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    LH531024 Search Results

    LH531024 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LH531024 Sharp CMOS 1M (64K x 16) MROM Original PDF
    LH531024D Sharp CMOS 1M(64M x 16) MROM Original PDF
    LH531024N Sharp CMOS 1M(64M x 16) MROM Original PDF
    LH531024U Sharp CMOS 1M(64M x 16) MROM Original PDF

    LH531024 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    40-pin EPROM pinout

    Abstract: 44-PIN LH531024 QFJ044-P-S650 C1161
    Text: LH531024 FEATURES • 65,536 words x 16 bit organization CMOS 1M 64K × 16 MROM PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TOP VIEW • Access time: 100 ns (MAX.) • Power consumption: Operating: 412.5 mW (MAX.) Standby: 550 µW (MAX.) VCC NC 1 40 CE 2 39 NC


    Original
    PDF LH531024 40-PIN 40-pin, 600-mil 525-mil 44QFJ-1 44-pin, 650-mil 40-pin EPROM pinout 44-PIN LH531024 QFJ044-P-S650 C1161

    40-pin EPROM pinout

    Abstract: 44-PIN LH531024 QFJ044-P-S650 C1161
    Text: LH531024 FEATURES • 65,536 words x 16 bit organization CMOS 1M 64K × 16 Mask-Programmable ROM PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TOP VIEW • Access time: 100 ns (MAX.) • Power consumption: Operating: 412.5 mW (MAX.) Standby: 550 µW (MAX.) VCC


    Original
    PDF LH531024 40-PIN 40-pin, 600-mil 44QFJ-1 44-pin, 650-mil 40-pin EPROM pinout 44-PIN LH531024 QFJ044-P-S650 C1161

    GI9332

    Abstract: mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000
    Text: PROM/ROM index and cross reference 1.9 Jan 16, 2000 -Fujitsu 256K 32k x 8 MB83256 28 pin 512k 64k x 8 MB83512 (28 pin) 1M 128k x 8 MB831000 (32 pin) 2M 256k x 8 MB832000 (32 pin) 4M 256k x 16 / 512k x 8


    Original
    PDF MB83256 MB83512 MB831000 MB832000 MB834100 MB834000 MB834200 27C1024H 27C101A 27C301A GI9332 mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000

    40-pin EPROM pinout

    Abstract: ta 1275 az
    Text: LH531024 FEATURES • 65,536 words x 16 bit organization CMOS 1M 64K x 16 M a sk-P ro g ra m m a b le ROM PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TO P VIEW • Access time: 100 ns (MAX.) / NC C • Power consumption: Operating: 412.5 mW (MAX.) Standby: 550 |j.W (MAX.)


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    PDF LH531024 40-pin, 600-mil 525-mil 44-pin, 650-mil 40-PIN 40-pin EPROM pinout ta 1275 az

    flash 64m

    Abstract: No abstract text available
    Text: MEMORIES Mask ROMs C a p a c ity Access time C o nfig u ra tio n 120ns 100ns 80ns 150ns 256kj I 32k x 8 ] LH53259 12k I 64k x 8 LH53517 128k x 8 LH530800A LH531V00 1M LH531024 64k x 16 i LH532100B-1 256k x 8 ! LH532100B 2M JEDEC standard EPROM pinout 128k x 161


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    PDF 100ns 120ns 150ns 256kj LH53259 LH53517 LH531V00 LH530800A LH531024 LH532048 flash 64m

    531024

    Abstract: 40-pin EPROM pinout
    Text: LH531024 FEATURES • 65,536 words x 16 bit organization C M O S 1M 64K x 16 MROM PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TOP VIEW • Access time: 100 ns (MAX.) s NC • Power consumption: Operating: 412.5 mW (MAX.) Standby: 550 jiW (MAX.) CË • Static operation


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    PDF LH531024 40-PIN 40-pin, 600-mil 525-mil 44-pin, 650-mil LH531024 531024 40-pin EPROM pinout

    Untitled

    Abstract: No abstract text available
    Text: LH531024 FEATURES • 65,536 words x 16 bit organization CMOS 1M 64K x 16 MROM PIN CONNECTIONS 4 0 -P IN D IP T O P V IE W 4 0 -P IN S O P • Access time: 100 ns (MAX.) - S NC C • Power consumption: Operating: 412.5 mW (MAX.) Standby: 550 (iW (MAX.)


