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    2N4427 Search Results

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    2N4427 Price and Stock

    Microchip Technology Inc 2N4427

    RF TRANS NPN 40V 500MHZ TO39
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    NexGen Digital 2N4427 359
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    Avnet Silica 2N4427 38 Weeks 1
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    Central Semiconductor Corp 2N4427

    RF TRANS NPN 20V 500MHZ TO39
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    DigiKey 2N4427 Box 500
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    RCA 2N44 27 76-08

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    Bristol Electronics 2N44 27 76-08 6
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    Motorola Semiconductor Products 2N4427

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    Quest Components 2N4427 16
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    2N4427 1
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    2N4427 1
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    ES Components 2N4427 387
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    NSJ 2N4427

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    2N4427 Datasheets (51)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N4427 Advanced Power Technology RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Original PDF
    2N4427 Advanced Semiconductor NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    2N4427 Central Semiconductor NPN SILICON RF TRANSISTOR Original PDF
    2N4427 Central Semiconductor Small Signal Transistors Original PDF
    2N4427 Microsemi RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=0.4 / Hfe=10-200 / fT(Hz)=500M / Pwr(W)=2 Original PDF
    2N4427 Philips Semiconductors Silicon planar epitaxial overlay transistors - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=0.4 / Hfe=10-200 / fT(Hz)=500M / Pwr(W)=2 Original PDF
    2N4427 Philips Semiconductors Silicon Epitaxial Planar Overlay Transistors Original PDF
    2N4427 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=0.4 / Hfe=10-200 / fT(Hz)=500M / Pwr(W)=2 Original PDF
    2N4427 Diode Transistor SMALL SIGNAL TRANSISTORS Scan PDF
    2N4427 Diode Transistor NPN Small Signal Transistors Scan PDF
    2N4427 Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF
    2N4427 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    2N4427 Ferranti Semiconductors RF Diodes and Transistors 1977 Scan PDF
    2N4427 General Transistor Transistors for RF Applications Scan PDF
    2N4427 ITT Semiconductors Semiconductor Summary 1969 Scan PDF
    2N4427 Motorola The European Selection Data Book 1976 Scan PDF
    2N4427 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N4427 Motorola European Master Selection Guide 1986 Scan PDF
    2N4427 Mullard Quick Reference Guide 1977/78 Scan PDF
    2N4427 Unknown Transistor Shortform Datasheet & Cross References Scan PDF

    2N4427 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N4427

    Abstract: 1300 NPN MRF553 MRF555 MRF559 MRF607 2N3866A 2N5179 2N6255 MRF4427
    Text: 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 1. Emitter 2. Base 3. Collector 500 MHz Current-Gain Bandwidth Product @ 50mA TO-39


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    2N4427 To-39 MRF4427, 2N4427 1300 NPN MRF553 MRF555 MRF559 MRF607 2N3866A 2N5179 2N6255 MRF4427 PDF

    2n4427 MOTOROLA

    Abstract: motorola 2N4427 2N4427 BFR90 amplifier 2N4427 equivalent bfr91 npn UHF transistor 2N5179 npn UHF transistor BFR96 LOW POWER TRANSISTOR MRF581A mrf5943c motorola
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz


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    2N4427 To-39 BFR91 BFR90 MRF545 MRF544 MSC1301 2n4427 MOTOROLA motorola 2N4427 2N4427 BFR90 amplifier 2N4427 equivalent bfr91 npn UHF transistor 2N5179 npn UHF transistor BFR96 LOW POWER TRANSISTOR MRF581A mrf5943c motorola PDF

    transistor 2N4427

    Abstract: 2N4427
    Text: 2N4427 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)


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    2N4427 O205AD) 1-Aug-02 transistor 2N4427 2N4427 PDF

    2N4041

    Abstract: 2N4127 2N3924 2N5016 2N5102 2N5108 2N3553 2N3632 2N3733 2N5421
    Text: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108


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    2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4041 2N4127 2N5016 2N5102 2N5108 2N5421 PDF

    SRK-2001

    Abstract: 2N3375 srf transistor SRK2002 SRF-1001 SRF1002 2N4440 2N2876 solitron transistors 2N5016
    Text: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108


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    2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 SRK-2001 srf transistor SRK2002 SRF-1001 SRF1002 2N4440 solitron transistors 2N5016 PDF

    2n4427

    Abstract: transistor 2N4427 high frequency transistor 2N4427 equivalent
    Text: 2N4427 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The ASI 2N4427 is a High Frequency Transistor Designed for Amplifier and Oscillator Applications. MAXIMUM RATINGS 400 mA IC VCE 20 V PDISS 3.5 W @ TC = 25 °C TJ -65 °C to +200 °C


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    2N4427 2N4427 transistor 2N4427 high frequency transistor 2N4427 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N4427 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)


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    2N4427 O205AD) 19-Jun-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N4427 w w w. c e n t r a l s e m i . c o m SILICON NPN RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4427 is a silicon types are silicon NPN epitaxial planar RF transistor mounted in a hermetically sealed package designed for high frequency amplifier applications.


