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    SISS23DN Price and Stock

    Vishay Siliconix SISS23DN-T1-GE3

    MOSFET P-CH 20V 50A PPAK 1212-8S
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    DigiKey SISS23DN-T1-GE3 Reel 9,000 3,000
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    RS SISS23DN-T1-GE3 Bulk 6,000
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    Vishay Intertechnologies SISS23DN-T1-GE3

    Trans MOSFET P-CH 20V 27A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SISS23DN-T1-GE3)
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    Avnet Americas SISS23DN-T1-GE3 Reel 20 Weeks 6,000
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    Mouser Electronics SISS23DN-T1-GE3 13,036
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    Verical SISS23DN-T1-GE3 6,000 6,000
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    SISS23DN-T1-GE3 5,940 21
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    Arrow Electronics SISS23DN-T1-GE3 6,000 20 Weeks 6,000
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    SISS23DN-T1-GE3 Cut Strips 5,940 20 Weeks 1
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    Newark SISS23DN-T1-GE3 Cut Tape 4,314 5
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    SISS23DN-T1-GE3 Reel 3,000
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    Quest Components SISS23DN-T1-GE3 308
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    SISS23DN-T1-GE3 308
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    TTI SISS23DN-T1-GE3 Reel 9,000 3,000
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    TME SISS23DN-T1-GE3 1
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    Avnet Asia SISS23DN-T1-GE3 21 Weeks 6,000
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    Chip-Germany GmbH SISS23DN-T1-GE3 43
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    Chip1Stop SISS23DN-T1-GE3 6,000
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    SISS23DN-T1-GE3 5,940
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    EBV Elektronik SISS23DN-T1-GE3 93,000 21 Weeks 3,000
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    New Advantage Corporation SISS23DN-T1-GE3 75,000 1
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    Vishay BLH SISS23DN-T1-GE3

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    Bristol Electronics SISS23DN-T1-GE3 385 5
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    Vishay Intertechnologies SISS23DN

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    Ameya Holding Limited SISS23DN 20,000
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    Vishay Intertechnologies SISS23DNT1GE3

    P-CHANNEL 20 V (D-S) MOSFET Power Field-Effect Transistor
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    ComSIT USA SISS23DNT1GE3 3,000
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    SISS23DN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SISS23DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 50A PPAK 1212-8S Original PDF

    SISS23DN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiSS23DN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		PDF SiSS23DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiSS23DN Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0045 at VGS = - 4.5 V - 50e 0.0063 at VGS = - 2.5 V - 50e 0.0115 at VGS = - 1.8 V - 50e Qg (Typ.) 93 nC • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®


    Original     		PDF SiSS23DN 1212-8S 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiSS23DN Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0045 at VGS = - 4.5 V - 50e 0.0063 at VGS = - 2.5 V - 50e 0.0115 at VGS = - 1.8 V - 50e Qg (Typ.) 93 nC • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®


    Original     		PDF SiSS23DN 1212-8S 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of


    Original     		PDF SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,


    Original     		PDF 1212-8S Si7157DP SiSS23DN Si5415AEDU com/mosfets/12-rated-on-res/ VMN-MS6912-1406