EPA240D
Abstract: No abstract text available
Text: Excelics EPA240D DATA SHEET High Efficiency Heterojunction Power FET • • • • • • 410 +33dBm TYPICAL OUTPUT POWER 20.0 dB TYPICAL POWER GAIN AT 2GHz 0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION
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EPA240D
33dBm
EPA240D
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EPA040A
Abstract: No abstract text available
Text: Excelics EPA040A DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +24.5dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN AT 18GHz 0.3 X 400 MICRON RECESSED “ MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION
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EPA040A
18GHz
12GHz
EPA040A
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EFC060B
Abstract: No abstract text available
Text: Excelics EFC060B PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • • +25.0dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE
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EFC060B
12GHz
18GHz
EFC060B
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EFA040A-70
Abstract: PT 1132
Text: Excelics EFA040A-70 DATA SHEET Low Distortion GaAs Power FET 44 19 4 20 S S 70 D 40 NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +22.0dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN AT 12GHz 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION
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EFA040A-70
70mil
12GHz
18GHz
EFA040A-70
PT 1132
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EFA080A-70
Abstract: No abstract text available
Text: Excelics EFA080A-70 DATA SHEET Low Distortion GaAs Power FET 44 19 4 20 S S 70 D 40 NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +23.5dBm TYPICAL OUTPUT POWER 7.0 dB TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION
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EFA080A-70
70mil
12GHz
18GHz
EFA080A-70
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EMA501D
Abstract: IDSS-30 8582
Text: Excelics EMA501D TENTATIVE DATA SHEET 36 - 40 GHz Medium Power MMIC FEATURES • • • • • • • 36 -40 GHz BANDWIDTH +21 dBm OUTPUT POWER @1dB Gain Compression 23 dB TYPICAL POWER GAIN DUAL BIAS SUPPLY 0.3 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION
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EMA501D
EMA501D
IDSS-30
8582
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EPA060A
Abstract: 419-1 MAG EPA060AV
Text: Excelics EPA060A/EPA060AV DATA SHEET High Efficiency Heterojunction Power FET • • • • • • • +26.5dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN FOR EPA060A AND 11.5dB FOR EPA060AV AT 18GHz 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION
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EPA060A/EPA060AV
EPA060A
EPA060AV
18GHz
EPA060A
G1537
EPA060AV.
419-1 MAG
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HV200
Abstract: Si3N4
Text: HA-2640/883 Die Characteristics DIE DIMENSIONS: 93 x 68 x 19 mils ± 1 mils 2360 x 1720 x 483µm ± 25.4µm METALLIZATION: Type: Al, 1% Cu Thickness: 16kÅ ± 2kÅ GLASSIVATION: Type: Nitride Si3N4 over Silox (SiO2, 5% Phos.) Silox Thickness: 12kÅ ± 2kÅ
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HA-2640/883
HV200
ISO9000
Si3N4
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EFA480C
Abstract: No abstract text available
Text: EFA480C Low Distortion GaAs Power FET FEATURES • • • • • • 680 104 +34.0dBm TYPICAL OUTPUT POWER 18.0dB TYPICAL POWER GAIN AT 2GHz 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE
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EFA480C
EFA480C
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EPA240BV
Abstract: EPA240B
Text: EPA240B/EPA240BV High Efficiency Heterojunction Power FET FEATURES • • • • • • 960 50 +32.5dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN FOR EPA240B AND 9.5dB FOR EPA240BV AT 18GHz 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION
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EPA240B/EPA240BV
EPA240B
EPA240BV
18GHz
EPA240BV)
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EFA1200A
Abstract: No abstract text available
Text: EFA1200A Low Distortion GaAs Power FET FEATURES 1470 104 • • • • • • +37.0dBm TYPICAL OUTPUT POWER 16.0dB TYPICAL POWER GAIN AT 2GHz 0.5 X 12,000 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE
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EFA1200A
200mA
EFA1200A
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EPA060A
Abstract: EPA060AV EPA160AV
Text: EPA060A/EPA060AV High Efficiency Heterojunction Power FET FEATURES • • • • • • • +26.5dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN FOR EPA060A AND 11.5dB FOR EPA060AV AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION
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EPA060A/EPA060AV
EPA060A
EPA060AV
18GHz
EPA160AV)
EPA060A
EPA160AV
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EFC240B
Abstract: No abstract text available
