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    SEP8706 Search Results

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    SEP8706 Price and Stock

    Honeywell Sensing and Control SEP8706-003

    EMITTER IR 880NM 50MA RADIAL
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    Quest Components SEP8706-003 63
    • 1 $4.74
    • 10 $3.476
    • 100 $3.16
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    Honeywell Sensing and Control SEP8706-002

    EMITTER IR 880NM 50MA RADIAL
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    Verical SEP8706-002 5,489 51
    • 1 $1.23
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    SEP8706-002 1,075 50
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    Newark SEP8706-002 Bulk 1
    • 1 $1.43
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    Onlinecomponents.com SEP8706-002 6,574
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    Chip 1 Exchange SEP8706-002 7,135
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    Master Electronics SEP8706-002 6,574
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    Honeywell Sensing and Control SEP8706-001

    EMITTER IR 880NM 50MA RADIAL
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    Verical SEP8706-001 2,190 10
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    • 10 $10.8062
    • 100 $5.4353
    • 1000 $5.0545
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    SEP8706-001 290 16
    • 1 $4.07
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    • 100 $3.76
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    Newark SEP8706-001 Bulk 1
    • 1 $6.17
    • 10 $4.89
    • 100 $4.02
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    Onlinecomponents.com SEP8706-001 2,482
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    Master Electronics SEP8706-001 2,482
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    • 100 $4.37
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    Honeywell Sensing and Control / MICRO SWITCH SEP8706-215

    Infrared Emitters
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    Honeywell Sensing and Control / MICRO SWITCH SEP8706-117

    Infrared Emitters INFRARED SENSORS
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    SEP8706 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SEP8706 Honeywell AlGaAs Infrared Emitting Diode Original PDF
    SEP8706-001 Honeywell Infrared, UV, Visible Emitters, Optoelectronics, DIODE IR EMITTING AIGAAS SIDELK Original PDF
    SEP8706-002 Honeywell Infrared, UV, Visible Emitters, Optoelectronics, DIODE IR EMITTING AIGAAS SIDELK Original PDF
    SEP8706-003 Honeywell SEP Series AlGaAs Infrared Emitting Diode, Side-emitting Plastic Package Original PDF
    SEP8706-003 Honeywell Infrared, UV, Visible Emitters, Optoelectronics, DIODE IR EMITTING AIGAAS SIDELK Original PDF

    SEP8706 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    phototransistor npn

    Abstract: simple phototransistor SEP8506-003 high sensitivity reflective phototransistor phototransistor 600 nm phototransistor datasheet SDP8476 SEP8706 SDP8476-201 SEP8506
    Text: SDP8476-201 Low Light Rejection Phototransistor FEATURES • Side-looking plastic package • Low light level immunity • 50¡ nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes INFRA-21.TIF


    Original     		PDF SDP8476-201 SEP8506 SEP8706 INFRA-21 SDP8476 SEP8506-003 45mW/cm 90mW/cm phototransistor npn simple phototransistor high sensitivity reflective phototransistor phototransistor 600 nm phototransistor datasheet SDP8476-201

    silicon photodiode

    Abstract: SDP8276 SEP8506 SEP8706 fast photodiode spectrally matched photodiode
    Text: SDP8276 Silicon Photodiode FEATURES • Side-looking plastic package • Linear response • Fast response time • Internal visible light rejection filter • 50¡ nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes


    Original     		PDF SDP8276 SEP8506 SEP8706 INFRA-79 SDP8276 silicon photodiode fast photodiode spectrally matched photodiode

    Untitled

    Abstract: No abstract text available
    Text: Datasheet - SEP8706-002 SEP8706-002 SEP Series AlGaAs Infrared Emitting Diode, Side-emitting Plastic Package Representative photograph, actual product appearance may vary. Features ● ● ● ● Due to regional agency approval requirements, some products may not be


    Original     		PDF SEP8706-002 SDP8406 SDP8106 SDP8000/8600 SEP8706 20and 20Settings/rabab/Desktop/Datasheet 20SEP8706-002

    SDP8106

    Abstract: SEP8506 SEP8706
    Text: SDP8106 Silicon Photodarlington FEATURES • Side-looking plastic package • 50¡ nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes INFRA-79.TIF DESCRIPTION The SDP8106 is an NPN silicon photodarlington


