EPA160AV
Abstract: EPA160A
Text: EPA160A/EPA160AV High Efficiency Heterojunction Power FET FEATURES • • • • • • • +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN FOR EPA160A AND 10.0dB FOR EPA160AV AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION
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EPA160A/EPA160AV
EPA160A
EPA160AV
18GHz
EPA160AV)
EPA160A
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EPA160AV
Abstract: EPA160A
Text: Excelics EPA160A/EPA160AV DATA SHEET High Efficiency Heterojunction Power FET • • • • • • • +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN FOR EPA160A AND 10.0dB FOR EPA160AV AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION
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EPA160A/EPA160AV
EPA160A
EPA160AV
18GHz
EPA160A
12GHz
EPA160AV.
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EPA080A-100P
Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.
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EPA060A
Abstract: EPA060AV EPA160AV
Text: EPA060A/EPA060AV High Efficiency Heterojunction Power FET FEATURES • • • • • • • +26.5dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN FOR EPA060A AND 11.5dB FOR EPA060AV AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION
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EPA060A/EPA060AV
EPA060A
EPA060AV
18GHz
EPA160AV)
EPA060A
EPA160AV
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