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    SIHG47N60 Price and Stock

    Vishay Siliconix SIHG47N60AE-GE3

    MOSFET N-CH 600V 43A TO247AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHG47N60AE-GE3 Tube 3,338 1
    • 1 $5.27
    • 10 $5.27
    • 100 $3.8962
    • 1000 $3.8962
    • 10000 $3.8962
    		Buy Now

    Vishay Siliconix SIHG47N60EF-GE3

    MOSFET N-CH 600V 47A TO247AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHG47N60EF-GE3 Tube 463 1
    • 1 $6.73
    • 10 $5.765
    • 100 $4.975
    • 1000 $4.975
    • 10000 $4.975
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    New Advantage Corporation SIHG47N60EF-GE3 5,000 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 $9.03
    • 10000 $8.43
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    Vishay Siliconix SIHG47N60E-GE3

    MOSFET N-CH 600V 47A TO247AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHG47N60E-GE3 Tube 385 1
    • 1 $9.37
    • 10 $9.37
    • 100 $6.6963
    • 1000 $5.31765
    • 10000 $4.98284
    		Buy Now

    Vishay Siliconix SIHG47N60AEF-GE3

    MOSFET N-CH 600V 40A TO247AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHG47N60AEF-GE3 Tube 280 1
    • 1 $8.41
    • 10 $8.41
    • 100 $6.0095
    • 1000 $4.77225
    • 10000 $4.47178
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    Vishay Siliconix SIHG47N60E-E3

    MOSFET N-CH 600V 47A TO247AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHG47N60E-E3 Tube 225 1
    • 1 $9.37
    • 10 $9.37
    • 100 $6.6963
    • 1000 $5.31765
    • 10000 $4.98284
    		Buy Now
    Bristol Electronics SIHG47N60E-E3 627
    • 1 -
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    • 10000 -
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    Quest Components SIHG47N60E-E3 501
    • 1 $12.492
    • 10 $12.492
    • 100 $12.492
    • 1000 $6.246
    • 10000 $6.246
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    SIHG47N60E-E3 20
    • 1 $13.0196
    • 10 $11.573
    • 100 $11.573
    • 1000 $11.573
    • 10000 $11.573
    		Buy Now
    Find more SIHG47N60 price and stock on Findchips.com

    SIHG47N60 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIHG47N60AEF-GE3 Vishay Siliconix MOSFET N-CH 600V 40A TO247AC Original PDF
    SIHG47N60AE-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 43A TO247AC Original PDF
    SIHG47N60AEL-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 600V Original PDF
    SIHG47N60E-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 47A TO247AC Original PDF
    SIHG47N60EF-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 47A TO247AC Original PDF
    SIHG47N60E-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 47A TO247AC Original PDF
    SIHG47N60S-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 47A TO247AC Original PDF

    SIHG47N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SiHG47N60S

    Abstract: ktp12
    Text: SiHG47N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 650 • 100 % Avalanche Tested RoHS 216 • Ultra Low Gate Charge COMPLIANT Qgs (nC) 39 • Ultra Low Ron Qgd (nC) 57 • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF SiHG47N60S 2002/95/EC O-247AC SiHG47N60S-E3 11-Mar-11 ktp12

    C180-24

    Abstract: No abstract text available
    Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.064 Qg max. (nC) 220 Qgs (nC) 36 Qgd (nC) 60 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHG47N60E O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 C180-24

    Untitled

    Abstract: No abstract text available
    Text: SiHG47N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHG47N60E AN609, 5391m 4083m 1563m 0804m 3952m 4962m 3204m 3423m

    4810 mosfet

    Abstract: No abstract text available
    Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.064 Qg max. (nC) 220 • Reduced Switching and Conduction Losses


    Original     		PDF SiHG47N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 4810 mosfet

    pfc power supply

    Abstract: No abstract text available
    Text: SiHG47N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Generation One 650 RDS(on) max. at 25 °C () VGS = 10 V 0.07 • Low Figure-of-Merit Ron x Qg RoHS COMPLIANT Qg max. (nC) 216 • 100 % Avalanche Tested


    Original     		PDF SiHG47N60S 2002/95/EC O-247AC O-247AC SiHG47N60S-E3 11-Mar-11 pfc power supply

    Untitled

    Abstract: No abstract text available
    Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PPRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low input capacitance (Ciss) 0.064 Qg max. (nC) 220 • Reduced switching and conduction losses


    Original     		PDF SiHG47N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    sihg47n60ef

    Abstract: No abstract text available
    Text: SiHG47N60EF www.vishay.com Vishay Siliconix E Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast Body Diode MOSFET Using E Series Technoloy • Reduced trr, Qrr, and IRRM • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss)


    Original     		PDF SiHG47N60EF O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SiHG47N60S

