Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    531000 Search Results

    531000 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    DA14531-00000FX2 Renesas Electronics Corporation SmartBond™ Ultra-Low Power Bluetooth® 5.1 System-on-Chip Visit Renesas Electronics Corporation
    DA14531-00000OG2 Renesas Electronics Corporation SmartBond™ Ultra-Low Power Bluetooth® 5.1 System-on-Chip Visit Renesas Electronics Corporation
    SiT8920BM-13-33E-53.100000 SiTime 1 to 110 MHz, Wide Temperature Oscillator (-55 to +125°C) Datasheet
    SIT9367AI-2C1-25E644.531000 SiTime 220 to 725 MHz, Low Jitter Differential XO Datasheet
    SF Impression Pixel

    531000 Price and Stock

    Molex 0395310005

    TERM BLOCK HDR 5POS VERT 5.08MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 0395310005 Bulk 4,169 1
    • 1 $1.33
    • 10 $0.934
    • 100 $0.7872
    • 1000 $0.62981
    • 10000 $0.616
    		Buy Now
    Avnet Americas 0395310005 Bulk 8 Weeks 5,400
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.87718
    		Buy Now

    Mercury Electronic Ind Co Ltd 3QHTF53-100.003-OE

    100.003 MHz XO 3.3V 5.0X3.2MM OE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 3QHTF53-100.003-OE 250 5
    • 1 -
    • 10 $19.97
    • 100 $8.55
    • 1000 $7.17
    • 10000 $7.17
    		Buy Now

    Mercury Electronic Ind Co Ltd 18QHTF53-100.005-OE

    100.005 MHz XO 1.8V 5.0X3.2MM OE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 18QHTF53-100.005-OE 250 5
    • 1 -
    • 10 $19.97
    • 100 $8.55
    • 1000 $7.17
    • 10000 $7.17
    		Buy Now

    Mercury Electronic Ind Co Ltd 18QHTF53-100.050-OE

    100.05 MHz XO 1.8V 5.0X3.2 MM OE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 18QHTF53-100.050-OE 250 5
    • 1 -
    • 10 $19.97
    • 100 $8.55
    • 1000 $7.17
    • 10000 $7.17
    		Buy Now

    Mercury Electronic Ind Co Ltd 18QHTF53-100.005-PD

    100.005 MHz XO 1.8V 5.0X3.2MM PD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 18QHTF53-100.005-PD 250 5
    • 1 -
    • 10 $19.97
    • 100 $8.55
    • 1000 $7.17
    • 10000 $7.17
    		Buy Now
    Find more 531000 price and stock on Findchips.com

    531000 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    531000 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    531000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Tension spring | Spacing 5.0 mm AK3100/.-5.0-PEBBLE GREY 1- to n-poles Order Data Spacing 5.0 mm Technical Data Article Designation Article Number Solid min 0.14 mm² Material PA 6.6 2 12.20 AK3100/2-5.0-PEBBLE GREY 53100020001F 200 solid max 2.5 mm² Flammability Class


    Original     		PDF AK3100/. AK3100/2-5 53100020001F AK3100/3-5 53100030001F AK3100/4-5 53100040001F AK3100/5-5 53100050001E AK3100/6-5

    NEC D2732

    Abstract: 41C1000 41256 81c4256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732
    Text: New Page 1 DRAM ORGANIZATION/ DENSITY FUJISTU GOLDSTAR HITACHI HYNDAI MB GM HM HY 256K x 1 256K 81256 71C256 51256 MICRON MT 53C256 1256 MITSUBISHI M5M 4256 1M x 1(1M) 81C1000 71C1000 511000 531000 4C1024 41000 256K x 4(1M) 81C4256 71C4256 514256 534256 4C4256


    Original     		PDF 71C256 53C256 81C1000 71C1000 4C1024 81C4256 71C4256 4C4256 71C4400 4C4001 NEC D2732 41C1000 41256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732

