Untitled
Abstract: No abstract text available
Text: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 6.7 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V DC/DC • Industrial and 42 V Automotive
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Si7846DP
Si7846DP-T1-E3
Si7846DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 6.7 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V DC/DC • Industrial and 42 V Automotive
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Si7846DP
Si7846DP-T1-E3
Si7846DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Si7846DP
Abstract: Si7846DP-T1
Text: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching D 100% Rg Tested PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A)
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Si7846DP
07-mm
Si7846DP-T1
S-31728--Rev.
18-Aug-03
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Untitled
Abstract: No abstract text available
Text: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 6.7 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V DC/DC • Industrial and 42 V Automotive
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Si7846DP
Si7846DP-T1-E3
Si7846DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching D 100% Rg Tested PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A)
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Si7846DP
07-mm
Si7846DP-T1
S-31728--Rev.
18-Aug-03
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MOSFET 4166
Abstract: 7447 7447 data sheet 69249 R 7447 details 4166 8449 DATA SHEET 7447 data sheet of 7447 datasheet 7447
Text: Si7846DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si7846DP
AN609
27-Jul-07
MOSFET 4166
7447
7447 data sheet
69249 R
7447 details
4166
8449
DATA SHEET 7447
data sheet of 7447
datasheet 7447
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Si7846DP
Abstract: No abstract text available
Text: Si7846DP New Product Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 150
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Si7846DP
07-mm
S-03468--Rev.
03-Apr-01
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7846DP www.vishay.com Vishay Siliconix N-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C
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Si7846DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 6.7 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile • PWM Optimized for Fast Switching
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Si7846DP
07-mm
Si7846DP-T1
Si7846DP-T1--E3
18-Jul-08
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Si7846DP
Abstract: Si7846DP-T1-E3
Text: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 6.7 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V DC/DC • Industrial and 42 V Automotive
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Si7846DP
Si7846DP-T1-E3
Si7846DP-T1-GE3
11-Mar-11
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52521
Abstract: Si7846DP
Text: SPICE Device Model Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7846DP
18-Jul-08
52521
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Si7846DP
Abstract: Si7846DP-T1-E3 0537
Text: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 6.7 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V DC/DC • Industrial and 42 V Automotive
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Si7846DP
Si7846DP-T1-E3
Si7846DP-T1-GE3
18-Jul-08
0537
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S6046
Abstract: Si7846DP Si7846DP-T1 S-60468-Rev
Text: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 6.7 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile • PWM Optimized for Fast Switching
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Si7846DP
07-mm
Si7846DP-T1
Si7846DP-T1--E3
08-Apr-05
S6046
S-60468-Rev
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Untitled
Abstract: No abstract text available
Text: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 6.7 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V DC/DC • Industrial and 42 V Automotive
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Si7846DP
Si7846DP-T1-E3
Si7846DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching D 100% Rg Tested PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A)
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Si7846DP
07-mm
Si7846DP-T1
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 6.7 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile • PWM Optimized for Fast Switching
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Si7846DP
07-mm
Si7846DP-T1
Si7846DP-T1--E3
08-Apr-05
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SLUU357
Abstract: ZVN3320F forward converter using active clamp 3M Touch Systems
Text: Using the UCC2897A-EVM User's Guide Literature Number: SLUU357 November 2009 User's Guide SLUU357 – November 2009 48-V to 3.3-V Forward Converter with Active Clamp Reset Using the UCC2897A Active Clamp Current Mode PWM Controller 1 Introduction The UCC2897A evaluation module EVM is an active clamp reset forward converter providing a 3.3-V
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UCC2897A-EVM
SLUU357
SLUU357
UCC2897A
ZVN3320F
forward converter using active clamp
3M Touch Systems
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HA400
Abstract: SI3475 pcb 200W audio amplifier XfR 3MH CMD2836 NTCG164BH103H siliconix application 1976 LM5027 3104-2-00-01-00-00-08-0 da2319
Text: National Semiconductor Application Note 1976 Terry Allinder August 19, 2009 Introduction Theory of Operation The LM5027 evaluation board is designed to provide the design engineer with a fully functional power converter based on the Active Clamp Forward topology to evaluate the
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LM5027
AN-1976
HA400
SI3475
pcb 200W audio amplifier
XfR 3MH
CMD2836
NTCG164BH103H
siliconix application 1976
3104-2-00-01-00-00-08-0
da2319
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71917
Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller
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AN607
Si9137
SSOP-28
Si9910
Si9912
Si9913
10-Oct-02
71917
level logic mosfet transistor so-8
offline switchmode
si9110
siliconix an607
AN607
AN707
SI4406DY
PowerPAK SO-8
si2301ds
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Untitled
Abstract: No abstract text available
Text: LM5034 www.ti.com SNVS347A – FEBRUARY 2005 – REVISED APRIL 2013 LM5034 High Voltage Dual Interleaved Current Mode Controller with Active Clamp Check for Samples: LM5034 FEATURES APPLICATIONS • • • • 1 2 • • • • • • • • • • •
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LM5034
SNVS347A
LM5034
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LM5034
Abstract: LM5034MTC LM5034MTCX TSSOP-20 200w power AB amplifier circuit diagram B0358
Text: LM5034 High Voltage Dual Interleaved Current Mode Controller with Active Clamp General Description Features The LM5034 dual current mode PWM controller contains all the features needed to control either two independent forward/active clamp dc/dc converters or a single high current converter comprised of two interleaved power stages.
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LM5034
LM5034
CSP-9-111S2.
LM5034MTC
LM5034MTCX
TSSOP-20
200w power AB amplifier circuit diagram
B0358
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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BS250KL-TR1-E3
Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8
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SI3865BDV-T1-E3CT-ND
SI4720CY-T1-E3CT-ND
SI6924AEDQ-T1-E3CT-ND
SI1040X-T1-E3TR-ND
SI1865DL-T1-E3TR-ND
SI1869DH-T1-E3TR-ND
SI3861BDV-T1-E3TR-ND
SI3865BDV-T1-E3TR-ND
SI4720CY-T1-E3TR-ND
SI6924AEDQ-T1-E3TR-ND
BS250KL-TR1-E3
si6435adq-t1-e3
TP0610KL
Si9435BDY-T1-e3ct
SI6467BDQ-T1-E3
SI1024X-T1-E3
SI5855DC-T1-E3
SIA411DJ-T1-E3
SUM110P06-07L-E3 D2PAK
SI1903DL-T1-E3
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FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178
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GP-20)
FSQ510 Equivalent
BTA12 6008
bta16 6008
ZIGBEE interface with AVR ATmega16
Precision triac control thermostat
thyristor t 558 f eupec
gw 5819 diode
transistor a564
A564 transistor
BSM25GP120 b2
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