42-PIN
Abstract: 44-PIN
Text: CMOS 16M 2M x 8/1M × 16 Mask-Programmable ROM LH5316500C FEATURES • 2,097,152 words × 8 bit organization (Byte mode) 1,048,576 words × 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 275 mW (MAX.) Standby: 550 µW (MAX.)
|
Original
|
LH5316500C
42-pin,
600-mil
44-pin,
LH5316500C
16M-bit
42-PIN
44SOP
44-PIN
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LH5316500C FEATUR ES • 2,097,152 words Byte mode 1,048,576 words (Word mode) C M O S 16M (2M x 8/1M x 16) M a sk -P ro g ra m m a b le R O M PIN CONNECTIONS x 8 bit organization 42-PIN DIP x 16 bit organization • Access time: 150 ns (MAX.) TOP VIEW s
|
OCR Scan
|
LH5316500C
42-PIN
42-pin,
600-mil
44-pin,
LH5316500C
16M-bit
42DIP
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LH5316500C FEATURES CMOS 16M 2M x 8/1M x 16 Mask-Programmable ROM PIN CONNECTIONS • 2,097,152 x 8 bit organization (Byte mode) 1,048,576 x 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 275 mW (MAX.) Standby: 550 nW (MAX.)
|
OCR Scan
|
LH5316500C
42-pin,
600-mil
44-pin,
48-pin,
42-PIN
LH5316500C
|
PDF
|
536G
Abstract: LH534600
Text: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)
|
OCR Scan
|
LH53259D/N/T
LH53517D/N/T/TR
LH531VOOD/N/TAJ
LH53V1ROON/T
LH530800AD/AN/AU
LHS30800AD/AN-Y
LH531OOOBD/BN
LH531000BN-S
LH531024D/N/U
LH532100BD
536G
LH534600
|
PDF
|
lh57257
Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429
|
OCR Scan
|
IR2E201
IR2E24
IR2E27/A
IR2E28
IR2E29
IR2E30
IR2E31/A
IR2E32N9
IR2E34
IR2E41
lh57257
IR2E31
IR2E01
IR2C07
IR2E27
IR2E19
IR2E31A
IR3n06
IR2E02
|
PDF
|
LH231G
Abstract: lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235
Text: MEMORIES ★Under development • M ask ROMs SlpÉHRfi Bonflgmllan jvorai x d m i NMOS <"^g|g|ï|ïi£- User1* No. sssysr Sllpjiijp 1 currant mA MAX. ■ Paefcagfe ft- • 64k 8k x 8 LH2389D LH2369XX 200 60 5 ± 10% 28DIP 128k 16k x 8 LH23128D LH2326XX 200
|
OCR Scan
|
28DIP
28DIP
LH2389D
LH23128D
LH23286D
LH236120
LH2310006D
LH231G
lh5348
LH538b
LH2326
lh5s4
LHMN5
lh5359
lh5348xx
lh537
LH235
|
PDF
|
flash 64m
Abstract: No abstract text available
Text: MEMORIES Mask ROMs C a p a c ity Access time C o nfig u ra tio n 120ns 100ns 80ns 150ns 256kj I 32k x 8 ] LH53259 12k I 64k x 8 LH53517 128k x 8 LH530800A LH531V00 1M LH531024 64k x 16 i LH532100B-1 256k x 8 ! LH532100B 2M JEDEC standard EPROM pinout 128k x 161
|
OCR Scan
|
100ns
120ns
150ns
256kj
LH53259
LH53517
LH531V00
LH530800A
LH531024
LH532048
flash 64m
|
PDF
|
Untitled
Abstract: No abstract text available
Text: C M O S 1 6 M 2 M x 8/ 1 M x 16 M ROM FEATURES PIN CONNECTIONS • 2,097,152 words x 8 bit organization (Byte mode) 1,048,576 words x 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 275 mW (MAX.) Standby: 550
|
OCR Scan
|
42-pin,
600-mil
44-pin,
42-PIN
LH5316500C
LH5316500C
|
PDF
|
48 tsop flash pinout
Abstract: LH23512
Text: MEMORIES Mask ROMs ^Under development Capacity Pinout Model No. Configuration Access time ns 55 1 64k !- 1 8k x 8 128k 16k x ! 256k 32k x 8 |- -) [ 512k 64k x 8 b — I 80 100 120 150 200 Package 250 500 □ LH2369 28 LH23255 28 □ LH53259 28 28 38(1)
|
OCR Scan
|
LH2369
LH23126
LH23255
LH53259
LH23512
LH53517
LH53H0900
LH531VOO
LH530800A
LH530800A-Y
48 tsop flash pinout
|
PDF
|