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    SIR460D Price and Stock

    Vishay Siliconix SIR460DP-T1-GE3

    MOSFET N-CH 30V 40A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIR460DP-T1-GE3 Cut Tape 95 1
    • 1 $1.13
    • 10 $0.927
    • 100 $0.7211
    • 1000 $0.49793
    • 10000 $0.49793
    		Buy Now
    SIR460DP-T1-GE3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.42582
    		Buy Now
    SIR460DP-T1-GE3 Digi-Reel 1
    • 1 $1.13
    • 10 $0.927
    • 100 $0.7211
    • 1000 $0.49793
    • 10000 $0.49793
    		Buy Now

    Vishay Intertechnologies SIR460DP-T1-GE3

    Trans MOSFET N-CH 30V 24.3A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR460DP-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIR460DP-T1-GE3 Reel 16 Weeks 3,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.55925
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    Mouser Electronics SIR460DP-T1-GE3 581
    • 1 $1.13
    • 10 $0.927
    • 100 $0.722
    • 1000 $0.498
    • 10000 $0.486
    		Buy Now
    Bristol Electronics SIR460DP-T1-GE3 93,910
    • 1 -
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    • 10000 -
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    Quest Components SIR460DP-T1-GE3 75,128
    • 1 $1.703
    • 10 $1.703
    • 100 $1.703
    • 1000 $1.703
    • 10000 $0.5109
    		Buy Now
    SIR460DP-T1-GE3 1,648
    • 1 $2.5
    • 10 $2.5
    • 100 $2.5
    • 1000 $0.875
    • 10000 $0.875
    		Buy Now
    TTI SIR460DP-T1-GE3 Reel 3,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.455
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    TME SIR460DP-T1-GE3 3,000
    • 1 -
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    • 1000 -
    • 10000 $0.73
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    SIR460D Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIR460DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A PPAK 8SOIC Original PDF

    SIR460D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SiR460D

    Abstract: SiR460DP siR460
    Text: New Product SiR460DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0047 at VGS = 10 V 40g 0.0061 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 16.8 nC • • • • Halogen-free According to IEC 61249-2-21 TrenchFET Gen III Power MOSFET


    Original     		PDF SiR460DP SiR460DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SiR460D siR460

    SIR460DP-T1-GE3

    Abstract: No abstract text available
    Text: New Product SiR460DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0047 at VGS = 10 V 40g 0.0061 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 16.8 nC • • • • Halogen-free According to IEC 61249-2-21 TrenchFET Gen III Power MOSFET


    Original     		PDF SiR460DP SiR460DP-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR460DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original     		PDF SiR460DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR460DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0047 at VGS = 10 V 40g 0.0061 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 16.8 nC • • • • Halogen-free According to IEC 61249-2-21 TrenchFET Gen III Power MOSFET


    Original     		PDF SiR460DP SiR460DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IGSS

    Abstract: SIR460DP-T1-GE3
    Text: New Product SiR460DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0047 at VGS = 10 V 40g 0.0061 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 16.8 nC • • • • Halogen-free According to IEC 61249-2-21 TrenchFET Gen III Power MOSFET


    Original     		PDF SiR460DP SiR460DP-T1-GE3 11-Mar-11 IGSS

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR460DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0047 at VGS = 10 V 40g 0.0061 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 16.8 nC • • • • Halogen-free According to IEC 61249-2-21 TrenchFET Gen III Power MOSFET


    Original     		PDF SiR460DP SiR460DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR460DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0047 at VGS = 10 V 40g 0.0061 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 16.8 nC • • • • Halogen-free According to IEC 61249-2-21 TrenchFET Gen III Power MOSFET


    Original     		PDF SiR460DP SiR460DP-T1-GE3 11-Mar-11

    SiR460DP

    Abstract: No abstract text available
    Text: SPICE Device Model SiR460DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF SiR460DP 18-Jul-08