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    2N4427 2N4427 100mA, 100mA 360mA 200MHz 100mW, 175MHz PDF

    2n4427

    Abstract: 2N3866
    Text: tPiotLati, Gnu. <J\fuxr TELEPHONE: 973 376-2922 20 STERN AVE. SPHINQRELD, NEW JERSEY 07081 U S.A. (212)227-6005 FAX: (973) 376-6960 Silicon planar epitaxial overlay transistors 2N3866; 2N4427 APPLICATIONS DESCRIPTION NPN overlay transistors in TO-39 metal packages with the


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    2N3866; 2N4427 O-39/1 2N3866 2n4427 2N3866 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N4427 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)40 I(C) Max. (A)400m# Absolute Max. Power Diss. (W)3.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)20u° @V(CBO) (V) (Test Condition)12


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    2N4427 Freq500M PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N4427 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)


    Original
    2N4427 O205AD) 17-Jul-02 PDF

    2n3866

    Abstract: 2n4427 2N3866 application note 2N3866 class-a 2n3866 philips RF 2N3866 2N3866 metal data 2n3866 2N3866 application Transistor 2n4427
    Text: DISCRETE SEMICONDUCTORS DATA SHEET 2N3866; 2N4427 Silicon planar epitaxial overlay transistors Product specification Supersedes data of August 1986 File under Discrete Semiconductors, SC08a 1995 Oct 27 Philips Semiconductors Product specification Silicon planar epitaxial


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    2N3866; 2N4427 SC08a O-39/1 2n3866 2n4427 2N3866 application note 2N3866 class-a 2n3866 philips RF 2N3866 2N3866 metal data 2n3866 2N3866 application Transistor 2n4427 PDF

    2N4427

    Abstract: BFR98 transistor 2N4427 2n4427-bfr98
    Text: 2N4427 BFR98 VHF OSCILLATOR POWER AMPLIFIER DESCRIPTION The 2N4427 and BFR98 are silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. They are designed for VHF class A, B, or C amplifier and oscillator applications. TO-39 INTERNAL SCHEMATIC DIAGRAM


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    2N4427 BFR98 2N4427 BFR98 2N4427-BFR98 transistor 2N4427 2n4427-bfr98 PDF

    2n4427 MOTOROLA

    Abstract: motorola 2N4427 2n4427 MSC1301 Transistor 2n4427 2N3866 MOTOROLA 2N4427 equivalent MOTOROLA 2N5179 MOTOROLA SELECTION NPN Transistor output 10 w MRF559
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 500 MHz Current-Gain Bandwidth Product @ 50mA


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    2N4427 To-39 MRF4427, MSC1301 2n4427 MOTOROLA motorola 2N4427 2n4427 Transistor 2n4427 2N3866 MOTOROLA 2N4427 equivalent MOTOROLA 2N5179 MOTOROLA SELECTION NPN Transistor output 10 w MRF559 PDF

    Transistor 2n4427

    Abstract: No abstract text available
    Text: 2N4427 w w w. c e n t r a l s e m i . c o m SILICON NPN RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4427 is a silicon NPN epitaxial planar RF transistor mounted in a hermetically sealed package designed for high frequency amplifier applications.


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    2N4427 2N4427 100mA, 100mA 360mA 200MHz 100mW, 175MHz Transistor 2n4427 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF4427 The RF Line DIE SOURCE SAME AS 2N4427 N P N S ilic o n RF L o w P o w e r T ra n s is to r 1.0 W — 175 M H z HIGH F R E Q U E N C Y T R A N S IS TO R N PN SILICON . . . d e s ig n e d fo r a m p lifie r , fre q u e n c y m u ltip lie r , o r o s c illa to r a p p lic a tio n s in in d u s tria l


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    MRF4427 2N4427 PDF

    2N4427 equivalent

    Abstract: RCA-2N4427 2N4427 2n4427 rca Trimmer ARCO Transistor 2n4427
    Text: File No. 228 roQBZ/D RF Power Transistors Solid State Division _ 2N4427 Silicon N-P-N Overlay Transistor High-G ain D river fo r V H F -U H F Features: • 1 W o u tp u t w ith 10 d B gain m in . at 1 7 5 M H z VCC - 12 V ■ 0 .4 W o u tp u t w ith 5 d B gain (ty p .) a t 470 M H z


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    2N4427 RCA-2N4427 2N4427 equivalent 2N4427 2n4427 rca Trimmer ARCO Transistor 2n4427 PDF

    2N3866

    Abstract: 2n4427 philips ferroxcube 4312 020 36690 2N3866 class-a Transistor 2N3866 2N3866 metal Philips 4312 020 4312 020 36640 transistor 2N4427 2N3866 application
    Text: • bb53^31 N AflER 0Q2T7Ö1 b02 * A P X PHILIPS/DISCRETE bTE 2N3866 2N4427 P SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N o verlay transistors in T O -3 9 m etal envelopes w ith the c o lle c to r connected to the case. T he devices are p rim a rily intended fo r class-A, B o r C am plifiers, frequency m u ltip lie r and o sc illa to r circuits.


