MB8316200
Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
Text: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S
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23C4000C
23C4100C
23C4200C
23V4000C
KM23V41
KM23V41OOCET
UPD23C4001EB
UPD23C4000S
HN62344B
HN62444
MB8316200
uPD23C4000S
TC533200
UPD23C4000
23C32000a
624116
HN62318/338B
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L2423
Abstract: TC534000CP TC534000CF
Text: TOSHIBA TC534000CP/CF PRELIMINARY SILICON STACKED GATE CMOS 524,288 WORD x 8 BIT CMOS MASK ROM Description The T C 5 3 4 0 0 0 C P /C F is a 4 ,1 9 4 ,3 0 4 bit read only m e m o ry o rganize d as 5 2 4 ,2 8 8 w o rd s b y 8 bits. The T C 5 3 4 0 0 0 C P /C F is fa b ric a te d using T o shiba’s ad v a n c e d C M O S te ch n o lo g y w h ic h results in high sp e e d an d lo w p o w e r
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TC534000CP/CF
120ns,
10OpA.
L2423
TC534000CP
TC534000CF
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TC534000CP
Abstract: No abstract text available
Text: TOSHIBA TC534000CP/CF TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 4 MBIT 512 K WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC534000CP/CF is a 4,194,304-bit Read Only Memory organized as 524,288 words by 8 bits. The TC534000CP/CF is fabricated using Toshiba’s advanced CMOS technology which provides the
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TC534000CP/CF
TC534000CP/CF
304-bit
32-pin
120ns
TC534000CP
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TC5816FT
Abstract: TC5332410F TC5316200CP TC531621 TC5310
Text: CMOS Flash E2PROM Capacity 1MBit flash X6 Max. Power Dissipation mW Power Supply Max. Accès» Organization Time(ns) V p p (V) Voc(V) Typ» No. Wiita/Erase Standby Read Operating Write/Erase Temperature Method 600mil DIP •TC58F010F-10, 12 525mil SOP •TC58F010FT10, 12
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TC58F010P-10,
600mil
525mil
TC58F010F-10,
TC58F010FT10,
TC58F010TR-10,
TC58F010T-10,
TC58F4000P-12,
TC58F4000F-12,
450mi!
TC5816FT
TC5332410F
TC5316200CP
TC531621
TC5310
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