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    Samtec Inc ZSS-123-07-G-D-1140

    Conn Board Stacker HDR 46 POS 28.95mm Stack Height 2.54mm Solder ST Through Hole Bulk - Bulk (Alt: ZSS-123-07-G-D-1140)
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    Master Electronics ZSS-123-07-G-D-1140
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    Sager ZSS-123-07-G-D-1140
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    S12307 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.00200 at VGS = 10 V 50 0.00270 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		SiRA02DP SiRA02DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA14DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.00510 at VGS = 10 V 20 0.00850 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.4 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • High Power Density DC/DC


    Original     		SiRA14DP SiRA14DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUM55P06-19L Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A)d 0.019 at VGS = - 10 V - 55 0.025 at VGS = - 4.5 V - 48 Qg (Typ.) 76 • TrenchFET Power MOSFET • Material categorization: For definitions of compliance please see


    Original     		SUM55P06-19L O-263 SUM55P06-19L-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    A8483

    Abstract: No abstract text available
    Text: Si8483DB Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 e RDS(on) () (Max.) ID (A) 0.026 at VGS = - 4.5 V - 16 0.035 at VGS = - 2.5 V - 16 0.055 at VGS = - 1.8 V - 13 0.092 at VGS = - 1.5 V - 2.5 Qg (Typ.) 21 nC S • Load Switch for Smart Phones, Tablet PCs, and Mobile


    Original     		Si8483DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 A8483 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.00200 at VGS = 10 V 50 0.00270 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		SiRA02DP SiRA02DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    MOSFET, 3077

    Abstract: 3077 mosfet
    Text: New Product SiRA14DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.00510 at VGS = 10 V 20 0.00850 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.4 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • High Power Density DC/DC


    Original     		SiRA14DP SiRA14DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 MOSFET, 3077 3077 mosfet PDF

    SIS443DN

    Abstract: Si7625DN S12307
    Text: New Product SiS443DN Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () Max. ID (A) 0.0117 at VGS = - 10 V - 35d 0.0160 at VGS = - 4.5 V - 35d • TrenchFET Power MOSFET • 100% Rg and UIS Tested • Material categorization:


    Original     		SiS443DN Si7625DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 Si7625DN S12307 PDF

    375id

    Abstract: SiR872ADP mosfet 3079
    Text: SiR872ADP Vishay Siliconix N-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)g 0.0180 at VGS = 10 V 53.7 0.0230 at VGS = 7.5 V 45 VDS (V) 150 Qg (Typ.) 22.8 nC • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:


    Original     		SiR872ADP SiR872ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 375id mosfet 3079 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiSA14DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)f, g Qg (Typ.) 20 9.4 nC 0.00510 at VGS = 10 V 30 0.00850 at VGS = 4.5 V • TrenchFET Gen IV Power MOSFET • 100 % Rg and UIS Tested • Material categorization:


    Original     		SiSA14DN SiSA14DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiR872ADP Vishay Siliconix N-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)g 0.0180 at VGS = 10 V 53.7 0.0230 at VGS = 7.5 V 45 VDS (V) 150 Qg (Typ.) 22.8 nC • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:


    Original     		SiR872ADP SiR872ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiSA14DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)f, g Qg (Typ.) 20 9.4 nC 0.00510 at VGS = 10 V 30 0.00850 at VGS = 4.5 V • TrenchFET Gen IV Power MOSFET • 100 % Rg and UIS Tested • Material categorization:


    Original     		SiSA14DN SiSA14DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiR872ADP Vishay Siliconix N-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)g 0.0180 at VGS = 10 V 53.7 0.0230 at VGS = 7.5 V 45 VDS (V) 150 Qg (Typ.) 22.8 nC • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:


    Original     		SiR872ADP SiR872ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUM110P08-11L Vishay Siliconix P-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 b RDS(on) () ID (A) 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 Qg (Typ) 85 nC • TrenchFET Power MOSFET • Material categorization: For definitions of compliance please see


    Original     		SUM110P08-11L O-263 SUM110P08-11L-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SUM110P08-11L rev

    Abstract: No abstract text available
    Text: SUM110P08-11L Vishay Siliconix P-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 b RDS(on) () ID (A) 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 Qg (Typ) 85 nC • TrenchFET Power MOSFET • Material categorization: For definitions of compliance please see


    Original     		SUM110P08-11L O-263 SUM110P08-11L-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SUM110P08-11L rev PDF