    MS3212

    Abstract: hc 40201 MS3213 MS3213-1 MS3212-1 MS3212-31 MS3212-11 MS3212-2 MS3212-15 MS3212-21
    Text: CROSS REFERENCE GOVERNMENT N.S.N. TO APM PART NUMBER GOVERNMENT N.S.N. APM PART NO. MIL SPEC NO. / QPL'D 1005-01-148-6507 ST 1/4-28 x 3/8 1005-01-158-4498 1113/60 1015-00-041-0370 HE 1015 M5423/14-05 1025-01-091-3590 4085 3192291 1075-00-508-4635 N 9065 x 3/8


    Original     		PDF M5423/14-05 3050B N4080C M5423/14-07 N1030 M81264 N9040 N5045 1813/22MR5 LW16-1 MS3212 hc 40201 MS3213 MS3213-1 MS3212-1 MS3212-31 MS3212-11 MS3212-2 MS3212-15 MS3212-21

    avalon vhdl byteenable

    Abstract: avalon vhdl Avalon master slave object counter circuit
    Text: Avalon Verification IP Suite User Guide 101 Innovation Drive San Jose, CA 95134 www.altera.com Software Version: Document Date: Preliminary 10.0 August 2010 Copyright 2010 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all other


    Original     		PDF

    LH531000B

    Abstract: LH531000BN-S LH531000B-S
    Text: 531000B-S CMOS 1M 128K x 8 3 V-Drive MROM FEATURES DESCRIPTION • 131,072 words × 8 bit organization The 531000B-S is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 500 ns (MAX.)


    Original     		PDF LH531000B-S LH531000B-S 28-pin, 450-mil 28-PIN P028-P-0450) 28SOP LH531000B LH531000B LH531000BN-S

    LH531000B

    Abstract: LH531000BN-S LH531000B-S
    Text: 531000B-S CMOS 1M 128K x 8 3 V-Drive Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 words × 8 bit organization The 531000B-S is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology.


    Original     		PDF LH531000B-S LH531000B-S 28-PIN 28-pin, 450-mil A8-P-0450) 28SOP LH531000B LH531000B LH531000BN-S

    mrom

    Abstract: LH531000B
    Text: 531000B CMOS 1M 128K x 8 MROM FEATURES DESCRIPTION • 131,072 words × 8 bit organization The 531000B is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.)


    Original     		PDF LH531000B LH531000B 28-PIN 28-pin, 600-mil 450-mil 28SOP mrom

    Sony CXA1191M

    Abstract: philips ecg master replacement guide FZK101 YD 803 SGS FZK 101 Siemens CMC 707 am radio receiver philips ecg semiconductors master replacement guide CXA1191M ym2612 ecg semiconductors master replacement guide
    Text: Untitled HAM RADIO FILE - Various pinouts saved from the Chipdir 2010 http://www.chipdir.org/ 0512d -0512d +-\/-+ 1 -|5V in gnd in|- 24 2 -|5V in gnd in|- 23 3 -|5V in gnd in|- 22


    Original     		PDF 0512d ------------------------------------0512d z86e04 Sony CXA1191M philips ecg master replacement guide FZK101 YD 803 SGS FZK 101 Siemens CMC 707 am radio receiver philips ecg semiconductors master replacement guide CXA1191M ym2612 ecg semiconductors master replacement guide

    MSM531000

    Abstract: No abstract text available
    Text: O K I semiconductor 531000A/B 131,072-Word x 8-Bit Mask ROM GENERAL DESCRIPTION The M S M 531000A /B is a silicon gate C M O S device ROM with 131,072-word x 8-bit capacity. It operates on a 5V single pow er supply and all input and output are TTL com patible. The adoption


    OCR Scan     		PDF MSM531000A/B 072-Word 31000A 100ns 100pF MSM531000A/B" MSM531000

    531030

    Abstract: MSM27C1622BZ 02CM 27C131 27c822 27c832
    Text: M ask RO M s 1 Meg 2 Meg 4 Meg I 8 Meg i I I i i 128Kx8 256K x 8 512K x 8 I I 1-Meg x 8 I 2-Meg x 8 I M SM 531020B M SM 531000B M SM 531030B M SM 531021B M S M 5 3 1001B M SM 531031B M SM 532021B M SM 532001B M SM 532031B M S M 5 34 0 21 C M S M 5 34 0 01 C


