Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SIHF22N60 Search Results

    SF Impression Pixel

    SIHF22N60 Price and Stock

    Vishay Siliconix SIHF22N60E-GE3

    MOSFET N-CH 600V 21A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHF22N60E-GE3 Tube 946 1
    • 1 $4.96
    • 10 $4.96
    • 100 $4.96
    • 1000 $1.8125
    • 10000 $1.8125
    		Buy Now

    Vishay Siliconix SIHF22N60S-E3

    MOSFET N-CH 600V 22A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHF22N60S-E3 Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.6789
    • 10000 $1.6789
    		Buy Now

    Vishay Siliconix SIHF22N60E-E3

    MOSFET N-CH 600V 21A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHF22N60E-E3 Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.61831
    • 10000 $1.61831
    		Buy Now

    Vishay Intertechnologies SIHF22N60E-GE3

    N-CHANNEL 600V - Bulk (Alt: 19X1936)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIHF22N60E-GE3 Bulk 8 Weeks, 4 Days 1
    • 1 $4.06
    • 10 $3.76
    • 100 $2.48
    • 1000 $2.48
    • 10000 $2.48
    		Buy Now
    SIHF22N60E-GE3 Reel 18 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.8125
    • 10000 $1.7052
    		Buy Now
    Mouser Electronics SIHF22N60E-GE3 1,348
    • 1 $4.07
    • 10 $3.25
    • 100 $2.21
    • 1000 $1.85
    • 10000 $1.81
    		Buy Now
    Newark SIHF22N60E-GE3 Bulk 114 1
    • 1 $2.45
    • 10 $2.45
    • 100 $2.07
    • 1000 $2.07
    • 10000 $2.07
    		Buy Now
    TTI SIHF22N60E-GE3 Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.87
    • 10000 $1.81
    		Buy Now
    TME SIHF22N60E-GE3 1
    • 1 $3.79
    • 10 $3.42
    • 100 $2.71
    • 1000 $2.54
    • 10000 $2.54
    		Get Quote
    Avnet Asia SIHF22N60E-GE3 21 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    EBV Elektronik SIHF22N60E-GE3 19 Weeks 50
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Vishay Intertechnologies SIHF22N60E-E3

    N-CHANNEL 600V - Rail/Tube (Alt: SIHF22N60E-E3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIHF22N60E-E3 Tube 18 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.5925
    • 10000 $1.5264
    		Buy Now
    Mouser Electronics SIHF22N60E-E3
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    TTI SIHF22N60E-E3 Reel 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.62
    • 10000 $1.59
    		Buy Now
    EBV Elektronik SIHF22N60E-E3 19 Weeks 50
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Find more SIHF22N60 price and stock on Findchips.com

    SIHF22N60 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHF22N60E-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A TO220 Original PDF
    SIHF22N60E-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A TO220 Original PDF
    SIHF22N60S-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 22A TO220FP Original PDF

    SIHF22N60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SiHF22N60

    Abstract: SiHF22N60S-E3 0949 sihF22n6
    Text: SiHF22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) () VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 Qgd (nC) 25 • Ultra Low Ron


    Original     		SiHF22N60S 2002/95/EC O-220 SiHF22N60S-E3 11-Mar-11 SiHF22N60 0949 sihF22n6 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		SiHF22N60E 2002/95/EC O-220 11-Mar-11 PDF

    SiHF22N60

    Abstract: SiHF22N60S-E3
    Text: SiHF22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability


    Original     		SiHF22N60S O-220 2002/95/EC SiHF22N60S-E3 18-Jul-08 SiHF22N60 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHF22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation One • High EAR Capability 650 RDS(on) max. at 25 °C () VGS = 10 V 0.190 98 • Lower Figure-of-Merit Ron x Qg Qgs (nC) 17 • 100 % Avalanche Tested


    Original     		SiHF22N60S 2002/95/EC O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHF22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation one 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • High EAR capability 0.190 Qg max. (nC) 98 • Lower figure-of-merit Ron x Qg Qgs (nC)


    Original     		SiHF22N60S O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single APPLICATIONS D


    Original     		SiHF22N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SIHF22N60E