    Original     		PDF SDP8106 SEP8506 SEP8706 INFRA-79 SDP8106

    all datasheet phototransistor

    Abstract: Infrared Phototransistor SDP8406 SEP8506 SEP8706
    Text: 17 September 1997 SDP8406 Silicon Phototransistor FEATURES • Side-looking plastic package • 50¡ nominal acceptance angle • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes INFRA-21.TIF


    Original     		PDF SDP8406 SEP8506 SEP8706 INFRA-21 SDP8406 SEP8506 all datasheet phototransistor Infrared Phototransistor

    SDP8106

    Abstract: SEP8506 SEP8706 Photodarlington
    Text: 17 September 1997 SDP8106 Silicon Photodarlington FEATURES • Side-looking plastic package • 50¡ nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes INFRA-79.TIF DESCRIPTION The SDP8106 is an NPN silicon photodarlington molded


    Original     		PDF SDP8106 SEP8506 SEP8706 INFRA-79 SDP8106 Photodarlington

    SDP8406

    Abstract: SDP8406-004 SDP8406-001 SDP8406-002 SDP8406-003 SEP8706
    Text: SDP8406 Silicon Phototransistor INFRA-21.TIF FEATURES • Side-looking plastic package • 50° nominal acceptance angle • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8506/8526 and SEP8706 infrared emitting diodes OUTLINE DIMENSIONS in inches (mm)


    Original     		PDF SDP8406 INFRA-21 SEP8506/8526 SEP8706 INFRA-17 SDP8406 SEP8506 INFRA-31 SDP8406-004 SDP8406-001 SDP8406-002 SDP8406-003

    SEP8706-003

    Abstract: SEP8706 SEP8706-001 SDP8106 SEP8706-002
    Text: SEP8706 AlGaAs Infrared Emitting Diode INFRA-20.TIF FEATURES • Side-emitting plastic package • 50° nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive current • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106


    Original     		PDF SEP8706 INFRA-20 SDP8406/8426 SDP8106 SDP8000/8600 INFRA-71 SEP8706 INFRA130 SEP8706-003 SEP8706-001 SDP8106 SEP8706-002

    phototransistor application circuit

    Abstract: npn phototransistor phototransistor npn all datasheet phototransistor SDP8476 simple phototransistor Infrared Phototransistor phototransistor 600 nm SDP8476-201 SEP8506-003
    Text: 17 September 1997 SDP8476-201 Low Light Rejection Phototransistor FEATURES • Side-looking plastic package • Low light level immunity • 50¡ nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes


    Original     		PDF SDP8476-201 SEP8506 SEP8706 INFRA-21 SDP8476 SEP8506-003 45mW/cm2 90mW/cm2 phototransistor application circuit npn phototransistor phototransistor npn all datasheet phototransistor simple phototransistor Infrared Phototransistor phototransistor 600 nm SDP8476-201

    SEP8706

    Abstract: Infrared Emitting Diode SDP8106 SDP8406 SDP8000
    Text: 17 September 1997 SEP8706 AlGaAs Infrared Emitting Diode FEATURES • Side-looking plastic package • 50¡ nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to


    Original     		PDF SEP8706 SDP8406 SDP8106 SDP8000/8600 INFRA-20 SEP8706 Infrared Emitting Diode SDP8106 SDP8000

    SDP8276

    Abstract: silicon photodiode SEP8506 SEP8706 fast photodiode spectrally matched photodiode
    Text: 17 September 1997 SDP8276 Silicon Photodiode FEATURES • Side-looking plastic package • Linear response • Fast response time • Internal visible light rejection filter • 50¡ nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes


    Original     		PDF SDP8276 SEP8506 SEP8706 INFRA-79 SDP8276 silicon photodiode fast photodiode spectrally matched photodiode

    SDP8106

    Abstract: SDP8406 SEP8706
    Text: SEP8706 AlGaAs Infrared Emitting Diode FEATURES • Side-looking plastic package • 50¡ nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106


    Original     		PDF SEP8706 SDP8406 SDP8106 SDP8000/8600 INFRA-20 SEP8706 SDP8106

    SDP8406

    Abstract: SEP8506 SEP8706
    Text: SDP8406 Silicon Phototransistor FEATURES • Side-looking plastic package • 50¡ nominal acceptance angle • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes INFRA-21.TIF DESCRIPTION The SDP8406 is an NPN silicon phototransistor molded


