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    SIR158 Price and Stock

    Vishay Siliconix SIR158DP-T1-GE3

    MOSFET N-CH 30V 60A PPAK SO-8
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    DigiKey SIR158DP-T1-GE3 Cut Tape 8,909 1
    • 1 $2.62
    • 10 $1.692
    • 100 $2.62
    • 1000 $0.85962
    • 10000 $0.85962
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    SIR158DP-T1-GE3 Digi-Reel 8,909 1
    • 1 $2.62
    • 10 $1.692
    • 100 $2.62
    • 1000 $0.85962
    • 10000 $0.85962
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    SIR158DP-T1-GE3 Reel 6,000 3,000
    • 1 -
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    • 10000 $0.7625
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    Vishay Siliconix SIR158DP-T1-RE3

    MOSFET N-CH 30V 60A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIR158DP-T1-RE3 Cut Tape 1,854 1
    • 1 $2.52
    • 10 $1.622
    • 100 $2.52
    • 1000 $0.82014
    • 10000 $0.82014
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    SIR158DP-T1-RE3 Digi-Reel 1,854 1
    • 1 $2.52
    • 10 $1.622
    • 100 $2.52
    • 1000 $0.82014
    • 10000 $0.82014
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    SIR158DP-T1-RE3 Reel 3,000
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    • 10000 $0.72138
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    Vishay Intertechnologies SIR158DP-T1-RE3

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIR158DP-T1-RE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIR158DP-T1-RE3 Reel 18 Weeks 3,000
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    • 10000 $0.70984
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    Mouser Electronics SIR158DP-T1-RE3 2,420
    • 1 $2.22
    • 10 $1.52
    • 100 $1.06
    • 1000 $0.79
    • 10000 $0.721
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    Newark SIR158DP-T1-RE3 Cut Tape 2,528 1
    • 1 $2.35
    • 10 $2.35
    • 100 $1.6
    • 1000 $0.961
    • 10000 $0.929
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    SIR158DP-T1-RE3 Reel 3,000
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    • 10000 $0.739
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    TTI SIR158DP-T1-RE3 Reel 3,000 3,000
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    • 10000 $0.721
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    TME SIR158DP-T1-RE3 3,000
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    • 10000 $1.44
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    EBV Elektronik SIR158DP-T1-RE3 19 Weeks 3,000
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    Vishay Intertechnologies SIR158DP-T1-GE3

    Trans MOSFET N-CH 30V 40A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR158DP-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIR158DP-T1-GE3 Reel 8 Weeks 3,000
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    • 10000 $0.7503
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    Mouser Electronics SIR158DP-T1-GE3 10,246
    • 1 $2.49
    • 10 $1.67
    • 100 $1.16
    • 1000 $0.844
    • 10000 $0.76
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    Newark SIR158DP-T1-GE3 Cut Tape 6,331 1
    • 1 $2.25
    • 10 $1.74
    • 100 $1.27
    • 1000 $1.27
    • 10000 $1.27
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    SIR158DP-T1-GE3 Reel 3,000
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    • 10000 $0.781
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    Bristol Electronics SIR158DP-T1-GE3 1,750
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    SIR158DP-T1-GE3 580
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    Quest Components SIR158DP-T1-GE3 1,400
    • 1 $2.5536
    • 10 $2.5536
    • 100 $2.5536
    • 1000 $0.9576
    • 10000 $0.9576
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    SIR158DP-T1-GE3 464
    • 1 $2.128
    • 10 $2.128
    • 100 $2.128
    • 1000 $0.9842
    • 10000 $0.9842
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    TTI SIR158DP-T1-GE3 Reel 12,000 3,000
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    • 1000 -
    • 10000 $0.75
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    TME SIR158DP-T1-GE3 3,000
    • 1 -
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    • 1000 -
    • 10000 $1.19
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    Component Electronics, Inc SIR158DP-T1-GE3 1,900
    • 1 $9.23
    • 10 $9.23
    • 100 $6.92
    • 1000 $6
    • 10000 $6
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    EBV Elektronik SIR158DP-T1-GE3 9 Weeks 3,000
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    Vishay Intertechnologies SIR158DPT1GE3