Text: EFC240B Low Distortion GaAs Power FET FEATURES • • • • • • • 960 50 +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE
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EFC240B
12GHz
18GHz
EFC240B
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EFA072A
Abstract: 75Idss 0832
Text: Excelics EFA072A PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • +25.0dBm TYPICAL OUTPUT POWER 10.0dB TYPICAL POWER GAIN AT 12GHz 0.3 X 720 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE
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EFA072A
12GHz
18GHz
EFA072A
75Idss
0832
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EPA030B
Abstract: No abstract text available
Text: Excelics EPA030B PRELIMINARY DATA SHEET High Performance Heterojunction Dual-Gate FET • • • • • • • +18.0dBm TYPICAL OUTPUT POWER 19.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 300 MICRON RECESSED “MUSHROOM” DUAL GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING
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EPA030B
12GHz
EPA030B
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EPA120B-100P
Abstract: 100MIL
Text: EPA120B-100P High Efficiency Heterojunction Power FET UPDATED 01/13/2006 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +29.0dBm TYPICAL OUTPUT POWER 11.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION
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EPA120B-100P
100MIL
12GHz
18GHz
175oC
-65/175oC
EPA120B-100P
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100MIL
Abstract: EPA240D-100P AuSn eutectic
Text: EPA240D-100P High Efficiency Heterojunction Power FET UPDATED 11/14/2005 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +33 dBm TYPICAL OUTPUT POWER 20 dB TYPICAL POWER GAIN AT 2GHz 0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION
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EPA240D-100P
100MIL
120mA
620mA
EPA240D-100P
AuSn eutectic
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EPA160A
Abstract: 9018 transistor EPA160A-100P 100MIL
Text: EPA160A-100P High Efficiency Heterojunction Power FET UPDATED 02/15/2005 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +31.0dBm TYPICAL OUTPUT POWER 11.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION
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EPA160A-100P
100MIL
12GHz
18GHz
EPA160A
9018 transistor
EPA160A-100P
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EMS101-P
Abstract: No abstract text available
Text: EMS101-P DC-6GHz GaAs MMIC SPDT SWITCH UPDATED 03/31/2008 FEATURES z z z z z z z BROADBAND PERFORMANCE HIGH ISOLATION LOW INSERTION LOSS LOW DC POWER CONSUMPTION FAST SWITCHING SPEED SI3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES HIGH RELIABILITY
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EMS101-P
EMS101-P
50ohm
ELECTRIC1/2008
31dBm
-40oC
-65oC
150oC
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MA 7824
Abstract: EPA120B-100P 100MIL
Text: EPA120B-100P High Efficiency Heterojunction Power FET UPDATED 10/30/2006 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +29.0dBm TYPICAL OUTPUT POWER 11.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION
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EPA120B-100P
100MIL
12GHz
18GHz
MA 7824
EPA120B-100P
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100MIL
Abstract: GaAs FET EFA025A
Text: EFA025A-100P Low Distortion GaAs Power FET UPDATED 11/17/2006 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +21.0dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION
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EFA025A-100P
100MIL
12GHz
18GHz
GaAs FET EFA025A
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EPA120E
Abstract: s 0938
Text: Excelics EPA120E DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +29.5dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN AT 18GHz 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION
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EPA120E
18GHz
12GHz
EPA120E
s 0938
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DIODE 4005
Abstract: hpnd pin 0.01 pF HPND-4005 HPND4005 beam lead pin diode
Text: Beam Lead PIN Diode Technical Data HPND-4005 Features • High Breakdown Voltage 120 V Typical • Low Capacitance 0.017 pF Typical GOLD LEADS S1O2/Si3N4 PASSIVATION CATHODE 130 5.1 110 (4.3) 110 (4.3) 80 (3.1) 130 (5.1) 110 (4.3) • Low Resistance 4.7 Ω Typical
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HPND-4005
HPND-4005
5965-8877E
DIODE 4005
hpnd pin 0.01 pF
HPND4005
beam lead pin diode
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TGF1350
Abstract: No abstract text available
Text: Texas Instruments TGF1350 Low-Noise Microwave GaAs FET Features • 1.5-dB noise figure with 11 -dB associated gain at 10 GHz ■ 2.2-dB noise figure with 7-dB associated gain at 18 GHz ■ All-gold metallization ■ Recessed 1/2-^m gate structure ■ Si3N4 channel passivation
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TGF1350
TGF1350
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