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    Vishay Siliconix SIR698DP-T1-GE3

    MOSFET N-CH 100V 7.5A PPAK SO-8
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    DigiKey SIR698DP-T1-GE3 Reel 9,000 3,000
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    SIR698DP-T1-GE3 Cut Tape 715 1
    • 1 $1.26
    • 10 $1.031
    • 100 $0.8017
    • 1000 $0.55358
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    SIR698DP-T1-GE3 Digi-Reel 1
    • 1 $1.26
    • 10 $1.031
    • 100 $0.8017
    • 1000 $0.55358
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    Vishay Intertechnologies SIR698DP-T1-GE3

    Trans MOSFET N-CH 100V 3A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR698DP-T1-GE3)
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    Avnet Americas SIR698DP-T1-GE3 Reel 9 Weeks 3,000
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    SIR698DP-T1-GE3 Ammo Pack 10 Weeks, 3 Days 1
    • 1 $1.31
    • 10 $1.31
    • 100 $0.869
    • 1000 $0.799
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    Mouser Electronics SIR698DP-T1-GE3 5,585
    • 1 $1.26
    • 10 $1.03
    • 100 $0.802
    • 1000 $0.554
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    TTI SIR698DP-T1-GE3 Reel 3,000
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    TME SIR698DP-T1-GE3 3,000
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    Vishay Intertechnologies SIR698DPT1GE3

    Power Field-Effect Transistor, 7.5A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SIR698DPT1GE3 290
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    SIR698DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIR698DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 7.5A POWERPAK Original PDF

    SIR698DP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original     		PDF SiR698DP 2002/95/EC SiR698DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original     		PDF SiR698DP 2002/95/EC SiR698DP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR698DP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR698DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original     		PDF SiR698DP 2002/95/EC SiR698DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiR698DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiR698DP AN609, 9199u 5162m 2156m 0000m 4000m 5098u 0339m 1866u

    Untitled

    Abstract: No abstract text available
    Text: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original     		PDF SiR698DP 2002/95/EC SiR698DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original     		PDF SiR698DP 2002/95/EC SiR698DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    DIODE 2524

    Abstract: No abstract text available
    Text: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original     		PDF SiR698DP 2002/95/EC SiR698DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 DIODE 2524

    SIR698DP

    Abstract: No abstract text available
    Text: SPICE Device Model SiR698DP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR698DP 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: 85V Half Bridge MOSFET Drivers with 5.5V to 16V Gate Drive MIC4604 Evaluation Board General Description The MIC4604 is an 85V Half Bridge MOSFET driver. The MIC4604 features fast 39ns propagation delay times and 20ns driver rise/fall times for a 1nF capacitive load. The


    Original     		PDF MIC4604 MIC4604YM MIC4604YMT MIC4604YMT

    Untitled

    Abstract: No abstract text available
    Text: MIC4605 Evaluation Board 85V Half-Bridge MOSFET Drivers with Adaptive Dead Time and Shoot-Through Protection General Description Getting Started The MIC4605 is an 85V half-bridge MOSFET driver that features adaptive-dead-time and shoot-through protection.


    Original     		PDF MIC4605 MIC4605â

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836