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    SEP8506 Search Results

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    SEP8506 Price and Stock

    Honeywell Sensing and Control SEP8506-002

    EMITTER IR 935NM 50MA RADIAL
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    Onlinecomponents.com SEP8506-002 3,152
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    Master Electronics SEP8506-002 3,152
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    Honeywell Sensing and Control SEP8506-001

    EMITTER IR 935NM 50MA RADIAL
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    Onlinecomponents.com SEP8506-001 495
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    Honeywell Sensing and Control SEP8506-003

    EMITTER IR 935NM 50MA RADIAL
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    Newark SEP8506-003 Bulk 1
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    Onlinecomponents.com SEP8506-003 8,507
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    Chip1Stop SEP8506-003 8,507
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    Master Electronics SEP8506-003
    • 1 $2.492
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    • 100 $1.318
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    Honeywell Sensing and Control SEP8506-019

    SENSOR OPT INFRARED
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    Newark SEP8506-019 Bulk 1
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    Onlinecomponents.com SEP8506-019 100
    • 1 $1.88
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    Chip1Stop SEP8506-019 100
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    Master Electronics SEP8506-019
    • 1 $1.88
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    Honeywell Sensing and Control SEP8506-003-DFC1

    Infrared Emitters/Honeywell |Honeywell SEP8506-003-DFC1
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    Newark SEP8506-003-DFC1 Bulk 1
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    Onlinecomponents.com SEP8506-003-DFC1 13,208
    • 1 $1.55
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    Chip1Stop SEP8506-003-DFC1 13,208
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    Master Electronics SEP8506-003-DFC1
    • 1 $1.55
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    Find more SEP8506 price and stock on Findchips.com

    SEP8506 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SEP8506 Honeywell GaAs Infrared Emitting Diode Original PDF
    SEP8506-001 Honeywell LED IRLED 935NM Original PDF
    SEP8506-002 Honeywell LED IRLED 935NM Original PDF
    SEP8506-003 Honeywell SEP Series GaAs Infrared Emitting Diode, Side-emitting Plastic Package Original PDF
    SEP8506-003 Honeywell LED IRLED 935NM Original PDF
    SEP8506-003 Honeywell Infrared, UV, Visible Emitters, Optoelectronics, DIODE IR EMITTING GAAS SIDE LOOK Original PDF
    SEP8506-1 Spectronics Product Data Book (Shortform) Scan PDF
    SEP85063 Unknown IR LED IM PLASTIKGEHAEUSE 50GRAD 935NM Original PDF

    SEP8506 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    phototransistor npn

    Abstract: simple phototransistor SEP8506-003 high sensitivity reflective phototransistor phototransistor 600 nm phototransistor datasheet SDP8476 SEP8706 SDP8476-201 SEP8506
    Text: SDP8476-201 Low Light Rejection Phototransistor FEATURES • Side-looking plastic package • Low light level immunity • 50¡ nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes INFRA-21.TIF


    Original     		PDF SDP8476-201 SEP8506 SEP8706 INFRA-21 SDP8476 SEP8506-003 45mW/cm 90mW/cm phototransistor npn simple phototransistor high sensitivity reflective phototransistor phototransistor 600 nm phototransistor datasheet SDP8476-201

    silicon photodiode

    Abstract: SDP8276 SEP8506 SEP8706 fast photodiode spectrally matched photodiode
    Text: SDP8276 Silicon Photodiode FEATURES • Side-looking plastic package • Linear response • Fast response time • Internal visible light rejection filter • 50¡ nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes


    Original     		PDF SDP8276 SEP8506 SEP8706 INFRA-79 SDP8276 silicon photodiode fast photodiode spectrally matched photodiode

    Infrared Phototransistor

    Abstract: infrared diode Infrared Emitting Diode SDP8106 SDP8406 SEP8506
    Text: 17 September 1997 SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50¡ nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series


    Original     		PDF SEP8506 SDP8406 SDP8106 SDP8000/8600 INFRA-20 SEP8506 Infrared Phototransistor infrared diode Infrared Emitting Diode SDP8106

    SDP8106

    Abstract: SEP8506 SEP8706
    Text: SDP8106 Silicon Photodarlington FEATURES • Side-looking plastic package • 50¡ nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes INFRA-79.TIF DESCRIPTION The SDP8106 is an NPN silicon photodarlington


    Original     		PDF SDP8106 SEP8506 SEP8706 INFRA-79 SDP8106

    all datasheet phototransistor

    Abstract: Infrared Phototransistor SDP8406 SEP8506 SEP8706
    Text: 17 September 1997 SDP8406 Silicon Phototransistor FEATURES • Side-looking plastic package • 50¡ nominal acceptance angle • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes INFRA-21.TIF


    Original     		PDF SDP8406 SEP8506 SEP8706 INFRA-21 SDP8406 SEP8506 all datasheet phototransistor Infrared Phototransistor

