sharp mask rom
Abstract: LH53820 LH5322 lh5384
Text: SHARP CORP bGE D • 000^435 40 e! f l l f l ü ? » S R P J T - H é - o - jS SHARP LH5316400D ■ M Description The LH5316400D is a 16M bit CMOS mask ROM organized as 2,0 97 ,1 5 2 x8 bits. It is packaged in 36-pin DIP which provides mask ROM specific pinout compatible with 28-pin 1 M mask ROM.
|
OCR Scan
|
LH5316400D
LH5316400D
36-pin
28-pin
150ns
LH538400A
LH538200
16M--
LH5316400
sharp mask rom
LH53820
LH5322
lh5384
|
PDF
|
MB8316200
Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
Text: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S
|
OCR Scan
|
23C4000C
23C4100C
23C4200C
23V4000C
KM23V41
KM23V41OOCET
UPD23C4001EB
UPD23C4000S
HN62344B
HN62444
MB8316200
uPD23C4000S
TC533200
UPD23C4000
23C32000a
624116
HN62318/338B
|
PDF
|
cey marking code
Abstract: 816P
Text: SHARP L H 5 3 1 6 P 0 ODD C O N T E N T S 1. General Description P2 2. Features P2 3. Block Diagraa P3 4. Pin Connections P4 5. Pin Description P4 6. Absolute ïaiinna Ratings PS 7. Opwatine Sanges P5 S. B.C. Electrical Characteristics P5 9. À.C. Electrical Characteristics
|
OCR Scan
|
LH6316POODD
LH53TNxx
CLH5315PQ0DD)
16-bit
001713fl
LH5S16
54TYP.
24TTP.
DIP42-Ã
616D7T6
cey marking code
816P
|
PDF
|
LH531000
Abstract: KS-86C004 sharp mask rom
Text: \. .y . SHARP CORPORATION NO. KS-86C004 TECHNICAL LITERATURE FOR CMOS 1M Mask ROM MODEL n o . L H 5 3 1 Q 0 Q DATE_ J a n u a r y 31 , 1986 * This technical li t e r a t u r e i s subject to change without n o tice . * S H A R P I N T E G R A T E D
|
OCR Scan
|
KS-86C004
LH531000
LH531000
250ns
250ns)
KS-86C004
sharp mask rom
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SHARP SPEC No. E L 0 8 6 1 0 0 I S S UE: Jun. 1 1996 To ; S P E C I F I C A T I O N S p ro d u ct Type 1 6M MASK ROM LH537Nxx I o d e l No._ L H 5 3 1 6 P 0 ODN JKThis specifications contains 14 pages including the cover acid appendix If you have any objections, please contact us before issuing purchasing order.
|
OCR Scan
|
LH537Nxx
LHS316P00DN
SGP44-P-600
M1050
K01SS
CY648
|
PDF
|
LH537
Abstract: NAE03
Text: SHARP SPEC No. E L 0 8 6 1 0 0 I S S UE: Jun. 1 1996 To ; S P E C I F I C A T I O N S p ro d u ct Type 1 6M MASK ROM LH537Nxx I o d e l No._ L H 5 3 1 6 P 0 ODN JKThis specifications contains 14 pages including the cover acid appendix If you have any objections, please contact us before issuing purchasing order.
|
OCR Scan
|
LH537Nxx
LHS316P00DN
SGP44-P-600
M1050
K01SS
CY648
LH537
NAE03
|
PDF
|
40-pin EPROM pinout
Abstract: ta 1275 az
Text: LH531024 FEATURES • 65,536 words x 16 bit organization CMOS 1M 64K x 16 M a sk-P ro g ra m m a b le ROM PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TO P VIEW • Access time: 100 ns (MAX.) / NC C • Power consumption: Operating: 412.5 mW (MAX.) Standby: 550 |j.W (MAX.)
|
OCR Scan
|
LH531024
40-pin,
600-mil
525-mil
44-pin,
650-mil
40-PIN
40-pin EPROM pinout
ta 1275 az
|
PDF
|
531024
Abstract: 40-pin EPROM pinout
Text: LH531024 FEATURES • 65,536 words x 16 bit organization C M O S 1M 64K x 16 MROM PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TOP VIEW • Access time: 100 ns (MAX.) s NC • Power consumption: Operating: 412.5 mW (MAX.) Standby: 550 jiW (MAX.) CË • Static operation
|
OCR Scan
|
LH531024
40-PIN
40-pin,
600-mil
525-mil
44-pin,
650-mil
LH531024
531024
40-pin EPROM pinout
|
PDF
|
sharp mask rom
Abstract: DIP028-P-0600
Text: CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization • Access time: 150 ns (MAX.) The LH531000B is a m ask-program mable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology.
|
OCR Scan
|
28-PIN
LH531000B
28-pin,
600-mil
450-mil
LH531000B
sharp mask rom
DIP028-P-0600
|
PDF
|
531000B
Abstract: 531000
Text: CMOS 1 M 128K x 8 MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.) • Low power consumption:
|
OCR Scan
|
28-pin,
600-mil
450-mil
LH531000B
28-PIN
450-rnil
LH531000B
531000B
531000
|
PDF
|
sharp mask rom
Abstract: No abstract text available
Text: CMOS 1 M 128 K x 8 MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B is a m ask-program m able ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.) • Low power consumption:
|
OCR Scan
|
LH531000B
28-PIN
28-pin,
600-mil
450-mil
LH531000B
sharp mask rom
|
PDF
|
Untitled
Abstract: No abstract text available
Text: L H 5 3 1 B - S CMOS 1M 128K x 8 3 V-Prive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 500 ns (MAX.)
