXIAL TRANSISTORS CTN636, 638, 640 PNP SILICON PLANAR EPITAXIAL TRANSISTORS


    Original     		PDF ISO/TS16949 O-237 CTN635, CTN637, CTN639 CTN636, CTN638, CTN640 CTN639 CTN640 transistor C 639 W CTN635 CTN636 CTN637 CTN638

    2SB0709A

    Abstract: 2SD0601A XN0B301G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0B301G Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) For general amplification • Package • Two elements incorporated into one package


    Original     		PDF 2002/95/EC) XN0B301G 2SB0709A 2SD0601A 2SB0709A 2SD0601A XN0B301G

    XN4313

    Abstract: No abstract text available
    Text: Composite Transistors XN04313 XN4313 Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 0.50+0.10 –0.05 • UNR1213 (UN1213) + UNR1113 (UN1113) Tr1 1.1+0.2


    Original     		PDF XN04313 XN4313) UNR1213 UN1213) UNR1113 UN1113) SC-74 XN4313

    2SB0709A

    Abstract: 2SD1328 XN04608 XN04609 XN04609G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04609G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For low frequency output amplification (Tr1) For general amplification (Tr2) •


    Original     		PDF 2002/95/EC) XN04609G 2SD1328 2SB0709A 2SB0709A 2SD1328 XN04608 XN04609 XN04609G

    2N5320

    Abstract: 2N5321 2N5322 2N5323
    Text: 2N5320 2N5321 SMALL SIGNAL NPN TRANSISTORS • ■ ■ SILICON EPITAXIAL PLANAR NPN TRANSISTORS MEDIUM POWER AMPLIFIER PNP COMPLEMENTS ARE 2N5322 AND 2N5323 DESCRIPTION The 2N5320 and 2N5321 are silicon epitaxial planar NPN transistors in Jedec TO-39 metal


    Original     		PDF 2N5320 2N5321 2N5322 2N5323 2N5320 2N5321 2N5323

    2N5322

    Abstract: 2N5323 2N5321 2N5320
    Text: 2N5322 2N5323 SMALL SIGNAL PNP TRANSISTORS • ■ ■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS MEDIUM POWER AMPLIFIER NPN COMPLEMENTS ARE 2N5320 AND 2N5321 DESCRIPTION The 2N5322 and 2N5323 are silicon epitaxial planar PNP transistors in Jedec TO-39 metal


    Original     		PDF 2N5322 2N5323 2N5320 2N5321 2N5322 2N5323 2N5321

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04608G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For general amplification (Tr1) For low frequency output amplification (Tr2) •


    Original     		PDF 2002/95/EC) XN04608G 2SD0601A 2SB0970

    2SB0709A

    Abstract: 2SB709A 2SD0601A 2SD601A XP01601 XP1601
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01601 (XP1601) Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm (0.425) For general amplification 0.20±0.05 5 0.12+0.05 –0.02


    Original     		PDF 2002/95/EC) XP01601 XP1601) 2SB0709A 2SB709A) 2SD0601A 2SD601A) 2SB0709A 2SB709A 2SD0601A 2SD601A XP01601 XP1601

    2SB0709A

    Abstract: 2SD1328 XN04608 XN04609 XN04609G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04609G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For low frequency output amplification (Tr1) For general amplification (Tr2) •


    Original     		PDF 2002/95/EC) XN04609G 2SB0709A 2SD1328 XN04608 XN04609 XN04609G

    2SB0970

    Abstract: 2SD0601A XN04608 XN04608G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04608G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For general amplification (Tr1) For low frequency output amplification (Tr2) •


    Original     		PDF 2002/95/EC) XN04608G 2SB0970 2SD0601A XN04608 XN04608G

    2SB0970

    Abstract: 2SD0601A XN04608 XN04608G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04608G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For general amplification (Tr1) For low frequency output amplification (Tr2) •


    Original     		PDF 2002/95/EC) XN04608G 2SD0601A 2SB0970 2SB0970 2SD0601A XN04608 XN04608G

    UNR2115

    Abstract: UNR2215 XN04315G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04315G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switching/digital circuits • Package • Two elements incorporated into one package


    Original     		PDF 2002/95/EC) XN04315G UNR2115 UNR2215 XN04315G

    transistor 835

    Abstract: Amplifier with transistor BC548 TRANSISTOR regulator AUDIO Amplifier with transistor BC548 transistor 81 110 w 85 transistor 81 110 w 63 transistor transistor 438 TRANSISTOR GUIDE transistor 649
    Text: Philips Semiconductors Alphanumeric index Selection guide PAGE BC327; BC327A; BC328 Silicon planar epitaxial transistor 58 BC337; BC337A; BC338 Silicon planar epitaxial transistor 59 BC546; BC547; BC548 Silicon planar epitaxial transistor 60 BC556; BC557; BC558


