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    sharp mask rom

    Abstract: LH53820 LH5322 lh5384
    Text: SHARP CORP bGE D • 000^435 40 e! f l l f l ü ? » S R P J T - H é - o - jS SHARP LH5316400D ■ M Description The LH5316400D is a 16M bit CMOS mask ROM organized as 2,0 97 ,1 5 2 x8 bits. It is packaged in 36-pin DIP which provides mask ROM specific pinout compatible with 28-pin 1 M mask ROM.


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    PDF LH5316400D LH5316400D 36-pin 28-pin 150ns LH538400A LH538200 16M-- LH5316400 sharp mask rom LH53820 LH5322 lh5384

    MB8316200

    Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
    Text: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S


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    PDF 23C4000C 23C4100C 23C4200C 23V4000C KM23V41 KM23V41OOCET UPD23C4001EB UPD23C4000S HN62344B HN62444 MB8316200 uPD23C4000S TC533200 UPD23C4000 23C32000a 624116 HN62318/338B

    cey marking code

    Abstract: 816P
    Text: SHARP L H 5 3 1 6 P 0 ODD C O N T E N T S 1. General Description P2 2. Features P2 3. Block Diagraa P3 4. Pin Connections P4 5. Pin Description P4 6. Absolute ïaiinna Ratings PS 7. Opwatine Sanges P5 S. B.C. Electrical Characteristics P5 9. À.C. Electrical Characteristics


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    PDF LH6316POODD LH53TNxx CLH5315PQ0DD) 16-bit 001713fl LH5S16 54TYP. 24TTP. DIP42-Ã 616D7T6 cey marking code 816P

    LH531000

    Abstract: KS-86C004 sharp mask rom
    Text: \. .y . SHARP CORPORATION NO. KS-86C004 TECHNICAL LITERATURE FOR CMOS 1M Mask ROM MODEL n o . L H 5 3 1 Q 0 Q DATE_ J a n u a r y 31 , 1986 * This technical li t e r a t u r e i s subject to change without n o tice . * S H A R P I N T E G R A T E D


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    PDF KS-86C004 LH531000 LH531000 250ns 250ns) KS-86C004 sharp mask rom

    Untitled

    Abstract: No abstract text available
    Text: SHARP SPEC No. E L 0 8 6 1 0 0 I S S UE: Jun. 1 1996 To ; S P E C I F I C A T I O N S p ro d u ct Type 1 6M MASK ROM LH537Nxx I o d e l No._ L H 5 3 1 6 P 0 ODN JKThis specifications contains 14 pages including the cover acid appendix If you have any objections, please contact us before issuing purchasing order.


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    PDF LH537Nxx LHS316P00DN SGP44-P-600 M1050 K01SS CY648

    LH537

    Abstract: NAE03
    Text: SHARP SPEC No. E L 0 8 6 1 0 0 I S S UE: Jun. 1 1996 To ; S P E C I F I C A T I O N S p ro d u ct Type 1 6M MASK ROM LH537Nxx I o d e l No._ L H 5 3 1 6 P 0 ODN JKThis specifications contains 14 pages including the cover acid appendix If you have any objections, please contact us before issuing purchasing order.


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    PDF LH537Nxx LHS316P00DN SGP44-P-600 M1050 K01SS CY648 LH537 NAE03

    40-pin EPROM pinout

    Abstract: ta 1275 az
    Text: LH531024 FEATURES • 65,536 words x 16 bit organization CMOS 1M 64K x 16 M a sk-P ro g ra m m a b le ROM PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TO P VIEW • Access time: 100 ns (MAX.) / NC C • Power consumption: Operating: 412.5 mW (MAX.) Standby: 550 |j.W (MAX.)


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    PDF LH531024 40-pin, 600-mil 525-mil 44-pin, 650-mil 40-PIN 40-pin EPROM pinout ta 1275 az

    531024

    Abstract: 40-pin EPROM pinout
    Text: LH531024 FEATURES • 65,536 words x 16 bit organization C M O S 1M 64K x 16 MROM PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TOP VIEW • Access time: 100 ns (MAX.) s NC • Power consumption: Operating: 412.5 mW (MAX.) Standby: 550 jiW (MAX.) CË • Static operation


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    PDF LH531024 40-PIN 40-pin, 600-mil 525-mil 44-pin, 650-mil LH531024 531024 40-pin EPROM pinout

    sharp mask rom

    Abstract: DIP028-P-0600
    Text: CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization • Access time: 150 ns (MAX.) The LH531000B is a m ask-program mable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology.


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    PDF 28-PIN LH531000B 28-pin, 600-mil 450-mil LH531000B sharp mask rom DIP028-P-0600

    531000B

    Abstract: 531000
    Text: CMOS 1 M 128K x 8 MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.) • Low power consumption:


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    PDF 28-pin, 600-mil 450-mil LH531000B 28-PIN 450-rnil LH531000B 531000B 531000

    sharp mask rom

    Abstract: No abstract text available
    Text: CMOS 1 M 128 K x 8 MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B is a m ask-program m able ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.) • Low power consumption:


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    PDF LH531000B 28-PIN 28-pin, 600-mil 450-mil LH531000B sharp mask rom

    Untitled

    Abstract: No abstract text available
    Text: L H 5 3 1 B - S CMOS 1M 128K x 8 3 V-Prive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 500 ns (MAX.)


