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    Infrared Phototransistor

    Abstract: infrared diode Infrared Emitting Diode SDP8106 SDP8406 SEP8506
    Text: 17 September 1997 SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50¡ nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series


    Original     		PDF SEP8506 SDP8406 SDP8106 SDP8000/8600 INFRA-20 SEP8506 Infrared Phototransistor infrared diode Infrared Emitting Diode SDP8106

    SEP8506

    Abstract: SDP8000 SDP8406 SDP8106
    Text: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50¡ nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger


    Original     		PDF SEP8506 SDP8406 SDP8106 SDP8000/8600 INFRA-20 SEP8506 SDP8000 SDP8106

    SEP8506-001

    Abstract: SEP8506-002 SEP8506-003 SDP8106 SEP8506 infra red diode
    Text: SEP8506 GaAs Infrared Emitting Diode INFRA-20.TIF FEATURES • Side-emitting plastic package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt


    Original     		PDF SEP8506 INFRA-20 SDP8406/8426 SDP8106 SDP8000/8600 INFRA-71 SEP8506 INFRA130 SEP8506-001 SEP8506-002 SEP8506-003 SDP8106 infra red diode

    Untitled

    Abstract: No abstract text available
    Text: Datasheet - SEP8706-002 SEP8706-002 SEP Series AlGaAs Infrared Emitting Diode, Side-emitting Plastic Package Representative photograph, actual product appearance may vary. Features ● ● ● ● Due to regional agency approval requirements, some products may not be


    Original     		PDF SEP8706-002 SDP8406 SDP8106 SDP8000/8600 SEP8706 20and 20Settings/rabab/Desktop/Datasheet 20SEP8706-002

    dual Phototransistor mouse

    Abstract: quadrature mouse phototransistor HLC2705 HLC2705-001 mouse Phototransistor SE5455-003 SE5470-004 hlc led MOUSE ENCODER output SE3455-003
    Text: 1739-2012:QuarkCatalogTempNew 9/17/12 4:46 PM Page 1739 20 Emitters and Sensors RoHS Metal Package ᭤ Temperature Range: –55°C to +125°C ᭤ Miniature, Hermetically Sealed, Metal Can Package SE2460-003, SE2470-002 ᭤ Ideal for High Pulsed Current Applications (SE3455-001,


    Original     		PDF SE2460-003, SE2470-002) SE3455-001, SE5455-003, SE5470-004, SE3470-003) SE2470-002 dual Phototransistor mouse quadrature mouse phototransistor HLC2705 HLC2705-001 mouse Phototransistor SE5455-003 SE5470-004 hlc led MOUSE ENCODER output SE3455-003

    SEP8706-003

    Abstract: SEP8706 SEP8706-001 SDP8106 SEP8706-002
    Text: SEP8706 AlGaAs Infrared Emitting Diode INFRA-20.TIF FEATURES • Side-emitting plastic package • 50° nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive current • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106


    Original     		PDF SEP8706 INFRA-20 SDP8406/8426 SDP8106 SDP8000/8600 INFRA-71 SEP8706 INFRA130 SEP8706-003 SEP8706-001 SDP8106 SEP8706-002

    SEP8506-001

    Abstract: SDP8106 SDP8406 SEP8506 SDP8000
    Text: Datasheet - SEP8506-001 SEP8506-001 SEP Series GaAs Infrared Emitting Diode, Side-emitting Plastic Package Representative photograph, actual product appearance may vary. Features ● ● ● ● Due to regional agency approval requirements, some products may not be


    Original     		PDF SEP8506-001 SDP8406 SDP8106 SDP8000/8600 SEP8506 20and 20Settings/rabab/Desktop/Datasheet 20SEP8506-001 SEP8506-001 SDP8406 SDP8000

    SEP8706

    Abstract: Infrared Emitting Diode SDP8106 SDP8406 SDP8000
    Text: 17 September 1997 SEP8706 AlGaAs Infrared Emitting Diode FEATURES • Side-looking plastic package • 50¡ nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to


    Original     		PDF SEP8706 SDP8406 SDP8106 SDP8000/8600 INFRA-20 SEP8706 Infrared Emitting Diode SDP8106 SDP8000

    HOA0963-T51

    Abstract: HOA0973-N55 SD5421-002 HOA0961-N51 SDP8004-301 HOA1879-012 HOA0973-N51 HOA0973N51 HOA2001-001 SD1420-002
    Text: Sensing and Control ! " = = Sept, 2002 = E-mail:jian.bo.zhou@honeywell.com www.honeywell.com/sensing/ !"#$%& LED mm 1 !" 1 935mm @IF(mA) 2 0.35 0.70 24 24 1.00 0.35 24 24 0.65 1.10 24 24 1.65 0.20 24 24 0.35 0.70 24 24 1.00 0.35 24 24 0.65 1.10 24 18 1.65


    Original     		PDF SE3450-011 SE3450-012 SE3450-013 SE3450-014 SE3455-001 SE3455-002 SE3455-003 SE3455-004 SE3470-001 SE3470-002 HOA0963-T51 HOA0973-N55 SD5421-002 HOA0961-N51 SDP8004-301 HOA1879-012 HOA0973-N51 HOA0973N51 HOA2001-001 SD1420-002

    SDP8106

    Abstract: SDP8406 SEP8706
    Text: SEP8706 AlGaAs Infrared Emitting Diode FEATURES • Side-looking plastic package • 50¡ nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106