    OCR Scan     		PDF 128Kx8 531020B 531000B 531030B 531021B 1001B 531031B 532021B 532001B 532031B 531030 MSM27C1622BZ 02CM 27C131 27c822 27c832

    02CM

    Abstract: No abstract text available
    Text: ROMs M a sk RO M s 1-M eg M a s k R O M s Part Number Configuration P ins/Package M SM 531020B 128K x 8 2 8 / DIP | M SM 531000B 128K x 8 2 8 / D IP 100 5.0 V M SM 5 3 1 0 3 0 B 128K x 8 2 8 / D IP 150 3.3 V 5.0 V 1 A ccess Tima M a x ns Voltage 70 5.0 V


    OCR Scan     		PDF 531020B 531000B 531021B 531001B 531031B 532021B 532001B 532031B 532020B 532000B 02CM

    tc531000p

    Abstract: TC541000AP TC531000
    Text: h >í i t v a r v / A i t L y v .in v ^ u i i TC541000AP / AF - 12, -1 5 TC541001AP/AF -1 2 , -1 5 SILICON STACKED GATE MOS TECHNICAL DATA 131,072 W O R D x 8 BIT CMOS ONE TIM E PROGRAMMABLE READ ONLY M E M O R Y DESCRIPTION T he TC 541000A P/ AF an d T C 541001A P / A F are a 131,072 word X 8 bit one tim e program m able


    OCR Scan     		PDF TC54100Ã AP/AF-12, TC541001AP/AF TC541000AP TC541001AP/ TC541000AP/AF 120ns/150ns TC571000AD/TC571001AD tc531000p TC531000

    sharp lh53

    Abstract: sharp lh53 1M
    Text: CMOS 1M 128K x 8 Mask-Programmable ROM DESCRIPTION FEATURES • 131,072 x 8 bit organization • Access time: 150 ns (M AX.) • Low power consumption: The 531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology.


    OCR Scan     		PDF LH531000B 28-pin, 600-m 450-m 44-pin I-------15 600-mil DIP28-P-600) sharp lh53 sharp lh53 1M

    Untitled

    Abstract: No abstract text available
    Text: L H 5 3 1 B - S CMOS 1M 128K x 8 3 V-Prive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The 531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 500 ns (MAX.)


    OCR Scan     		PDF LH531000B-S 28-pin, 450-mil OP028-P-0450) LH531000BN-S

    TC531000

    Abstract: 531000CP TC531000C
    Text: SILICON STACKED GATE MOS INTEGRATED CIRCUIT - 531000CP/CF-12,-15 1M BIT 128K W O R D x 8 BIT C O M S M A S K RO M DESCRIPTIO N T h e T C 5 3 1 0 0 0 C P /C F is a 1, 048, 576 b its re a d only m em ory o rgan ized a s 131, 072 w ords b y 8 b its


    OCR Scan     		PDF TC531000CP/CF-12 TC531000CP/CF 150ns A0-A16 A0-A15 TC531000 531000CP TC531000C

    28T0157

    Abstract: Chip Ferrite Beads For GHz Range Noise Suppressor CM501 b0735 HI1206T161 HR2220V801 HI1206N101 A-0393 transformer eaton el 198 CM3032V301
    Text: 1 ' TECHNICALREFERENCELIBRARY D0N0TREM0VE . rf Ir- i1 L.1 • § « s r— j k\ ISrjï I!k\J1rB1i 1u'9t Mi, * ?<rmk m y & .~ r 'j. 1 fj -f —J _ / ^ “ l* -yM Ferrite Solutions for Printed C ircuit Boards Cables and Connectors Ninth Edition ISO 9001 and QS 9000 Certified