    Original     		PDF SDP8406 SEP8506 SEP8706 INFRA-21 SDP8406 SEP8506

    SEP8706

    Abstract: No abstract text available
    Text: Datasheet - SEP8706-003 SEP8706-003 SEP Series AlGaAs Infrared Emitting Diode, Side-emitting Plastic Package Representative photograph, actual product appearance may vary. Features ● ● ● ● Due to regional agency approval requirements, some products may not be


    Original     		PDF SEP8706-003 SDP8406 SDP8106 SDP8000/8600 SEP8706 20and 20Settings/rabab/Desktop/Datasheet 20SEP8706-003

    Untitled

    Abstract: No abstract text available
    Text: SEP8706 AIGaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50° nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive current • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106


    OCR Scan     		PDF SEP8706 SDP8406/8426 SDP8106 SDP8000/8600 SEP8706 SDP8406

    Untitled

    Abstract: No abstract text available
    Text: SDP8106 Silicon Photodarlington FEATURES • Side-looking plastic package . 50° nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes DESCRIPTION OUTLINE DIMENSIONS in inches (mm) The SDP8106 is an NPN silicon photodarlington


    OCR Scan     		PDF SDP8106 SEP8506 SEP8706 SDP8106 JJ11IL+

    8276 m

    Abstract: P8276
    Text: SDP8276 Silicon Photodiode FEA TU R E S • Side-looking plastic package • Linear response • Fast response tim e • Internal visible light rejection filter • 50° nom inal a cceptance angle • M echanically and spectrally m atched to S EP 8506 and SEP8706 infrared em itting diodes


    OCR Scan     		PDF SDP8276 SEP8706 8276 m P8276

    Untitled

    Abstract: No abstract text available
    Text: SDP8476-201 Low Light Rejection Phototransistor FEATURES • Side-looking plastic package • Low light level immunity • 50° nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes tei&r *i i .r


    OCR Scan     		PDF SDP8476-201 SEP8506 SEP8706 SDP8476 SEP8506-003 45mW/cm2 90mW/cma

    Untitled

    Abstract: No abstract text available
    Text: SDP8106 Silicon Photodarlington FEATURES • Side-looking plastic package • 50° nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes DESCRIPTION The SDP8106 is an NPN silicon photodarlington


    OCR Scan     		PDF SDP8106 SEP8506 SEP8706 SDP8106 f1000

    phototransistor 650 nm

    Abstract: No abstract text available
    Text: SDP8406 Silicon Phototransistor FEATURES • Side-looking plastic package • 50° nominal acceptance angle • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8506/8526 and SEP8706 infrared emitting diodes «•flfSr ■ mFï ’ 5, '


    OCR Scan     		PDF SDP8406 SEP8506/8526 SEP8706 SDP8406 SEP8506 phototransistor 650 nm

    R840

    Abstract: NFRA-20-TIF
    Text: SEP8706 AIGaAs Infrared Emitting Diode FEATURES • Side-looking plastic package • 50° nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106


    OCR Scan     		PDF SEP8706 SDP8406 SDP8106 SDP8000/8600 NFRA-20-TIF SEP8706 R840 NFRA-20-TIF

    SDP8276

    Abstract: SEP8506 SEP8706
    Text: SDP8276 Silicon Photodiode FEATURES • Side-looking plastic package • Linear response • Fast response time • Internal visible light rejection filter • 50° nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes


    OCR Scan     		PDF SDP8276 SEP8506 SEP8706 SDP8276 45S1A30 002E523

    Untitled

    Abstract: No abstract text available
    Text: SDP8476-201 Low Light Rejection Phototransistor FEATURES . Side-looking plastic package • Low light level immunity • 50° nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes INFRA-21.TIF DESCRIPTION


    OCR Scan     		PDF SDP8476-201 SEP8506 SEP8706 INFRA-21 SDP8476 SEP8506-003 45mW/cm! 90mW/cm2

    Untitled

    Abstract: No abstract text available
    Text: SEP8706 AIGaAs Infrared Emitting Diode FEATURES • Side-looking plastic package • 50° nominal beam angle • 880 nm wavelength » Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106


    OCR Scan     		PDF SEP8706 SDP8406 SDP8106 SDP8000/8600 SEP8706 G0224T4