Infrared Phototransistor
Abstract: infrared diode Infrared Emitting Diode SDP8106 SDP8406 SEP8506
Text: 17 September 1997 SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50¡ nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series
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SEP8506
SDP8406
SDP8106
SDP8000/8600
INFRA-20
SEP8506
Infrared Phototransistor
infrared diode
Infrared Emitting Diode
SDP8106
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SDP8106
Abstract: SEP8506 SEP8706
Text: SDP8106 Silicon Photodarlington FEATURES • Side-looking plastic package • 50¡ nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes INFRA-79.TIF DESCRIPTION The SDP8106 is an NPN silicon photodarlington
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SDP8106
SEP8506
SEP8706
INFRA-79
SDP8106
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SDP8106
Abstract: SEP8506 SEP8706 Photodarlington
Text: 17 September 1997 SDP8106 Silicon Photodarlington FEATURES • Side-looking plastic package • 50¡ nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes INFRA-79.TIF DESCRIPTION The SDP8106 is an NPN silicon photodarlington molded
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SDP8106
SEP8506
SEP8706
INFRA-79
SDP8106
Photodarlington
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SEP8506
Abstract: SDP8000 SDP8406 SDP8106
Text: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50¡ nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger
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SEP8506
SDP8406
SDP8106
SDP8000/8600
INFRA-20
SEP8506
SDP8000
SDP8106
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SEP8706-003
Abstract: SEP8706 SEP8706-001 SDP8106 SEP8706-002
Text: SEP8706 AlGaAs Infrared Emitting Diode INFRA-20.TIF FEATURES • Side-emitting plastic package • 50° nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive current • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106
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SEP8706
INFRA-20
SDP8406/8426
SDP8106
SDP8000/8600
INFRA-71
SEP8706
INFRA130
SEP8706-003
SEP8706-001
SDP8106
SEP8706-002
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SDP8106
Abstract: SDP8406 SEP8706
Text: SEP8706 AlGaAs Infrared Emitting Diode FEATURES • Side-looking plastic package • 50¡ nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106
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SEP8706
SDP8406
SDP8106
SDP8000/8600
INFRA-20
SEP8706
SDP8106
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PDF
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photodarlington
Abstract: SDP8106 SDP8106-001 SEP8506 SEP8706
Text: Datasheet - SDP8106-001 SDP8106-001 Representative photograph, actual product appearance may vary. SDP Series Silicon PhotoDarlington, Side-looking Plastic Package Features ● ● Due to regional agency approval requirements, some products may not be available in your area.
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SDP8106-001
SEP8506
SEP8706
SDP8106
photodarlington
SDP8106-001
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SEP8506-001
Abstract: SEP8506-002 SEP8506-003 SDP8106 SEP8506 infra red diode
Text: SEP8506 GaAs Infrared Emitting Diode INFRA-20.TIF FEATURES • Side-emitting plastic package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt
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SEP8506
INFRA-20
SDP8406/8426
SDP8106
SDP8000/8600
INFRA-71
SEP8506
INFRA130
SEP8506-001
SEP8506-002
SEP8506-003
SDP8106
infra red diode
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HOA1883
Abstract: SDP8106 SDP8406 SEP8506
Text: HOA1883 Transmissive Sensor FEATURES • Choice of phototransistor or photodarlington output • Wide lead spacing • 0.060 in. 1.52 mm dia. detector aperture • 0.140 in.(3.56 mm) slot width INFRA-41.TIF OUTLINE DIMENSIONS in inches (mm) Tolerance 3 plc decimals
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HOA1883
INFRA-41
HOA1883
SDP8106
SDP8406
SEP8506
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HOA1885
Abstract: SDP8106 SDP8406
Text: HOA1885 Transmissive Sensor FEATURES • Choice of phototransistor or photodarlington output • High profile package for raised optical centerline • Ambient light and dust protective filter • 0.200 in. 5.08 mm slot width INFRA-69.TIF DESCRIPTION The HOA1885 series consists of an infrared emitting
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HOA1885
INFRA-69
HOA1885
HOA1885-
SDP8106
SDP8406
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metal detector schematic
Abstract: METAL DETECTOR circuit for make metal detector sensor Metal Detector all datasheet phototransistor pulse metal detector HOA1874 hydrocarbon sensor metal detector circuit HOA1874-001
Text: 17 September 1997 HOA1874 Transmissive Sensor FEATURES • Choice of phototransistor or photodarlington output • Three sensitivity ranges • Choice of metal can package or plastic molded components • 0.120 in. 3.05 mm slot width INFRA-15.TIF DESCRIPTION
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HOA1874
INFRA-15
HOA1874
HOA1874-001,
HOA1874-003,
HOA1874-011
metal detector schematic
METAL DETECTOR circuit for make
metal detector sensor
Metal Detector
all datasheet phototransistor
pulse metal detector
hydrocarbon sensor
metal detector circuit
HOA1874-001
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Untitled
Abstract: No abstract text available
Text: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package . 50“ nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger
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OCR Scan
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SEP8506
SDP8406
SDP8106
SDP8000/8600
SEP8506
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PDF
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Untitled
Abstract: No abstract text available
Text: SEP8706 AIGaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50° nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive current • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106