    Original     		PDF SEP8706 SDP8406 SDP8106 SDP8000/8600 INFRA-20 SEP8706 SDP8106

    HOA1395

    Abstract: dual Phototransistor mouse ACTIVE INFRARED MOTION DETECTOR TO46 lens phototransistor mouse Optical tachometer IR SENSOR wheel mouse HOA2498 HOA0149 HLC2705 mouse photodetector se3470
    Text: Infrared Sensors Line Guide Solid, sensitive solutions. Optoelectronics integrates optical principles and semi-conductor electronics — the inter-conversion of electricity to light. In electronic systems where feedback and control systems are common, these infrared sensors are often


    Original     		PDF 006494-5-EN HOA1395 dual Phototransistor mouse ACTIVE INFRARED MOTION DETECTOR TO46 lens phototransistor mouse Optical tachometer IR SENSOR wheel mouse HOA2498 HOA0149 HLC2705 mouse photodetector se3470

    SDP8000

    Abstract: SEP8506-003 SDP8106 SDP8406 SEP8506
    Text: Datasheet - SEP8506-003 SEP8506-003 SEP Series GaAs Infrared Emitting Diode, Side-emitting Plastic Package Representative photograph, actual product appearance may vary. Features ● ● ● ● Due to regional agency approval requirements, some products may not be


    Original     		PDF SEP8506-003 SDP8406 SDP8106 SDP8000/8600 SEP8506 20and 20Settings/rabab/Desktop/Datasheet 20SEP8506-003 SDP8000 SEP8506-003 SDP8406

    SEP8506-002

    Abstract: SDP8106 SDP8406 SEP8506 infrared emitting diode
    Text: Datasheet - SEP8506-002 SEP8506-002 SEP Series GaAs Infrared Emitting Diode, Side-emitting Plastic Package Representative photograph, actual product appearance may vary. Features ● ● ● ● Due to regional agency approval requirements, some products may not be


    Original     		PDF SEP8506-002 SDP8406 SDP8106 SDP8000/8600 SEP8506 20and 20Settings/rabab/Desktop/Datasheet 20SEP8506-002 SEP8506-002 SDP8406 infrared emitting diode

    SEP8706

    Abstract: No abstract text available
    Text: Datasheet - SEP8706-003 SEP8706-003 SEP Series AlGaAs Infrared Emitting Diode, Side-emitting Plastic Package Representative photograph, actual product appearance may vary. Features ● ● ● ● Due to regional agency approval requirements, some products may not be


    Original     		PDF SEP8706-003 SDP8406 SDP8106 SDP8000/8600 SEP8706 20and 20Settings/rabab/Desktop/Datasheet 20SEP8706-003

    SDP8000

    Abstract: No abstract text available
    Text: SEP8706-001 SEP Series AlGaAs Infrared Emitting Diode, Side-emitting Plastic Package Representative photograph, actual product appearance may vary. Features ● ● ● ● Due to regional agency approval requirements, some products may not be available in your area.


    Original     		PDF SEP8706-001 SDP8406 SDP8106 SDP8000/8600 SEP8706 SDP8000

    Untitled

    Abstract: No abstract text available
    Text: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package . 50“ nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger


    OCR Scan     		PDF SEP8506 SDP8406 SDP8106 SDP8000/8600 SEP8506

    SEP8506-002

    Abstract: No abstract text available
    Text: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt


    OCR Scan     		PDF SEP8506 SDP8406/8426 SDP8106 SDP8000/8600 SEP8506 SDP8406 SEP8506-002

    Untitled

    Abstract: No abstract text available
    Text: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger


    OCR Scan     		PDF SEP8506 SDP8406 SDP8106 SDP8000/8600 INFRA-20 SEP8506 SEP8506---

    Untitled

    Abstract: No abstract text available
    Text: SEP8526 GaAs Infrared Emitting Diode FEATURES • Side-emitting package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger


    OCR Scan     		PDF SEP8526 SDP8406/8426 SDP8106 SDP8000/8600 SEP8526 SDP8426

    sep8526-002

    Abstract: No abstract text available
    Text: SEP8526 GaAs Infrared Emitting Diode FEATURES • Side-emitting package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger


    OCR Scan     		PDF SEP8526 SDP8406/8426 SDP8106 SDP8000/8600 SEP8526 SDP8426 sep8526-002

    diameter glass lens phototransistor

    Abstract: No abstract text available
    Text: SE3470/5470 AlGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° ' nominal beam angle option • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents


    OCR Scan     		PDF SE3470/5470 125aC) SD3421/5421 SD3443/5443/5491 SD3410/54 SD5600 SE3470/5470 SE3470 SE5470 SDP8406 diameter glass lens phototransistor

    Untitled

    Abstract: No abstract text available
    Text: SEP8706 AIGaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50° nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive current • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106


    OCR Scan     		PDF SEP8706 SDP8406/8426 SDP8106 SDP8000/8600 SEP8706 SDP8406

    R840

    Abstract: NFRA-20-TIF
    Text: SEP8706 AIGaAs Infrared Emitting Diode FEATURES • Side-looking plastic package • 50° nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106


    OCR Scan     		PDF SEP8706 SDP8406 SDP8106 SDP8000/8600 NFRA-20-TIF SEP8706 R840 NFRA-20-TIF

    Untitled

    Abstract: No abstract text available
    Text: SEP8706 AIGaAs Infrared Emitting Diode FEATURES • Side-looking plastic package • 50° nominal beam angle • 880 nm wavelength » Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106


    OCR Scan     		PDF SEP8706 SDP8406 SDP8106 SDP8000/8600 SEP8706 G0224T4