|
OCR Scan
|
LH531000B-S
28-pin,
450-mil
OP028-P-0450)
LH531000BN-S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LH531000B-S CMOS 1M 128K x 8 3 V-Drive Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology.
|
OCR Scan
|
LH531000B-S
28-pin,
450-mil
LH531000B-S
28-PIN
OP028-P-0450)
|
PDF
|
IC 2030 PIN CONNECTIONS
Abstract: No abstract text available
Text: LH531VOO FEATURES • 131,072 words x 8 bit organization • Access time: 100 ns MAX. CMOS 1M (128K x 8) Mask-Programmable ROM PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TO P VIEW s O E ^ Ö li/ D C C • Power consumption: Operating: 275 mW (MAX.) Standby: 550 (iW (MAX.)
|
OCR Scan
|
LH531VOO
32-pin,
600-mil
525-mil
32-PIN
LH531V00
IC 2030 PIN CONNECTIONS
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: LH5316500C FEATURES CMOS 16M 2M x 8/1M x 16 Mask-Programmable ROM PIN CONNECTIONS • 2,097,152 x 8 bit organization (Byte mode) 1,048,576 x 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 275 mW (MAX.) Standby: 550 nW (MAX.)
|
OCR Scan
|
LH5316500C
42-pin,
600-mil
44-pin,
48-pin,
42-PIN
LH5316500C
|
PDF
|
sharp lh531
Abstract: sharp mask rom
Text: CMOS 1M 128K FEATURES • 131,072 x 8 bit organization • Access time: 150 ns (MAX. • Low power consumption: Operating: 192.5 mW (MAX.) x 8) Mask Programmable ROM DESCRIPTION The LH531000B is a mask programmable ROM organized as 131,072 x 8 bits. It is fabricated using
|
OCR Scan
|
LH531000B
28-pin,
600-mil
450-mil
44-pin,
44-PIN
28-PIN
31000A-6
sharp lh531
sharp mask rom
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LH531024 FEATURES • 65,536 words x 16 bit organization CMOS 1M 64K x 16 MROM PIN CONNECTIONS 4 0 -P IN D IP T O P V IE W 4 0 -P IN S O P • Access time: 100 ns (MAX.) - S NC C • Power consumption: Operating: 412.5 mW (MAX.) Standby: 550 (iW (MAX.)
|
OCR Scan
|
LH531024
40-pin,
600-mil
525-mil
44-pin,
650-mil
|
PDF
|
LH5316000
Abstract: lh53 64pin
Text: CMOS 16M 2M x 8 / 1M x 16 Mask-Programmable ROM LH 5316000 FEATURES • 2,097,152 x 8 bit organization (Byte mode) 1,048,576 x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access time: 200 ns (MAX.) DESCRIPTION The LH5316000 is a mask-programmable ROM
|
OCR Scan
|
LH5316000
64-PIN
LH5316000
64-pin,
750-mil
SDIP64-P-750)
QFP64-P-1420)
LH5316000D-20
lh53 64pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LH531000B-S CMOS 1M 128K x 8 3 V-Drive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 500 ns (MAX.)
|
OCR Scan
|
LH531000B-S
28-pin,
450-mil
LH531000B-S
28-PIN
OP028-P-0450)
|
PDF
|
431 capacitor NCC
Abstract: No abstract text available
Text: LH531000B CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 1 31,072 x 8 bit organization The LH531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (M AX.)
|
OCR Scan
|
LH531000B
LH531000B
28-pin,
600-m
450-m
44-pin,
28-PIN
600-mil
431 capacitor NCC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY LH5316501 C M O S 16M 2M x 8 / 1M x 16 M a s k -P ro g ra m m a b le ROM FEATURES • 2,097,152 x 8 bit organization (Byte mode) 1,048,576 x 16 bit organization • TTL compatible I/O • Three-state outputs • Single +5 V power supply • Packages:
|
OCR Scan
|
LH5316501
42-pin,
600-mil
44-pin,
LH5316501
16M-bit
|
PDF
|
D416C
Abstract: dsc d-13
Text: LH5316500A FEATURES • 2 ,0 9 7 ,1 5 2 x 8 bit organization Byte mode 1 ,048,576 x 16 bit organization (Word mode) • • Access time: 150 ns (M AX.) Power consumption: Operating: 2 7 5 m W (M AX.) Standby: 550 jiW (M AX.) • Fully-static operation •
|
OCR Scan
|
LH5316500A
42-pin,
600-m
44-pin,
48-pin,
42-PIN
LH5316500A
600-mil
D416C
dsc d-13
|
PDF
|
Untitled
Abstract: No abstract text available
Text: L H 5 3 1 B - S CMOS 1M 128K x 8 3 V-Drive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Power consumption:
|
OCR Scan
|
LH531000B-S
28-pin,
450-mil
28-PIN
I000B
OP028-P-0450)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LH5316500C FEATUR ES • 2,097,152 words Byte mode 1,048,576 words (Word mode) C M O S 16M (2M x 8/1M x 16) M a sk -P ro g ra m m a b le R O M PIN CONNECTIONS x 8 bit organization 42-PIN DIP x 16 bit organization • Access time: 150 ns (MAX.) TOP VIEW s
|
OCR Scan
|
LH5316500C
42-PIN
42-pin,
600-mil
44-pin,
LH5316500C
16M-bit
42DIP
|
PDF
|