    Abstract: TRANSFORMER 220 to 14V ktp12 SIHG47N60S-E3
    Text: SiHG47N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 650 V RDS(on) () VGS = 10 V 0.07 Qg (Max.) (nC) 216 Qgs (nC) 39 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved • Lowest RDS(on) for TO-247AC Package


    Original     		PDF SiHG47N60S O-247AC 2002/95/EC O-247AC SiHG47N60S-E3 18-Jul-08 TRANSFORMER 220 to 14V ktp12

    Untitled

    Abstract: No abstract text available
    Text: SiHG47N60EF www.vishay.com Vishay Siliconix EF Series Power Fast Body Diode MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast Body Diode MOSFET Using E Series Technoloy • Reduced trr, Qrr, and IRRM • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss)


    Original     		PDF SiHG47N60EF O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.064 Qg max. (nC) 220 • Reduced Switching and Conduction Losses


    Original     		PDF SiHG47N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: V ishay I ntertechn o l o g y, I nc . MOSFETs - Able to Withstand High Energy Pulses AND TEC I INNOVAT O L OGY SiHG47N60S-E3 N HN High-Voltage Power mosfets O 19 62-2012 600-V N-Channel MOSFETs Use Super Junction Technology to Minimize On-Resistance and Withstand High Energy Pulses


    Original     		PDF SiHG47N60S-E3 2002/95/EC SiHG47N60S S11-1882-Rev. 26-Sep-11 VMN-PT0239-1112

    Untitled

    Abstract: No abstract text available
    Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss) • Reduced Switching and Conduction Losses


    Original     		PDF SiHG47N60E 2002/95/EC O-247AC 11-Mar-11

    4810 mosfet

    Abstract: SIHG47N60E
    Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss) • Reduced Switching and Conduction Losses


    Original     		PDF SiHG47N60E 2002/95/EC O-247AC 11-Mar-11 4810 mosfet

    Untitled

    Abstract: No abstract text available
    Text: SiHG47N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Generation One 650 RDS(on) max. at 25 °C () VGS = 10 V 0.07 • Low Figure-of-Merit Ron x Qg RoHS COMPLIANT Qg max. (nC) 216 • 100 % Avalanche Tested


    Original     		PDF SiHG47N60S 2002/95/EC O-247AC SiHG47electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: 2014 Super 12 Products SiHG47N60E / E Series High-Voltage MOSFETs SiHG47N60E / E Series Low Conduction and Switching Losses for Use in a Wide Range of Products • • Features • High performance – Low RDS ON , QSW and COSS for high efficiency › Low FOM (low RDS(ON) x Qg)


    Original     		PDF SiHG47N60E O-247

    sihg47n60

    Abstract: No abstract text available
    Text: SiHG47N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Generation One 650 RDS(on) max. at 25 °C () VGS = 10 V 0.07 • Low Figure-of-Merit Ron x Qg RoHS COMPLIANT Qg max. (nC) 216 • 100 % Avalanche Tested


    Original     		PDF SiHG47N60S 2002/95/EC O-247AC O-247AC SiHG47N60S-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sihg47n60

    Untitled

    Abstract: No abstract text available
    Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PPRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.064 Qg max. (nC) 220 • Reduced switching and conduction losses


    Original     		PDF SiHG47N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    sihg47n60s-e3

    Abstract: SIHG47N60S
    Text: SiHG47N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 650 V RDS(on) () VGS = 10 V 0.07 Qg (Max.) (nC) 216 Qgs (nC) 39 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved • Lowest RDS(on) for TO-247AC Package


    Original     		PDF SiHG47N60S O-247AC 2002/95/EC O-247AC SiHG47N60S-E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.064 Qg max. (nC) 220 Qgs (nC) 36 Qgd (nC) 60 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHG47N60E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    AN609

    Abstract: SiHG47N60S
    Text: SiHG47N60S_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHG47N60S AN609, 9561m 2375m 7316m 0071m AN609

    Untitled

    Abstract: No abstract text available
    Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.064 Qg max. (nC) 220 Qgs (nC) 36 Qgd (nC) 60 Configuration Single Generation Two


    Original     		PDF SiHG47N60E 2002/95/EC O-247AC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiHG47N60EF_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHG47N60EF AN609, 3917m 8866m 2793m 1544m 10-Jun-13

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiHG47N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Ultra Low Qg High Current

    Abstract: No abstract text available
    Text: V ishay I ntertechn o l o g y, I nc . MOSFETs - Able to Withstand High Energy Pulses AND TEC I INNOVAT O L OGY SiHG47N60S-E3 N HN High-Voltage Power mosfet O 19 62-2012 600-V N-Channel MOSFETs Use Super Junction Technology to Minimize On-Resistance and Withstand High Energy Pulses


    Original     		PDF SiHG47N60S-E3 2002/95/EC SiHG47N60S S11-1882-Rev. 26-Sep-11 VMN-PT0239-1112 Ultra Low Qg High Current