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    Panasonic Electronic Components 2SB09700RL

    TRANS PNP 10V 0.5A MINI3
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    DigiKey 2SB09700RL Reel 3,000
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    2SB0970 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB0970 Panasonic PNP Transistor Original PDF
    2SB0970 Panasonic Silicon PNP epitaxial planar type small signal transistor Original PDF
    2SB0970 Panasonic Silicon PNP epitaxial planer type Original PDF
    2SB09700RL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 10VCEO 500MA MINI-3P Original PDF
    2SB09700SL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 10VCEO 500MA MINI-3P Original PDF
    2SB09701RR Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SB09701RS Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF

    2SB0970 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0970 (2SB970) Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 (0.95) (0.95)


    Original     		PDF 2002/95/EC) 2SB0970 2SB970)

    2SB0970

    Abstract: 2SB970
    Text: Transistor 2SB0970 2SB970 Silicon PNP epitaxial planer type For low-voltage output amplification Unit: mm +0.2 • Features 1.45 0.95 1 3 +0.1 0.4 –0.05 1.9±0.2 0.65±0.15 0.95 +0.2 ● +0.25 1.5 –0.05 0.65±0.15 Low collector to emitter saturation voltage VCE(sat).


    Original     		PDF 2SB0970 2SB970) 2SB0970 2SB970

    Untitled

    Abstract: No abstract text available
    Text: Composite Transistors XN07651 XN7651 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 4 5 6 2 1 0.65±0.15 3 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • ARN-5 + 2SB0970 (2SB970)


    Original     		PDF XN07651 XN7651) 2SB0970 2SB970)

    2SB0970

    Abstract: 2SB970
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0970 (2SB970) Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 3 (0.95) (0.95) Emitter-base voltage (Collector open)


    Original     		PDF 2002/95/EC) 2SB0970 2SB970) SC-59 2SB0970 2SB970

    2SB0970

    Abstract: 2SB970 2SD1328 XN04604 XN4604
    Text: Composite Transistors XN04604 XN4604 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element Parameter 1.1+0.2 –0.1 2SD1328 + 2SB0970(2SB970) ■ Absolute Maximum Ratings


    Original     		PDF XN04604 XN4604) 2SD1328 2SB0970 2SB970) 2SB970 2SD1328 XN04604 XN4604

    Transistor hFE CLASSIFICATION Marking CE

    Abstract: hFE is transistor to-220 Vbe 8 V 2SB0970 2SB970
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0970 (2SB970) Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 Symbol Rating


    Original     		PDF 2002/95/EC) 2SB0970 2SB970) Transistor hFE CLASSIFICATION Marking CE hFE is transistor to-220 Vbe 8 V 2SB0970 2SB970

    2SB0970

    Abstract: 2SB970
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0970 (2SB970) Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 5˚ 2.8+0.2 –0.3 1.50+0.25 –0.05


    Original     		PDF 2002/95/EC) 2SB0970 2SB970) 2SB0970 2SB970

    2SB0970

    Abstract: 2SB970 XN04404 XN4404
    Text: Composite Transistors XN04404 XN4404 Silicon PNP epitaxial planer transistor ● 3 2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 10° ■ Absolute Maximum Ratings Parameter 1.1+0.2 –0.1 2SB0970(2SB970) x 2 elements 0 to 0.1


    Original     		PDF XN04404 XN4404) 2SB0970 2SB970) 2SB970 XN04404 XN4404

    2SB0970

    Abstract: 2SB970
    Text: Transistor 2SB0970 2SB970 Silicon PNP epitaxial planer type For low-voltage output amplification Unit: mm 0.40+0.10 ñ0.05 0.4±0.2 5° 1.50+0.25 -0.05 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and


    Original     		PDF 2SB0970 2SB970) 20nductor 2SB0970 2SB970

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0970 (2SB970) Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 (0.95) (0.95)


    Original     		PDF 2002/95/EC) 2SB0970 2SB970)

    2SB0970

    Abstract: 2SB970
    Text: Transistors 2SB0970 2SB970 Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 (0.95) (0.95) 1.9±0.1 (0.65) 2 1 ■ Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2SB0970 2SB970) 2SB0970 2SB970

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0970 (2SB970) Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06


    Original     		PDF 2002/95/EC) 2SB0970 2SB970)

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01

    XN4608

    Abstract: 2SB0970 2SB970 2SD0601A 2SD601A XN04608
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04608 (XN4608) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Features 3 2 1 (0.65)


    Original     		PDF 2002/95/EC) XN04608 XN4608) XN4608 2SB0970 2SB970 2SD0601A 2SD601A XN04608

    xn07

    Abstract: 2SB0970 2SB970 XN07651 XN7651
    Text: Composite Transistors XN07651 XN7651 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 M Di ain sc te on na tin nc ue e/ d For motor drive 5 6 2 0.30+0.10 –0.05 0.50+0.10 –0.05


    Original     		PDF XN07651 XN7651) xn07 2SB0970 2SB970 XN07651 XN7651

    2SB0970

    Abstract: XN04404G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04404G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification • Package ■ Features ■ Basic Part Number • Code Mini6-G3 • Pin Name


    Original     		PDF 2002/95/EC) XN04404G 2SB0970 XN04404G

    2SB0970

    Abstract: 2SB970 2SD0601A 2SD601A XN04608 XN4608
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04608 (XN4608) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For general amplification (Tr1) For amplification of low-frequency output (Tr2)


    Original     		PDF 2002/95/EC) XN04608 XN4608) 2SB0970 2SB970 2SD0601A 2SD601A XN04608 XN4608

    2SB0970

    Abstract: 2SD1328 XN04604 XN04604G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04604G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For low frequency output amplification • Package  Code Mini6-G3  Pin Name


    Original     		PDF 2002/95/EC) XN04604G 2SD1328 2SB0970 2SB0970 2SD1328 XN04604 XN04604G

    2SB0970

    Abstract: 2SB970 XN04404 XN4404
    Text: Composite Transistors XN04404 XN4404 Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 6 3 2 1 0.65±0.15 • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 0.30+0.10


    Original     		PDF XN04404 XN4404) 2SB0970 2SB970) 2SB0970 2SB970 XN04404 XN4404

    2SB0970

    Abstract: XN04404G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04404G Silicon PNP epitaxial planar type For general amplification • Package ■ Features • Code Mini6-G3 • Pin Name Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b


    Original     		PDF 2002/95/EC) XN04404G 2SB0970 XN04404G

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    K 2411

    Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
    Text: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type


    OCR Scan     		PDF 3SK241 T0220F K 2411 k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019

    2SB0774

    Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)


    OCR Scan     		PDF O-126 2SC2258 2SC3063 2SC5340 O-202 T0-220 O-220F 2SC2923 2SC4714 2SC3942 2SB0774 2SA2004 2SB160 2SB642