    OCR Scan     		PDF BC327; BC327A; BC328 BC337; BC337A; BC338 BC546; BC547; BC548 BC556; transistor 835 Amplifier with transistor BC548 TRANSISTOR regulator AUDIO Amplifier with transistor BC548 transistor 81 110 w 85 transistor 81 110 w 63 transistor transistor 438 TRANSISTOR GUIDE transistor 649

    2N3906 MICRO ELECTRONICS

    Abstract: 3906 pnp 2N3903 2N3904 2N3905 2N3906
    Text: 2N3905 2N 3906 PNP SILICON PLANAR EPITAXIAL TRANSISTORS _ . THE 2N3905 AND 2N3906 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS. THEY ARE INTENDED FOR GENERAL PURPOSE, SATUHATEDSWITCHING AND AMPLIFIER APPLICATIONS. THEY ARE COMPLEMENTAHT TO 2N3903 AND


    OCR Scan     		PDF 2N3905 2N3906 2N3903 2N3904 T0-92A 200mA 350mW 2N3906rent 2N3906 MICRO ELECTRONICS 3906 pnp

    Untitled

    Abstract: No abstract text available
    Text: PZT2222 PZT2222A _ J v _ SILICON PLANAR EPITAXIAL TRANSISTORS NPN silicon planar epitaxial transistors in a m icrom iniatureSM D package SOT-223 , prim arily intended for linear and switching applications. PNP complements are PZT2907/2907A.


    OCR Scan     		PDF PZT2222 PZT2222A OT-223) PZT2907/2907A.

    Untitled

    Abstract: No abstract text available
    Text: J BC 516 BC 517 COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS The BC516 PNP and BC517(NPN) are complementary silicon planar epitaxial darlington transistors designed for preamplifier input stages requiring high input impendence and high gain.


    OCR Scan     		PDF BC516 BC517 T0-92F 400mA 625mW 0430B 0650B 4300B 6500B 20MHz

    Untitled

    Abstract: No abstract text available
    Text: 2N3905 2N3906 PNP SILICON PLANAR EPITAXIAL TRANSI STOBS THE 2N3905 AND 2N3906 ABE PNP SILICON PLANAR EPITAXIAL TRANSISTORS. THEY ARE INTENDED FOR GENERAL PURPOSE, SATUHATEDSWITCHING AND AMPLIFIER APPLICATIONS. THEY ARE COMPLIMENTARY TO 2N3903 AND 2N3904 RESPECTIVELY.


    OCR Scan     		PDF 2N3905 2N3906 2N3905 2N3906 2N3903 2N3904 T0-92A 100MHz 100kHz 100juA

    BC517

    Abstract: BC516 bc516 micro electronics
    Text: J BC 516 BC 517 COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS J The BC516 PNP and BC517(NPN) are complementary silicon planar epitaxial darlington transistors designed for preamplifier input stages requiring high input impendence and high gain.


    OCR Scan     		PDF BC516 BC517 T0-92F 400mA 625mW 100nA 100mA 20MHz bc516 micro electronics

    1N3904

    Abstract: 2N3903 2N3904 2N3906 2N3906/1N3904
    Text: NPN SILICON PLANAR EPITAXIAL TRANSISTORS \ ^ ' r ï y ^ ï Ÿ . . . . . CASE T0-92A 2N3903, 2N3904 are NPN silicon planar epitaxial transistors designed for general purpose switching and amplifier applications. They are complementary to PNP types 2N3905 and 2N3906.


    OCR Scan     		PDF 2N3903, 2N3904 2N3906. T0-92A 200mA 350mW 2N3903 100pA 1N3904 2N3906 2N3906/1N3904

    PN2907A

    Abstract: PN2907
    Text: PN2907 PN2907A _ SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon planar epitaxial transistors in plastic TO-92 package fo r general purpose applications. N-P-N complement is PN2222/A. QUICK REFERENCE D A T A PN2907 PN2907A


    OCR Scan     		PDF PN2907 PN2907A PN2222/A. PN2907A PN2907

    Untitled

    Abstract: No abstract text available
    Text: MPS 6516 thru’ MPS 6519 PNP SILICON PLANAR EPITAXIAL TRANSISTORS CASE T0-92A MPS6516 thru' MPS6519 are PNP silicon planar epitaxial transistors designed for general purpose amplifier applications and for com­ plementary circuitry. ebc ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF T0-92A MPS6516 MPS6519 MPS6519 MPS6516/7/8 MPS6516/7/8 100mA Boxfe477, 100kHz 10kHz