    N-CHANNEL 30-V (D-S) MOSFET Power Field-Effect Transistor, 40A I(D), 30V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SIR158DPT1GE3 3,000
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    SIR158 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIR158DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 60A 8-SOIC Original PDF
    SIR158DP-T1-RE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 60A POWERPAKSO-8 Original PDF

    SIR158 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    sir158

    Abstract: No abstract text available
    Text: New Product SiR158DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60g 0.0023 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 41.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


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    SiR158DP SiR158DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sir158 PDF

    SiR158DP

    Abstract: SiR158DP-T1-GE3
    Text: New Product SiR158DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60g 0.0023 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 41.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


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    SiR158DP SiR158DP-T1-GE3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR158DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60g 0.0023 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 41.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


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    SiR158DP SiR158DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR158DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    SiR158DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR158DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60g 0.0023 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 41.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original
    SiR158DP SiR158DP-T1-GE3 11-Mar-11 PDF

    sir158

    Abstract: U 1560 AN609 SiR158DP
    Text: SiR158DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


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    SiR158DP AN609, 06-Feb-09 sir158 U 1560 AN609 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiR158DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) a, g 0.00180 at VGS = 10 V 60 g 0.00230 at VGS = 4.5 V 60 g Qg (TYP.) 41.5 nC D 5 D 6 D 8 APPLICATIONS 6. 15 m m 1 5 5.1 mm Top View


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    SiR158DP SiR158DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    sir158

    Abstract: SiR158DP
    Text: SPICE Device Model SiR158DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55°C to 125 °C Temperature Range


    Original
    SiR158DP 18-Jul-08 sir158 PDF

    sir158

    Abstract: No abstract text available
    Text: SiR158DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) a, g 0.00180 at VGS = 10 V 60 g 0.00230 at VGS = 4.5 V 60 g Qg (TYP.) 41.5 nC D 5 D 6 D 8 APPLICATIONS 6. 15 m m 1 5 5.1 mm Top View


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    SiR158DP SiR158DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 sir158 PDF

    LTC42281

    Abstract: No abstract text available
    Text: LTC4228-1/LTC4228-2 Dual Ideal Diode and Hot Swap Controller Features Description Power Path and Inrush Current Control for Redundant Supplies n Low Loss Replacement for Power Schottky Diodes n Protects Output Voltage from Input Brownouts n Allows Safe Hot Swapping from a Live Backplane


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    LTC4228-1/LTC4228-2 LTC4228-1: LTC4228-2: 28-Lead dioOP-16 DFN-16 MSOP-10 DFN-10 GN-24 QFN-24 LTC42281 PDF

    Untitled

    Abstract: No abstract text available
    Text: LTC4229 Ideal Diode and Hot Swap Controller Features Description Ideal Diode and Inrush Current Control for Redundant Supplies n Low Loss Replacement for Power Schottky Diode n Protects Output Voltage from Input Brownouts n Allows Safe Hot Swapping from a Live Backplane


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    LTC4229 24-Lead MSOP-16 DFN-16 LTC4353 LTC4355 SO-16, DFN-14 MSOP-16 LTC4357 PDF

    Untitled

    Abstract: No abstract text available
    Text: LTC4225-1/LTC4225-2 Dual Ideal Diode and Hot Swap Controller FEATURES n n n n n n n n n n n n n n DESCRIPTION Power Path and Inrush Current Control for Redundant Supplies Low Loss Replacement for Power Schottky Diodes Allows Safe Hot Swapping from a Live Backplane