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    bb53131 0Q217Ã 2N3866 2N4427 bb53T31 2n4427 philips ferroxcube 4312 020 36690 2N3866 class-a Transistor 2N3866 2N3866 metal Philips 4312 020 4312 020 36640 transistor 2N4427 2N3866 application PDF

    a7f transistor

    Abstract: 2N4427 BFR98 npn zg Transistor 2n4427 A-7-F
    Text: r Z Z SCS-THO M SO N ^7# 2N4427 BFR98 VHF OSCILLATOR POWER AMPLIFIER DESCRIPTION The 2N4427 and BFR98 are silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. They are designed for VHF class A, B, or C amplifier and os­ cillator applications.


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    2N4427 BFR98 2N4427 BFR98 2N4427-BFR98 a7f transistor npn zg Transistor 2n4427 A-7-F PDF

    2n4427

    Abstract: 2N3866 Transistor 2N3866 2N3866 metal 2N3866 RF CLASS A Philips 4312 020 RF 2N3866 2N3866 class-a 2n3866 philips 4312 020 36640
    Text: b5E D 711Dfl2b 00L3b7fl CHG • PHIN 2N3866 2N4427 PHILIPS INTERNATIONAL SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N overlay transistors in TO-39 metal envelopes with the collector connected to the case. The devices are primarily intended for class-A, B or C amplifiers, frequency multiplier and oscillator circuits.


    OCR Scan
    711Dfl2b 00L3b7fl 2N3866 2N4427 2N3866 711002b 00b3bà 2n4427 Transistor 2N3866 2N3866 metal 2N3866 RF CLASS A Philips 4312 020 RF 2N3866 2N3866 class-a 2n3866 philips 4312 020 36640 PDF

    2n4427 MOTOROLA

    Abstract: 2N4427
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4427 The R F Line 1 W - 1 7 5 MHz NPN SILICON HIGH FREQUENCY TRANSISTOR HIGH FREQUENCY TRANSISTOR . . . designed fo r am plifier, frequency m ultiplier, or oscillator N PN SILIC O N applications in m ilita ry and industrial equipm ent. Suitable fo r use


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    2N4427 2n4427 MOTOROLA 2N4427 PDF

    t 3866 power transistor

    Abstract: transistor 3866 s t 3866 transistor transistor 3866
    Text: • bb53131 0031761 b03 H A P X N AflER PHILIPS/DISCRETE 2N3866 2N4427 blE D SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N overlay transistors in TO-39 metal envelopes with the collector connected to the case. The devices are prim arily intended fo r class-A, B or C amplifiers, frequency m ultiplier and oscillator circuits.


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    bb53131 2N3866 2N4427 t 3866 power transistor transistor 3866 s t 3866 transistor transistor 3866 PDF

    Transistor BFR 98

    Abstract: 2N4427 2902N 2N4421 BFR98 multi emitter transistor Planar choke 4427 LA 4427 200mhz 1w
    Text: 2N4427 BFR 98 MULTI-EMITTER SILICON PLANAR NPN V H F O S C ILL A T O R POWER A M P L IF IE R T h e 2 N 4 4 2 7 /B F R 9 8 is; a silicon p lanar e p ita x ia l N P N tran sisto r in Jedec T O - 3 9 m etal case. It is designed fo r V H F class A , B, or C a m p lifie r and o s cilla to r applicatio ns.


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    4427/BFR98 2N4427 BFR98 E-0002 Transistor BFR 98 2902N 2N4421 BFR98 multi emitter transistor Planar choke 4427 LA 4427 200mhz 1w PDF

    Untitled

    Abstract: No abstract text available
    Text: 3QE D • 0 Q 31 22 1 5 ■ ~T> -3 3 -0 3 SGS-THOMSON [»^ miOTFlFMOfOS 2N4427 BFR98 S G S-THOMSON -— — - VHF OSCILLATOR POWER AMPLIFIER DESC RIPTIO N The 2N4427 and BFR98 are silicon planar epitaxial NPN transistor in JedecTO-39 metal case. They are designed for VHF class A, B, or C amplifier and os­


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    2N4427 BFR98 2N4427 BFR98 JedecTO-39 2N4427-BFR98 PDF