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OCR Scan
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SEP8706
SDP8406/8426
SDP8106
SDP8000/8600
SEP8706
SDP8406
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PDF
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Untitled
Abstract: No abstract text available
Text: SDP8106 Silicon Photodarlington FEATURES • Side-looking plastic package . 50° nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes DESCRIPTION OUTLINE DIMENSIONS in inches (mm) The SDP8106 is an NPN silicon photodarlington
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OCR Scan
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SDP8106
SEP8506
SEP8706
SDP8106
JJ11IL+
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SEP8506-002
Abstract: No abstract text available
Text: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt
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OCR Scan
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SEP8506
SDP8406/8426
SDP8106
SDP8000/8600
SEP8506
SDP8406
SEP8506-002
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R840
Abstract: NFRA-20-TIF
Text: SEP8706 AIGaAs Infrared Emitting Diode FEATURES • Side-looking plastic package • 50° nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106
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OCR Scan
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SEP8706
SDP8406
SDP8106
SDP8000/8600
NFRA-20-TIF
SEP8706
R840
NFRA-20-TIF
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PDF
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Untitled
Abstract: No abstract text available
Text: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger
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OCR Scan
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SEP8506
SDP8406
SDP8106
SDP8000/8600
INFRA-20
SEP8506
SEP8506---
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PDF
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Untitled
Abstract: No abstract text available
Text: SEP8706 AIGaAs Infrared Emitting Diode FEATURES • Side-looking plastic package • 50° nominal beam angle • 880 nm wavelength » Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106
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OCR Scan
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SEP8706
SDP8406
SDP8106
SDP8000/8600
SEP8706
G0224T4
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PDF
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Untitled
Abstract: No abstract text available
Text: SEP8526 GaAs Infrared Emitting Diode FEATURES • Side-emitting package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger
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OCR Scan
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SEP8526
SDP8406/8426
SDP8106
SDP8000/8600
SEP8526
SDP8426
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PDF
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Untitled
Abstract: No abstract text available
Text: SDP8106 Silicon Photodarlington FEATURES • Side-looking plastic package • 50° nominal acceptance angle • Mechanically and spectrally matched to SEP8506/8526 and SEP8706 infrared emitting diodes DESCRIPTION The SDP8106 is an NPN silicon photodarlington molded
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OCR Scan
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SDP8106
SEP8506/8526
SEP8706
SDP8106
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PDF
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sep8526-002
Abstract: No abstract text available
Text: SEP8526 GaAs Infrared Emitting Diode FEATURES • Side-emitting package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger
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OCR Scan
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SEP8526
SDP8406/8426
SDP8106
SDP8000/8600
SEP8526
SDP8426
sep8526-002
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PDF
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HOA-1882-12
Abstract: HOA1874-12 HOA1873-12 HOA1879-15 HOA1879-11 HOA1873-13 HOA1872-13 D 400 transistor HOA1882-12 transistor
Text: HONEYWELL INC/ MICRO MIE D M SSlfiBD G 013ñ7 b 3 • M O N I K A - Z ? Assemblies Transmissive With Plastic Encapsulated Components The assemblies on this page are based on SEP8506IRED, the SDP8406 phototran sistor and the SDP8106 photodarlington. ORDER AND SPECIFICATION GUIDE
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SEP8506IRED,
SDP8406
SDP8106
HOA1872-11
HOA1872-12
HOA1872-13
HOA1873-11
HOA1873-12
HOA1873-13
HOA1874-11
HOA-1882-12
HOA1874-12
HOA1879-15
HOA1879-11
D 400 transistor
HOA1882-12
transistor
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SEP8526
Abstract: sep8526-002 diode honeywell
Text: b7E » • 4SS1Û30 001bb7S MOT « H O N l HONEYWELL INC/ MICRO SEP8526 GaAs Infrared Emitting Diode FEATURES • Side-emitting package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106
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OCR Scan
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001bb7S
SEP8526
SDP8406/8426
SDP8106
SDP8000/8600
SEP8526
0Dlbb77
SDP8426
sep8526-002
diode honeywell
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PDF
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transistor
Abstract: HOA1873-13 HOA1884-12 HOA1882-12 HOA1874-12 HOA-1882-12 HOA1872-12 HOA1878-13 HOA1872-13 HOA1882-11
Text: HONEYWELL INC/ MICRO Assemblies 41E J> 4551030 0013fl7b 3 •H0N1 Transmissive With Plastic Encapsulated Components The assemblies on this page are based on SEP8506 IRED, the SDP8406 phototran sistor and the SDP8106 photodarlington. ORDER AND SPECIFICATION GUIDE
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OCR Scan
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45S1A30
0013fl
SEP8506
SDP8406
SDP8106
HOA1872-11
HOA1872-12
HOA1872-13
HOA1873-11
HOA1873-12
transistor
HOA1873-13
HOA1884-12
HOA1882-12
HOA1874-12
HOA-1882-12
HOA1878-13
HOA1882-11
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