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    LTC4225-1/LTC4225-2 LTC4225-1: LTC4225-2: 24-Lead SSOP-36 QFN-32 SSOP-16 DFN-16 MSOP-10 DFN-10 PDF

    sir158

    Abstract: q113 SiZ340DT SiR158DP N3X3
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - High- and Low-Side MOSFETs in One Compact Package AND TEC I INNOVAT O L OGY PowerPAIR N HN POWER MOSFETs O 19 62-2012 Co-Packaged MOSFETs Reduce Space, Increase Performance Over Two Discretes KEY BENEFITS


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    SiZ790DT SiZ914DT VMN-PT0182-1209 sir158 q113 SiZ340DT SiR158DP N3X3 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


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    Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    SPICE models

    Abstract: pspice model sir158 orcad SiR158DP ORCAD BOOK "Power MOSFETs" pspice SiR158DP-P SiR158DB
    Text: VISHAY SILICONIX Power MOSFETs Application Note 838 Using P-SPICE Models for Vishay Siliconix Power MOSFETs By Kandarp Pandya Introduction Vishay provides P-SPICE models for each of its power MOSFETs on the Vishay Web site, allowing design engineers to evaluate device performance at any stage of


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    SiR158DP 02-Jun-09 SPICE models pspice model sir158 orcad ORCAD BOOK "Power MOSFETs" pspice SiR158DP-P SiR158DB PDF

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


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    Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 PDF

    TDC 310 NTC thermistor

    Abstract: TDC 310 NTC TDC 210 NTC TDC 310 thermistor MAX17511 1/TDC 310 NTC thermistor GFX 2AA IMVP7 Ps3 MOTHERBOARD CIRCUIT diagram
    Text: 19-5742; Rev 1; 7/11 TION KIT EVALUA BLE AVAILA Dual-Output, 3-/2-/1-Phase + 2-/1-Phase Quick-PWM Controllers for VR12/IMVP7 Features The MAX17411/MAX17511/MAX17511C/MAX17511N/ MAX17511T are dual-output, step-down, constant on-time Quick-PWMK controllers for VR12/IMVP-7 CPU core supplies. The controllers consist of two high-current switching


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    VR12/IMVP7 MAX17411/MAX17511/MAX17511C/MAX17511N/ MAX17511T VR12/IMVP-7 MAX17411 MAX17511/MAX17511C/MAX17511N/MAX17511T MAX17411/MAX17511/ MAX17511C/MAX17511N/MAX17511T TDC 310 NTC thermistor TDC 310 NTC TDC 210 NTC TDC 310 thermistor MAX17511 1/TDC 310 NTC thermistor GFX 2AA IMVP7 Ps3 MOTHERBOARD CIRCUIT diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: DEMO MANUAL DC1899A LTC4228-1/LTC4228-2 Dual Ideal Diode and Hot Swap Controller DESCRIPTION Demonstration circuit 1899A controls two independent power rail circuits each with Hot Swap and ideal diode functionality provided by the LTC4228-1/LTC4228-2 dual


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    DC1899A LTC4228-1/LTC4228-2 LTC4228-1/LTC4228-2 DC1899A LTC4228 dc1899af PDF

    LTC4225UFD

    Abstract: LTC4225-1 SMAJ7A LTC4225 LTC4225-2 LTC4225C LTC4225I SBG1025L Si7336ADP sir468
    Text: LTC4225-1/LTC4225-2 Dual Ideal Diode and Hot Swap Controller Features Description Power Path and Inrush Current Control for Redundant Supplies n Low Loss Replacement for Power Schottky Diodes n Allows Safe Hot Swapping from a Live Backplane n 2.9V to 18V Operating Range


    Original
    LTC4225-1/LTC4225-2 LTC4225-1: LTC4225-2: 24-Lead SSOP-36 QFN-32 SSOP-16 DFN-16 MSOP-10 DFN-10 LTC4225UFD LTC4225-1 SMAJ7A LTC4225 LTC4225-2 LTC4225C LTC4225I SBG1025L Si7336ADP sir468 PDF