Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    EFA480C Search Results

    EFA480C Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    EFA480C Excelics Semiconductor 8-12V low distortion GaAs power FET Original PDF
    EFA480C-180F Excelics Semiconductor 8-12V low distortion GaAs power FET Original PDF
    EFA480C-CP083 Excelics Semiconductor Low Distortion GaAs Power FET Original PDF
    EFA480C-CPO83 Excelics Semiconductor Low Distortion GaAs Power FET Original PDF
    EFA480C SOT89 Excelics Semiconductor DC-4GHz, 7-12V low distortion GaAs power FET Original PDF
    EFA480C-SOT89 Unknown DC-4GHz Low Distortion GaAs Power FET Original PDF

    EFA480C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EFA480C-SOT89

    Abstract: No abstract text available
    Text: Excelics EFA480C-SOT89 DATA SHEET DC-4GHz Low Distortion GaAs Power FET Features     '5$,1 6285&     (Top View All Dimensions In Mils Applications • •  $ &# *$7( • • • LOW COST SURFACE-MOUNT PLASTIC PACKAGE


    Original     		PDF EFA480C-SOT89 48dBm EFA480C-SOT89

    EFA480C

    Abstract: No abstract text available
    Text: EFA480C Low Distortion GaAs Power FET FEATURES • • • • • • 680 104 +34.0dBm TYPICAL OUTPUT POWER 18.0dB TYPICAL POWER GAIN AT 2GHz 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE


    Original     		PDF EFA480C EFA480C

    EFA480C

    Abstract: No abstract text available
    Text: Excelics EFA480C DATA SHEET Low Distortion GaAs Power FET 680 • • • • • • +34.0dBm TYPICAL OUTPUT POWER 18.0dB TYPICAL POWER GAIN AT 2GHz 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE


    Original     		PDF EFA480C EFA480C

    EFA480C-CP083

    Abstract: No abstract text available
    Text: Excelics EFA480C-CP083 PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +33.5dBm TYPICAL OUTPUT POWER 16.0dB TYPICAL POWER GAIN AT 2GHz 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE


    Original     		PDF EFA480C-CP083 160MIL EFA480C-CP083

    EFA480C-180F

    Abstract: 180MIL
    Text: Excelics EFA480C-180F PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • NON-HERMETIC 180MIL METAL FLANGE PACKAGE +34.0dBm TYPICAL OUTPUT POWER 16.5dB TYPICAL POWER GAIN AT 2GHz 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		PDF EFA480C-180F 180MIL EFA480C-180F

    EFA480C-CP083

    Abstract: fet 721
    Text: EFA480C-CP083 Low Distortion GaAs Power FET UPDATED 12/28/2004 FEATURES • • • • • • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +33.5 dBm OUTPUT POWER AT 1dB COMPRESSION 16.0 dB GAIN AT 2 GHz 0.5x4800 MICRON RECESSED “MUSHROOM” GATE


    Original     		PDF EFA480C-CP083 160MIL 5x4800 EFA480C-CP083 fet 721

    EPA080A-100P

    Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
    Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.


    Original     		PDF

    EFA018A

    Abstract: EPA025A EPA060B-70 EFA240D-SOT89 EPA018A EPA060B EPA018 EPB018A5 CP083 EFA025A-70
    Text: 310 De Guigne Drive, Sunnyvale, CA 94085 Tel: 408-737-1711 Fax: 408-737-1868 Quick Reference Guide for 2 GHz Applications Device Type Bias A Discrete Devices: EPB018A5 EPB018A7 EPB018A9 EPB025A 2V/15mA 2V/15mA 2V/15mA 2V/15mA 15 15 15 15 0.4 0.5 0.6 0.5 20


    Original     		PDF EPB018A5 EPB018A7 EPB018A9 EPB025A V/15mA EFA018A EFA025A EFA018A EPA025A EPA060B-70 EFA240D-SOT89 EPA018A EPA060B EPA018 EPB018A5 CP083 EFA025A-70

    b1415

    Abstract: GAAS FET CROSS REFERENCE gaas fet 70 mil micro-X Package power fet 70 mil micro-X Package EPA240BV N5 micro-X Package EPA060B-70 MIXER EMA 0.5w ,GaAs FET EPA480C-SOT89
    Text: RTC/5/01/PSINTRO EXCELICS SEMICONDUCTOR, INC. PRODUCT SELECTION GUIDE Products Excelics Semiconductor, Inc. was founded in 1995 to become a world wide leading merchant supplier of high performance R.F. and microwave semiconductor discrete devices and integrated circuits ICs


    Original     		PDF RTC/5/01/PSINTRO 24-hour 200oC, 275oC b1415 GAAS FET CROSS REFERENCE gaas fet 70 mil micro-X Package power fet 70 mil micro-X Package EPA240BV N5 micro-X Package EPA060B-70 MIXER EMA 0.5w ,GaAs FET EPA480C-SOT89

    Curtice

    Abstract: EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A
    Text: Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs Curtice-Ettenburg Model Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS CRF RD RG RS RIN CGSO CGDO FC CDS CGS CGD KF4 AF TNOM XTI EG VTOTC BETATCE


    Original     		PDF EFA018A 00E-12 40E-14 00E-08 63E-13 80E-14 00E-14 EFA025A Curtice EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A

    EPA018A

    Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C
    Text: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the


    Original     		PDF EPA018A EPA025A EPA030C EPA040A EPA060A EFA480B EFA480C EFA720A EFA960B EFA1200A EPA018A EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C