    OCR Scan     		PDF

    85-264vac

    Abstract: DRAN60-24A DRAN60-24 schematic diagram 230VAC to 24VDC POWER SUPPLY
    Text: DRAN60 SERIES AC - DC DIN RAIL MOUNTABLE POWER SUPPLY INDUSTRIAL CONTROL EQUIPMENT FEATURES • UL/cUL/TUV/CE • UNIVERSAL INPUT 85~264VAC • SHORT CIRCUIT PROTECTION • INTERNAL INPUT FILTER • 2 YEARS WARRANTY : 5l 118 c^^kus c ^ ^ u s LISTED EN 61558-1


    OCR Scan     		PDF DRAN60 264VAC UL1310 DRAN60-05 DRAN60-I2 DRAN60-24 DRAN60-48 85-264VAC DRAN60-24A schematic diagram 230VAC to 24VDC POWER SUPPLY

    DRAN60-24A

    Abstract: switching power supply -24VDC -48VDC 5A schematic diagram 230VAC to 24VDC POWER SUPPLY
    Text: DRAN60 SERIES AC - DC DIN RAIL MOUNTABLE POWER SUPPLY INDUSTRIAL CONTROL EQUIPMENT FEATURES • UL/cUL/TUV/CE • UNIVERSAL INPUT 85~264VAC • SHORT CIRCUIT PROTECTION • INTERNAL INPUT FILTER • 3 YEARS WARRANTY : 5l 118 c^^kus c ^ ^ u s LISTED EN 61558-1


    OCR Scan     		PDF DRAN60 264VAC UL1310 DRAN60-05 DRAN60-I2 DRAN60-24 DRAN60-48 85-264VAC DRAN60-24A switching power supply -24VDC -48VDC 5A schematic diagram 230VAC to 24VDC POWER SUPPLY

    ic 7493 block diagram

    Abstract: No abstract text available
    Text: HY531OOOA Series HYUNDAI 1M X 1 -b it CMOS DRAM DESCRIPTION The HY531 OOOA is the 2nd generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531 OOOAutilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY531OOOA HY531 HY531000Ato 300mil 1AB01-20-MAY95 HY531000A HY531000AS HY531000ALS HY531000AJ ic 7493 block diagram

    Untitled

    Abstract: No abstract text available
    Text: L H 5 3 1 B - S CMOS 1M 128K x 8 3 V-Drive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The 531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Power consumption:


    OCR Scan     		PDF LH531000B-S 28-pin, 450-mil 28-PIN I000B OP028-P-0450)

    531000P

    Abstract: No abstract text available
    Text: 131,072 W O R D x 8 BIT C M O S UV ERASABLE A N D ELECTRICALLY P R O G R A M M A B L E READ O NLY M E M O R Y PRELIMINARY DESCRIPTION , The TC57H1000AD/TC57H1001AD is a 131,072 word X 8 bit CMOS ultraviolet light erasable and electrically programmable read only memory.


    OCR Scan     		PDF TC57H1000AD/TC57H1001AD TC57H1000AD TC57H1001AD 40mA/11 85ns/100ns. TC57H1000AD/TC57H1001AD. 531000P

    TA8172AF

    Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
    Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16


    OCR Scan     		PDF 015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P

    lh5359

    Abstract: e5bx
    Text: Ffe MASK ROM * ★ • MASK ROMs New product Under development * Features • Product lineup covers 11 capacity ranges from 256 k-bit to 128 M-bit. • Product variations with 3 types o f pinout including JEDEC standard EPROM, Mask ROM specific and Flash memory compatible pinout.


    OCR Scan     		PDF LH-532KXX LH532100BD/BN/BT/BS/BSR/BU 532048D 53V2P00A 532600D 532000B 532000BD LH-532C LH-5326XX lh5359 e5bx

    431 capacitor NCC

    Abstract: No abstract text available
    Text: 531000B CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 1 31,072 x 8 bit organization The 531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (M AX.)


    OCR Scan     		PDF LH531000B LH531000B 28-pin, 600-m 450-m 44-pin, 28-PIN 600-mil 431 capacitor NCC