    SDP8106

    Abstract: SEP8506 SEP8706 Photodarlington
    Text: 17 September 1997 SDP8106 Silicon Photodarlington FEATURES • Side-looking plastic package • 50¡ nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes INFRA-79.TIF DESCRIPTION The SDP8106 is an NPN silicon photodarlington molded


    Original     		PDF SDP8106 SEP8506 SEP8706 INFRA-79 SDP8106 Photodarlington

    SEP8506

    Abstract: SDP8000 SDP8406 SDP8106
    Text: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50¡ nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger


    Original     		PDF SEP8506 SDP8406 SDP8106 SDP8000/8600 INFRA-20 SEP8506 SDP8000 SDP8106

    SDP8406

    Abstract: SDP8406-004 SDP8406-001 SDP8406-002 SDP8406-003 SEP8706
    Text: SDP8406 Silicon Phototransistor INFRA-21.TIF FEATURES • Side-looking plastic package • 50° nominal acceptance angle • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8506/8526 and SEP8706 infrared emitting diodes OUTLINE DIMENSIONS in inches (mm)


    Original     		PDF SDP8406 INFRA-21 SEP8506/8526 SEP8706 INFRA-17 SDP8406 SEP8506 INFRA-31 SDP8406-004 SDP8406-001 SDP8406-002 SDP8406-003

    SEP8506-001

    Abstract: SDP8106 SDP8406 SEP8506 SDP8000
    Text: Datasheet - SEP8506-001 SEP8506-001 SEP Series GaAs Infrared Emitting Diode, Side-emitting Plastic Package Representative photograph, actual product appearance may vary. Features ● ● ● ● Due to regional agency approval requirements, some products may not be


    Original     		PDF SEP8506-001 SDP8406 SDP8106 SDP8000/8600 SEP8506 20and 20Settings/rabab/Desktop/Datasheet 20SEP8506-001 SEP8506-001 SDP8406 SDP8000

    phototransistor application circuit

    Abstract: npn phototransistor phototransistor npn all datasheet phototransistor SDP8476 simple phototransistor Infrared Phototransistor phototransistor 600 nm SDP8476-201 SEP8506-003
    Text: 17 September 1997 SDP8476-201 Low Light Rejection Phototransistor FEATURES • Side-looking plastic package • Low light level immunity • 50¡ nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes


    Original     		PDF SDP8476-201 SEP8506 SEP8706 INFRA-21 SDP8476 SEP8506-003 45mW/cm2 90mW/cm2 phototransistor application circuit npn phototransistor phototransistor npn all datasheet phototransistor simple phototransistor Infrared Phototransistor phototransistor 600 nm SDP8476-201

    SDP8276

    Abstract: silicon photodiode SEP8506 SEP8706 fast photodiode spectrally matched photodiode
    Text: 17 September 1997 SDP8276 Silicon Photodiode FEATURES • Side-looking plastic package • Linear response • Fast response time • Internal visible light rejection filter • 50¡ nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes


    Original     		PDF SDP8276 SEP8506 SEP8706 INFRA-79 SDP8276 silicon photodiode fast photodiode spectrally matched photodiode

    SDP8406

    Abstract: SEP8506 SEP8706
    Text: SDP8406 Silicon Phototransistor FEATURES • Side-looking plastic package • 50¡ nominal acceptance angle • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes INFRA-21.TIF DESCRIPTION The SDP8406 is an NPN silicon phototransistor molded


    Original     		PDF SDP8406 SEP8506 SEP8706 INFRA-21 SDP8406 SEP8506

    TSHA3400

    Abstract: "Photo Interrupter" sharp 306 transistor Infrared emitter TELEFUNKEN infrared "Photo Interrupter" 380 transistor LTR-536AD LTE-302-M LTE5238A
    Text: CROSS REFFERENCE GUIDE HOfŒYWELL LITON Infrared Emitter SHARP LITON Infrared Emitter SEP8505/8525 LET-209 GL480 LTE-306 SEP8506/8526 LTE-302-M G L360/380 LTE-4206 GL537 LTE-3270 Photo Transistor SEP8405/8425 LTR-209 GL527 LTE-3271T SEP8406/8426 LTR-301 GL538


    OCR Scan     		PDF SEP8505/8525 SEP8506/8526 SEP8405/8425 SEP8406/8426 SEP8403 HOA708 HOA0860 HOA0870 LTR-209 LTR-301 TSHA3400 "Photo Interrupter" sharp 306 transistor Infrared emitter TELEFUNKEN infrared "Photo Interrupter" 380 transistor LTR-536AD LTE-302-M LTE5238A