    Abstract: No abstract text available
    Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		SiHF22N60E 2002/95/EC O-220 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHF22N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		SiHF22N60E AN609, 2985m 2220m 4617m 0477m 0778m 9408m 20-Jun-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHF22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation One • High EAR Capability 650 RDS(on) max. at 25 °C () VGS = 10 V 0.190 98 • Lower Figure-of-Merit Ron x Qg Qgs (nC) 17 • 100 % Avalanche Tested


    Original     		SiHF22N60S 2002/95/EC O-220 11-Mar-11 PDF

    sihf22n60

    Abstract: No abstract text available
    Text: SiHF22N60S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		SiHF22N60S AN609, 02-Nov-10 8250m 6016m 0775m 2647m 8575m 0718m sihf22n60 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single D APPLICATIONS


    Original     		SiHF22N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHF22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation One • High EAR Capability 650 RDS(on) max. at 25 °C () VGS = 10 V 0.190 98 • Lower Figure-of-Merit Ron x Qg Qgs (nC) 17 • 100 % Avalanche Tested


    Original     		SiHF22N60S O-220 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    sihf22n60

    Abstract: No abstract text available
    Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single D Generation Two


    Original     		SiHF22N60E 2002/95/EC O-220 11-Mar-11 sihf22n60 PDF

    SIHF22N60E-GE3

    Abstract: No abstract text available
    Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		SiHF22N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SIHF22N60E-GE3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		SiHF22N60E 2002/95/EC O-220 11-Mar-11 PDF

    SIHP22N60S-E3

    Abstract: max6265 siliconix mosfet marking to-220
    Text: Preliminary SiHP22N60S, SiHF22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.19 Qg (Max.) (nC) 96 • 100 % Avalanche tested Qgs (nC) 17


    Original     		SiHP22N60S SiHF22N60S O-220 O-220 SiHP22N60S-E3 SiHF22N60S-E3 18-Jul-08 max6265 siliconix mosfet marking to-220 PDF

    SiHF22N60S-E3

    Abstract: No abstract text available
    Text: SiHF22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability


    Original     		SiHF22N60S O-220 2002/95/EC SiHF22N60S-E3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single D Low Figure-of-Merit (FOM) Ron x Qg


    Original     		SiHF22N60E O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    TO-247 FULLPAK Package

    Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 30 % Reduction in Specific On-Resistance I INNOVAT AND TEC O L OGY E Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 600 V and 650 V High-Performance MOSFETs E Series 600 V and 650 V, Super Junction N-Channel Power MOSFETs with a 30 % Reduction


    Original     		enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E PDF

    60 SMD 5050 Ultra Bright LEDs

    Abstract: MMA 0204 HV - Professional
    Text: Vishay Intertechnology, Inc. One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components To view datasheets of the products contained in the Engineer’s Toolbox, please visit www.vishay.com/ref/et1 Alternative


    Original     		VMN-MS6495-1011 60 SMD 5050 Ultra Bright LEDs MMA 0204 HV - Professional PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 PDF

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHG22N 6 0 S, SiHP22N 6 0 S, SiHB22N 6 0 S, SiHF22N 6 0 S Super Junction Technology in TO-220, TO-247, TO-220F, and TO-263 Packages Key Benefits • • • • • • • • • • • Dramatic reduction of maximum RDS on at VGS = 10 V: 0.190 Ω Ultra-low gate charge: Qg = 98 nC


    Original     		SiHG22N SiHP22N SiHB22N SiHF22N O-220, O-247, O-220F, O-263 O-263) PDF

    vo3120

    Abstract: igbt induction stove 40v diode 6260 thermal MSS1P3U SMPS Solar Battery chargers VO3150A military passive component Vishay MKP 1848 VO3150
    Text: Vishay Intertechnology, Inc. Super 12 Featured Products www.vishay.com/landingpage/super12/2010 S12 Super 12 Featured Products 597D and T97 Multi-Anode Tantalum Capacitors Industry’s First 75-V-Rated Tantalum Capacitors DrMOS 6x6 – SiC769 Industry-Best Power Density for Mainstream


    Original     		com/landingpage/super12/2010 SiC769 VMN-MS6398-1002 vo3120 igbt induction stove 40v diode 6260 thermal MSS1P3U SMPS Solar Battery chargers VO3150A military passive component Vishay MKP 1848 VO3150 PDF