EFC060B
Abstract: No abstract text available
Text: Excelics EFC060B PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • • +25.0dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE
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EFC060B
12GHz
18GHz
EFC060B
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EFC060B
Abstract: SG95
Text: EFC060B Low Distortion GaAs Power FET FEATURES 350 • • • • • • • 50 +25.0dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE
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EFC060B
12GHz
EFC060B
SG95
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EFC060B-100F
Abstract: 130gm
Text: Excelics EFC060B-100F DATA SHEET Low Distortion GaAs Power FET • • • • • • • HERMETIC 100mil CERAMIC FLANGE PACKAGE +25.0dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 600 MICRON RECESSED “MUSHROOM”
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EFC060B-100F
100mil
12GHz
EFC060B-100F
130gm
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EPA080A-100P
Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.
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