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    SIHF22N Price and Stock

    Vishay Siliconix SIHF22N60E-GE3

    MOSFET N-CH 600V 21A TO220
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    DigiKey SIHF22N60E-GE3 Tube 950 1
    • 1 $2.73
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    • 100 $1.8531
    • 1000 $1.8125
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    Vishay Siliconix SIHF22N60S-E3

    MOSFET N-CH 600V 22A TO220
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    DigiKey SIHF22N60S-E3 Tube
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    Vishay Siliconix SIHF22N60E-E3

    MOSFET N-CH 600V 21A TO220
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    DigiKey SIHF22N60E-E3 Tube 1,000
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    Vishay Siliconix SIHF22N65E-GE3

    MOSFET N-CH 650V 22A TO220
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    DigiKey SIHF22N65E-GE3 Tube 1,000
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    Vishay Intertechnologies SIHF22N65E-GE3

    N-CHANNEL 650V - Tape and Reel (Alt: SIHF22N65E-GE3)
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    Avnet Americas SIHF22N65E-GE3 Reel 18 Weeks 1,000
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    Mouser Electronics SIHF22N65E-GE3
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    TME SIHF22N65E-GE3 1
    • 1 $4.67
    • 10 $4.21
    • 100 $3.34
    • 1000 $3.12
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    EBV Elektronik SIHF22N65E-GE3 19 Weeks 50
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    Find more SIHF22N price and stock on Findchips.com

    SIHF22N Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIHF22N60E-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A TO220 Original PDF
    SIHF22N60E-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A TO220 Original PDF
    SIHF22N60S-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 22A TO220FP Original PDF
    SIHF22N65E-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 22A TO-220FK Original PDF

    SIHF22N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SiHF22N60

    Abstract: SiHF22N60S-E3 0949 sihF22n6
    Text: SiHF22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) () VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 Qgd (nC) 25 • Ultra Low Ron


    Original     		PDF SiHF22N60S 2002/95/EC O-220 SiHF22N60S-E3 11-Mar-11 SiHF22N60 0949 sihF22n6

    Untitled

    Abstract: No abstract text available
    Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHF22N60E 2002/95/EC O-220 11-Mar-11

    SiHF22N60

    Abstract: SiHF22N60S-E3
    Text: SiHF22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability


    Original     		PDF SiHF22N60S O-220 2002/95/EC SiHF22N60S-E3 18-Jul-08 SiHF22N60

    Untitled

    Abstract: No abstract text available
    Text: SiHF22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation One • High EAR Capability 650 RDS(on) max. at 25 °C () VGS = 10 V 0.190 98 • Lower Figure-of-Merit Ron x Qg Qgs (nC) 17 • 100 % Avalanche Tested


    Original     		PDF SiHF22N60S 2002/95/EC O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHF22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation one 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • High EAR capability 0.190 Qg max. (nC) 98 • Lower figure-of-merit Ron x Qg Qgs (nC)


    Original     		PDF SiHF22N60S O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single APPLICATIONS D


    Original     		PDF SiHF22N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SIHF22N60E

    Abstract: No abstract text available
    Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHF22N60E 2002/95/EC O-220 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiHF22N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHF22N60E AN609, 2985m 2220m 4617m 0477m 0778m 9408m 20-Jun-12

    Untitled

    Abstract: No abstract text available
    Text: SiHF22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.18 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single Note * This datasheet provides information about parts that are


    Original     		PDF SiHF22N65E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHF22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation One • High EAR Capability 650 RDS(on) max. at 25 °C () VGS = 10 V 0.190 98 • Lower Figure-of-Merit Ron x Qg Qgs (nC) 17 • 100 % Avalanche Tested


    Original     		PDF SiHF22N60S 2002/95/EC O-220 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiHG22N 6 0 S, SiHP22N 6 0 S, SiHB22N 6 0 S, SiHF22N 6 0 S Super Junction Technology in TO-220, TO-247, TO-220F, and TO-263 Packages Key Benefits • • • • • • • • • • • Dramatic reduction of maximum RDS on at VGS = 10 V: 0.190 Ω Ultra-low gate charge: Qg = 98 nC


    Original     		PDF SiHG22N SiHP22N SiHB22N SiHF22N O-220, O-247, O-220F, O-263 O-263)

    Untitled

    Abstract: No abstract text available
    Text: SiHF22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single Note * Lead (Pb)-containing terminations are not RoHS-compliant.


    Original     		PDF SiHF22N65E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    sihf22n60

    Abstract: No abstract text available
    Text: SiHF22N60S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiHF22N60S AN609, 02-Nov-10 8250m 6016m 0775m 2647m 8575m 0718m sihf22n60

    Untitled

    Abstract: No abstract text available
    Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single D APPLICATIONS


    Original     		PDF SiHF22N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    sihf22n60

    Abstract: No abstract text available
    Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single D Generation Two


    Original     		PDF SiHF22N60E 2002/95/EC O-220 11-Mar-11 sihf22n60

    SIHF22N60E-GE3

    Abstract: No abstract text available
    Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHF22N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SIHF22N60E-GE3

    Untitled

    Abstract: No abstract text available
    Text: SiHF22N65E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHF22N65E AN609, 4896m 9611m 2290m 6826m 08-Aug-14

    Untitled

    Abstract: No abstract text available
    Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single D Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHF22N60E O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHF22N60E 2002/95/EC O-220 11-Mar-11

    SIHP22N60S-E3

    Abstract: max6265 siliconix mosfet marking to-220
    Text: Preliminary SiHP22N60S, SiHF22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.19 Qg (Max.) (nC) 96 • 100 % Avalanche tested Qgs (nC) 17


    Original     		PDF SiHP22N60S SiHF22N60S O-220 O-220 SiHP22N60S-E3 SiHF22N60S-E3 18-Jul-08 max6265 siliconix mosfet marking to-220

    SiHF22N60S-E3

    Abstract: No abstract text available
    Text: SiHF22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability


    Original     		PDF SiHF22N60S O-220 2002/95/EC SiHF22N60S-E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single D Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHF22N60E O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    TO-247 FULLPAK Package

    Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 30 % Reduction in Specific On-Resistance I INNOVAT AND TEC O L OGY E Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 600 V and 650 V High-Performance MOSFETs E Series 600 V and 650 V, Super Junction N-Channel Power MOSFETs with a 30 % Reduction


    Original     		PDF enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E

    60 SMD 5050 Ultra Bright LEDs

    Abstract: MMA 0204 HV - Professional
    Text: Vishay Intertechnology, Inc. One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components To view datasheets of the products contained in the Engineer’s Toolbox, please visit www.vishay.com/ref/et1 Alternative


    Original     		PDF VMN-MS6495-1011 60 SMD 5050 Ultra Bright LEDs MMA 0204 HV - Professional