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    PDF LH531000B-S 28-pin, 450-mil OP028-P-0450) LH531000BN-S

    Untitled

    Abstract: No abstract text available
    Text: LH531000B-S CMOS 1M 128K x 8 3 V-Drive Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology.


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    PDF LH531000B-S 28-pin, 450-mil LH531000B-S 28-PIN OP028-P-0450)

    IC 2030 PIN CONNECTIONS

    Abstract: No abstract text available
    Text: LH531VOO FEATURES • 131,072 words x 8 bit organization • Access time: 100 ns MAX. CMOS 1M (128K x 8) Mask-Programmable ROM PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TO P VIEW s O E ^ Ö li/ D C C • Power consumption: Operating: 275 mW (MAX.) Standby: 550 (iW (MAX.)


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    PDF LH531VOO 32-pin, 600-mil 525-mil 32-PIN LH531V00 IC 2030 PIN CONNECTIONS

    Untitled

    Abstract: No abstract text available
    Text: LH5316500C FEATURES CMOS 16M 2M x 8/1M x 16 Mask-Programmable ROM PIN CONNECTIONS • 2,097,152 x 8 bit organization (Byte mode) 1,048,576 x 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 275 mW (MAX.) Standby: 550 nW (MAX.)


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    PDF LH5316500C 42-pin, 600-mil 44-pin, 48-pin, 42-PIN LH5316500C

    sharp lh531

    Abstract: sharp mask rom
    Text: CMOS 1M 128K FEATURES • 131,072 x 8 bit organization • Access time: 150 ns (MAX. • Low power consumption: Operating: 192.5 mW (MAX.) x 8) Mask Programmable ROM DESCRIPTION The LH531000B is a mask programmable ROM organized as 131,072 x 8 bits. It is fabricated using


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    PDF LH531000B 28-pin, 600-mil 450-mil 44-pin, 44-PIN 28-PIN 31000A-6 sharp lh531 sharp mask rom

    Untitled

    Abstract: No abstract text available
    Text: LH531024 FEATURES • 65,536 words x 16 bit organization CMOS 1M 64K x 16 MROM PIN CONNECTIONS 4 0 -P IN D IP T O P V IE W 4 0 -P IN S O P • Access time: 100 ns (MAX.) - S NC C • Power consumption: Operating: 412.5 mW (MAX.) Standby: 550 (iW (MAX.)


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    PDF LH531024 40-pin, 600-mil 525-mil 44-pin, 650-mil

    LH5316000

    Abstract: lh53 64pin
    Text: CMOS 16M 2M x 8 / 1M x 16 Mask-Programmable ROM LH 5316000 FEATURES • 2,097,152 x 8 bit organization (Byte mode) 1,048,576 x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access time: 200 ns (MAX.) DESCRIPTION The LH5316000 is a mask-programmable ROM


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    PDF LH5316000 64-PIN LH5316000 64-pin, 750-mil SDIP64-P-750) QFP64-P-1420) LH5316000D-20 lh53 64pin

    Untitled

    Abstract: No abstract text available
    Text: LH531000B-S CMOS 1M 128K x 8 3 V-Drive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 500 ns (MAX.)


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    PDF LH531000B-S 28-pin, 450-mil LH531000B-S 28-PIN OP028-P-0450)

    431 capacitor NCC

    Abstract: No abstract text available
    Text: LH531000B CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 1 31,072 x 8 bit organization The LH531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (M AX.)


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    PDF LH531000B LH531000B 28-pin, 600-m 450-m 44-pin, 28-PIN 600-mil 431 capacitor NCC

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY LH5316501 C M O S 16M 2M x 8 / 1M x 16 M a s k -P ro g ra m m a b le ROM FEATURES • 2,097,152 x 8 bit organization (Byte mode) 1,048,576 x 16 bit organization • TTL compatible I/O • Three-state outputs • Single +5 V power supply • Packages:


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    PDF LH5316501 42-pin, 600-mil 44-pin, LH5316501 16M-bit

    D416C

    Abstract: dsc d-13
    Text: LH5316500A FEATURES • 2 ,0 9 7 ,1 5 2 x 8 bit organization Byte mode 1 ,048,576 x 16 bit organization (Word mode) • • Access time: 150 ns (M AX.) Power consumption: Operating: 2 7 5 m W (M AX.) Standby: 550 jiW (M AX.) • Fully-static operation •


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    PDF LH5316500A 42-pin, 600-m 44-pin, 48-pin, 42-PIN LH5316500A 600-mil D416C dsc d-13

    Untitled

    Abstract: No abstract text available
    Text: L H 5 3 1 B - S CMOS 1M 128K x 8 3 V-Drive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Power consumption:


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    PDF LH531000B-S 28-pin, 450-mil 28-PIN I000B OP028-P-0450)

    Untitled

    Abstract: No abstract text available
    Text: LH5316500C FEATUR ES • 2,097,152 words Byte mode 1,048,576 words (Word mode) C M O S 16M (2M x 8/1M x 16) M a sk -P ro g ra m m a b le R O M PIN CONNECTIONS x 8 bit organization 42-PIN DIP x 16 bit organization • Access time: 150 ns (MAX.) TOP VIEW s


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    PDF LH5316500C 42-PIN 42-pin, 600-mil 44-pin, LH5316500C 16M-bit 42DIP