    HOA2002-1

    Abstract: HOA2004-1 HOA2001-1 HOA2003-1 HOA2002 "micro x" transistor HOA2003
    Text: HONEYWELL INC/ MICRO 41E D • 4551Û30 DOIBA?1! T ■ H0N1 7^ ^/"ŸS Optoschmitt Assemblies These assemblies are based on the SEP8506 IRED and SDP8600 optoschmitt product families. The sensor output is buffered by a Schmitt Trigger to guarantee transition times consistent with the requirements of todays digital circuits. Maximum


    OCR Scan     		PDF 013fl7ti SEP8506 SDP8600 HOA2001-1 HOA2002-1 HOA2003-1 HOA2004-1 HOA2002 "micro x" transistor HOA2003

    Untitled

    Abstract: No abstract text available
    Text: SDP8406 Silicon Phototransistor FEATURES • Side-looking plastic package • 50° nominal acceptance angle . Wide sensitivity ranges • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes DESCRIPTION The SDP8406 is an NPN silicon phototransistor molded


    OCR Scan     		PDF SDP8406 SEP8506 SEP8706 SDP8406 00ES5MC

    Untitled

    Abstract: No abstract text available
    Text: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package . 50“ nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger


    OCR Scan     		PDF SEP8506 SDP8406 SDP8106 SDP8000/8600 SEP8506

    Untitled

    Abstract: No abstract text available
    Text: HONEYWELL INC/ MICRO M1E D 4 5 5 1 0 3 0 00 1 3 07 5 1 IH0N1 -.T-m-73 Transmissive With Plastic Encapsulated Components Assemblies Assemblies on this page are based on plastic-encapsulated components from the SEP8506 and SDP8406 device families. All sensors are phototransistors.


    OCR Scan     		PDF T-m-73 SEP8506 SDP8406 HOA0825-1 HOA0825-2 HOA0825-3 HOA0825-4 060x0 HOAO86- -1-N55)

    Untitled

    Abstract: No abstract text available
    Text: SDP8106 Silicon Photodarlington FEATURES • Side-looking plastic package . 50° nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes DESCRIPTION OUTLINE DIMENSIONS in inches (mm) The SDP8106 is an NPN silicon photodarlington


    OCR Scan     		PDF SDP8106 SEP8506 SEP8706 SDP8106 JJ11IL+

    Untitled

    Abstract: No abstract text available
    Text: SDP8476-201 Low Light Rejection Phototransistor FEATURES • Side-looking plastic package • Low light level immunity • 50° nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes tei&r *i i .r


    OCR Scan     		PDF SDP8476-201 SEP8506 SEP8706 SDP8476 SEP8506-003 45mW/cm2 90mW/cma

    Untitled

    Abstract: No abstract text available
    Text: SDP8106 Silicon Photodarlington FEATURES • Side-looking plastic package • 50° nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes DESCRIPTION The SDP8106 is an NPN silicon photodarlington


    OCR Scan     		PDF SDP8106 SEP8506 SEP8706 SDP8106 f1000

    phototransistor 650 nm

    Abstract: No abstract text available
    Text: SDP8406 Silicon Phototransistor FEATURES • Side-looking plastic package • 50° nominal acceptance angle • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8506/8526 and SEP8706 infrared emitting diodes «•flfSr ■ mFï ’ 5, '


    OCR Scan     		PDF SDP8406 SEP8506/8526 SEP8706 SDP8406 SEP8506 phototransistor 650 nm

    SEP8506-002

    Abstract: No abstract text available
    Text: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt


    OCR Scan     		PDF SEP8506 SDP8406/8426 SDP8106 SDP8000/8600 SEP8506 SDP8406 SEP8506-002

    HOA2001-1

    Abstract: HOA2004-1 h0a2001 HOA2002-1 HOA2003-1 Micro Sensor HOA2001 040 SENSOR SDP8600 SEP8506
    Text: HONEYWELL INC/ MICRO 41E D • 4SS1Ô3D □Q13fl7cì 1 m W O U lT 'V/-73 Optoschmitt Assemblies These assemblies are based on the SEP8506IRED and SDP8600 optoschmitt product families. The sensor output is buffered by a Schmitt Trigger to guarantee transition times consistent with the requirements of todays digital circuits. Maximum


    OCR Scan     		PDF SEP8506IRED SDP8600 SEP8506 HOA2001-1 HOA2002-1 HOA2003-1 040x0 HOA2004-1 h0a2001 Micro Sensor HOA2001 040 SENSOR

    P8706

    Abstract: SEP8526
    Text: SDP8426 Silicon Phototransistor FEATURES • Side-looking plastic package • 50° nominal acceptance angle • Mechanically and spectrally matched to SEP8506/8526 and SE P8706 infrared emitting diodes DESCRIPTION OUTLINE DIMENSIONS in inches (mm) The SDP8426 is an N PN silicon phototransistor molded


    OCR Scan     		PDF SDP8426 SEP8506/8526 P8706 SDP8426 SEP8526 SEP8526