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    SI4874DY Price and Stock

    Vishay Intertechnologies SI4874DY

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    Bristol Electronics SI4874DY 29
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    Quest Components SI4874DY 76
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    Vishay Siliconix SI4874DY

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    Bristol Electronics SI4874DY 242
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    SI4874DY 20 3
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    Quest Components SI4874DY 16
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    Fairchild Semiconductor Corporation SI4874DY

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    Bristol Electronics SI4874DY 2,500 3
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    Quest Components SI4874DY 2,000
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    Vishay Siliconix SI4874DY-T1

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    Bristol Electronics SI4874DY-T1 2,260
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    Quest Components SI4874DY-T1 1,239
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    Vishay Intertechnologies SI4874DY-T1

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    Bristol Electronics SI4874DY-T1 3,514
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    Quest Components SI4874DY-T1 2,811
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    SI4874DY-T1 400
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    SI4874DY-T1 1,392
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    Find more SI4874DY price and stock on Findchips.com

    SI4874DY Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI4874DY Fairchild Semiconductor Single N-Channel, Logic Level, PowerTrench MOSFET Original PDF
    SI4874DY Unknown N-Channel Reduced Qg , Fast Switching MOSFET Original PDF
    SI4874DY Vishay Intertechnology N-Channel Reduced Qg, Fast Switching MOSFET Original PDF
    Si4874DY Vishay Telefunken N-Channel 30-V MOSFET Original PDF
    Si4874DY SPICE Device Model Vishay N-Channel Reduced Qg, Fast Switching MOSFET Original PDF
    SI4874DY-T1 Vishay Intertechnology N-Channel Reduced Qg, Fast Switching MOSFET Original PDF

    SI4874DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SI4874BDY

    Abstract: Si4874BDY-T1-E3 Si4874DY Si4874DY-T1 V4140
    Text: Specification Comparison Vishay Siliconix Si4874BDY vs. Si4874DY Description: Package: Pin Out: N-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4874BDY-T1-E3 Replaces Si4874DY-T1-E3 Si4874BDY-T1-E3 Replaces Si4874DY-T1 Summary of Performance:


    Original     		PDF Si4874BDY Si4874DY Si4874BDY-T1-E3 Si4874DY-T1-E3 Si4874DY-T1 V4140

    Si4874DY

    Abstract: No abstract text available
    Text: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si4874DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS


    Original     		PDF Si4874DY 18-Jul-08

    Si4874DY

    Abstract: No abstract text available
    Text: Si4874DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V "15 0.010 @ VGS = 4.5 V "13 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4874DY 18-Jul-08

    Si4874DY

    Abstract: s9904
    Text: Si4874DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V "15 0.010 @ VGS = 4.5 V "13 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4874DY S99-040--Rev. 04-Oct-99 s9904

    Si4874DY

    Abstract: 71469
    Text: SPICE Device Model Si4874DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4874DY 17-Apr-01 71469

    Si4874BDY

    Abstract: Si4874BDY-T1-E3 Si4874DY Si4874DY-T1
    Text: Specification Comparison Vishay Siliconix Si4874BDY vs. Si4874DY Description: N-Channel, 30 V D-S MOSFET Package: SO-8 Pin Out: Identical Part Number Replacements: Si4874BDY-T1-E3 Replaces Si4874DY-T1-E3 Si4874BDY-T1 Replaces Si4874DY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si4874BDY Si4874DY Si4874BDY-T1-E3 Si4874DY-T1-E3 Si4874BDY-T1 Si4874DY-T1

    Si4874DY

    Abstract: SOIC-16
    Text: January 2001 Si4874DY Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF Si4874DY SOIC-16

    SI4874DY

    Abstract: No abstract text available
    Text: SPICE Device Model SI4874DY N-Channel Reduced Qg, Fast Switching MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model Sub-circuit • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range


    Original     		PDF SI4874DY DMOS12 SI4874DY

    Untitled

    Abstract: No abstract text available
    Text: January 2001 Si4874DY Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF Si4874DY OT-23

    Untitled

    Abstract: No abstract text available
    Text: Si4874DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V "15 0.010 @ VGS = 4.5 V "13 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4874DY S99-040--Rev. 04-Oct-99

    Untitled

    Abstract: No abstract text available
    Text: Si4874DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V "15 0.010 @ VGS = 4.5 V "13 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4874DY S-61803--Rev. 21-Jun-99

    Untitled

    Abstract: No abstract text available
    Text: Si4874DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V "15 0.010 @ VGS = 4.5 V "13 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4874DY 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si7456DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 9.3 0.028 at VGS = 6.0 V 8.8 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V, Full-/Half-Bridge DC/DC


    Original     		PDF Si7456DP Si7456DP-T1-E3 Si7456DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 6.7 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V DC/DC • Industrial and 42 V Automotive


    Original     		PDF Si7846DP Si7846DP-T1-E3 Si7846DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7463ADP Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () Max. ID (A) 0.0100 at VGS = - 10 V - 46 0.0135 at VGS = - 4.5 V - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7463ADP 2002/95/EC Si7463ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA00DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00100 at VGS = 10 V 60 0.00135 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 66 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification


    Original     		PDF SiRA00DP 2002/95/EC SiRA00DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original     		PDF SiR698DP 2002/95/EC SiR698DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SiR460D

    Abstract: SiR460DP siR460
    Text: New Product SiR460DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0047 at VGS = 10 V 40g 0.0061 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 16.8 nC • • • • Halogen-free According to IEC 61249-2-21 TrenchFET Gen III Power MOSFET


    Original     		PDF SiR460DP SiR460DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SiR460D siR460

    SI7288

    Abstract: No abstract text available
    Text: New Product Si7288DP Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.019 at VGS = 10 V 20 0.022 at VGS = 4.5 V 19 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		PDF Si7288DP 2002/95/EC Si7288DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI7288

    SIR662

    Abstract: No abstract text available
    Text: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0027 at VGS = 10 V 60 0.0035 at VGS = 4.5 V 60 VDS (V) 60 Qg (Typ.) 30 nC PowerPAK SO-8 D S 6.15 mm S 2 S 3 G 4 G D 8 D 7 D 6 D 5 Bottom View


    Original     		PDF SiR662DP 2002/95/EC SiR662DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SIR662

    SiR826DP

    Abstract: No abstract text available
    Text: New Product SiR826DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0048 at VGS = 10 V 60 0.0052 at VGS = 7.5 V 60 0.0065 at VGS = 4.5 V 60 VDS (V) 80 Qg (Typ.) 27.9 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR826DP 2002/95/EC SiR826DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si7336ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) 0.0030 at VGS = 10 V 30 0.0040 at VGS = 4.5 V 27 VDS (V) 30 Qg (Typ.) 36 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Low-Side DC/DC Conversion - Notebook - Server


    Original     		PDF Si7336ADP Si7336ADP-T1-E3 Si7336ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI7997Dp

    Abstract: No abstract text available
    Text: New Product Si7997DP Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () - 30 0.0055 at VGS = - 10 V - 60 0.0078 at VGS = - 4.5 V - 60 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7997DP 2002/95/EC Si7997DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    sir158

    Abstract: No abstract text available
    Text: New Product SiR158DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60g 0.0023 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 41.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR158DP SiR158DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sir158