    AN609

    Abstract: No abstract text available
    Text: SiR460DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF SiR460DP AN609, 16-Dec-08 AN609

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR460DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0047 at VGS = 10 V 40g 0.0061 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 16.8 nC • • • • Halogen-free According to IEC 61249-2-21 TrenchFET Gen III Power MOSFET


    Original     		PDF SiR460DP SiR460DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    samsung r580

    Abstract: BA41-01174A marvell 88E8059 88E8059 SMSC mec1308 TPS51125 mec1308 tps51125 SCHEMATIC smd diode code MK a8 c917
    Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 8. Block Diagram and Schematic D C B A 4 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL


    Original     		PDF BA41-01174A 100nF MIC502 B4013AM423-32 MIC500 SOM4013SL-G443-C1033 samsung r580 marvell 88E8059 88E8059 SMSC mec1308 TPS51125 mec1308 tps51125 SCHEMATIC smd diode code MK a8 c917

    ASM1442

    Abstract: bd82hm55 SMSC mec1308 mec1308 Intel hm55 JLCD500 HM55 CRB smsc mec1308-nu LTST-C193TBKT-AC N11X-GE1
    Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 8. Block Diagram and Schematic D C B A 4 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL


    Original     		PDF BREMEN-15C/17C BREMEN-15C/17C BA41-xxxxxA 100nF C1114 ASM1442 bd82hm55 SMSC mec1308 mec1308 Intel hm55 JLCD500 HM55 CRB smsc mec1308-nu LTST-C193TBKT-AC N11X-GE1

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    NPCE781BA0DX

    Abstract: nuvoton NPCE781BA0DX 92HD79B1a5 92HD79B1 NPCE781 TPS51611 NPCE781B UP7534BRA8 npce781ba G7922R61U
    Text: 5 4 3 2 1 D D Berry DG15 Discrete/UMA Schematics Document Arrandale Intel PCH C C 2010-02-03 REV : A00 DY :None Installed UMA:UMA platform installed PARK:DIS PARK platform installed M96:DIS M96 platform installed VRAM_1G:VRAM 128M*16 installed Colay :Manual modify BOM


    Original     		PDF 512MB 64Mx16b C995R GPIO45 650ms NPCE781BA0DX nuvoton NPCE781BA0DX 92HD79B1a5 92HD79B1 NPCE781 TPS51611 NPCE781B UP7534BRA8 npce781ba G7922R61U

    BA41-01190A

    Abstract: mec1308 K4W1G1646E-HC12 SMSC mec1308 tps51621 marvell 88E8059 AU6336C52 20b1 diode samsung crt GC1036
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D D sheet1. Cover - 1 sheet2. Block Diagram -(2)


    Original     		PDF BA41-01190A mec1308 K4W1G1646E-HC12 SMSC mec1308 tps51621 marvell 88E8059 AU6336C52 20b1 diode samsung crt GC1036

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477

    Nuvoton NPCE781

    Abstract: NPCE781BA0DX nuvoton NPCE781BA0DX npce781 RT8209EGQW 92HD79B1a5 RS880M G5285T11U NPCE781B HP C6602
    Text: 5 4 3 2 1 Berry Discrete/UMA Schematics Document D C D AMD Danube CPU S1g4 AMD GPU Madison-LP/M96-LP M2 RS880M + SB820M C 2010-03-08 REV : A00 B B <Core Design> Size A4 Document Number 4 3 Rev 2 Sheet ai Berry AMD Discrete/UMA Date: Monday, March 08, 2010


    Original     		PDF Madison-LP/M96-LP RS880M SB820M 4HH01 BQ24745 C6806, C6807, EC7928-EC7932. TP1309. EC704 Nuvoton NPCE781 NPCE781BA0DX nuvoton NPCE781BA0DX npce781 RT8209EGQW 92HD79B1a5 RS880M G5285T11U NPCE781B HP C6602