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    PDF LH531024 40-pin, 600-mil 525-mil 44-pin, 650-mil

    536G

    Abstract: LH534600
    Text: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)


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    PDF LH53259D/N/T LH53517D/N/T/TR LH531VOOD/N/TAJ LH53V1ROON/T LH530800AD/AN/AU LHS30800AD/AN-Y LH531OOOBD/BN LH531000BN-S LH531024D/N/U LH532100BD 536G LH534600

    lh57257

    Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
    Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429


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    PDF IR2E201 IR2E24 IR2E27/A IR2E28 IR2E29 IR2E30 IR2E31/A IR2E32N9 IR2E34 IR2E41 lh57257 IR2E31 IR2E01 IR2C07 IR2E27 IR2E19 IR2E31A IR3n06 IR2E02

    LH231G

    Abstract: lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235
    Text: MEMORIES ★Under development • M ask ROMs SlpÉHRfi Bonflgmllan jvorai x d m i NMOS <"^g|g|ï|ïi£- User1* No. sssysr Sllpjiijp 1 currant mA MAX. ■ Paefcagfe ft- • 64k 8k x 8 LH2389D LH2369XX 200 60 5 ± 10% 28DIP 128k 16k x 8 LH23128D LH2326XX 200


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    PDF 28DIP 28DIP LH2389D LH23128D LH23286D LH236120 LH2310006D LH231G lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235

    LQ070T5BG01

    Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
    Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66


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    PDF 109-n GL1PR112. GL1PR135. GL1PR136. GL1PR211. GL1PR212. GL3KG63. GL3P201. GL3P202. GL3P305. LQ070T5BG01 LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506

    IR3Y29B

    Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
    Text: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX


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    PDF ARM710 ARM810 IR3T24 IR3T24N IR3Y05Y IR3Y08 IR3Y12B IR3Y18A IR3Y21 IR3Y26A IR3Y29B ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR2E02

    48 tsop flash pinout

    Abstract: LH23512
    Text: MEMORIES Mask ROMs ^Under development Capacity Pinout Model No. Configuration Access time ns 55 1 64k !- 1 8k x 8 128k 16k x ! 256k 32k x 8 |- -) [ 512k 64k x 8 b — I 80 100 120 150 200 Package 250 500 □ LH2369 28 LH23255 28 □ LH53259 28 28 38(1)


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    PDF LH2369 LH23126 LH23255 LH53259 LH23512 LH53517 LH53H0900 LH531VOO LH530800A LH530800A-Y 48 tsop flash pinout

    lh5359

    Abstract: e5bx
    Text: Ffe MASK ROM * ★ • MASK ROMs New product Under development * Features • Product lineup covers 11 capacity ranges from 256 k-bit to 128 M-bit. • Product variations with 3 types o f pinout including JEDEC standard EPROM, Mask ROM specific and Flash memory compatible pinout.


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    PDF LH-532KXX LH532100BD/BN/BT/BS/BSR/BU 532048D 53V2P00A 532600D 532000B 532000BD LH-532C LH-5326XX lh5359 e5bx

    lh5s4

    Abstract: LH-MN47XX lh5s4axx LH5359 LH5s lh5317 LH532CXX 32DIP
    Text: MEMORIES • JEDEC Standard EPROM Pinout • Low voltage operation 3 V, 1.8 V Access time Bit Capacity configuration 1M 2M 4M Model No. LH53V1ROON/T LH53V2R00AN/AT LH53V2T00E LH53V2YOONÆ LH53V4T00E LH53V4R00AN/AT LH53V4Y00NÆ x 8 x 8 x 8 User’s No. Supply


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    PDF LH53V1ROON/T LH53V2R00AN/AT LH53V2T00E LH53V2YOONÆ LH53V4T00E LH53V4R00AN/AT LH53V4Y00NÆ 32SOP/32TSOP 32TSOP lh5s4 LH-MN47XX lh5s4axx LH5359 LH5s lh5317 LH532CXX 32DIP