P8706
Abstract: SEP8526
Text: SDP8426 Silicon Phototransistor FEATURES • Side-looking plastic package • 50° nominal acceptance angle • Mechanically and spectrally matched to SEP8506/8526 and SE P8706 infrared emitting diodes DESCRIPTION OUTLINE DIMENSIONS in inches (mm) The SDP8426 is an N PN silicon phototransistor molded
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SDP8426
SEP8506/8526
P8706
SDP8426
SEP8526
SEP8526
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SDP8426
Abstract: DG10C
Text: SDP8426 Silicon Phototransistor FEATURES • Side-looking plastic package • 50° nominal acceptance angle • Mechanically and spectrally matched to SEP8506/8526 and SEP8706 infrared emitting diodes DESCRIPTION The SDP8426 is an NPN silicon phototransistor molded
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SDP8426
SEP8506/8526
SEP8706
SDP8426
DG10C
SEP8526
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TIL149
Abstract: HOA708-1 S-180-a55 SPX2862 HS-230-40W HOA708 SLOTTED OPTICAL SWITCH HOA1160 h0a2001 A11W
Text: ¿£i^±=<.-=is=a. L FASCO INDS/ Part Number SENISYS Replaced By 40E D 3411736 ^ Part Number Replaces ÜQQ1 3 3 Ô By CLI800 . S-870-T55 C L I8 0 0 A . S-875-T55 C L I8 0 0 M . S-870-N55 C L I8 0 0 M A .S-875-N55
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GQ133Ã
CLA60.
C-101-C
CLA60AA
C-101-B
CLA60AB
C-101-A
CLA65.
C-102
CLA65AA
TIL149
HOA708-1
S-180-a55
SPX2862
HS-230-40W
HOA708
SLOTTED OPTICAL SWITCH
HOA1160
h0a2001
A11W
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Untitled
Abstract: No abstract text available
Text: SEP8526 GaAs Infrared Emitting Diode FEATURES • Side-emitting package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger
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SEP8526
SDP8406/8426
SDP8106
SDP8000/8600
SEP8526
SDP8426
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sep8526-002
Abstract: No abstract text available
Text: SEP8526 GaAs Infrared Emitting Diode FEATURES • Side-emitting package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger
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SEP8526
SDP8406/8426
SDP8106
SDP8000/8600
SEP8526
SDP8426
sep8526-002
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TRANSISTOR K 135
Abstract: SDP8405-14 transistor pt 42 transistor SDP8405-13 TRANSISTOR GUIDE transistor 650 SDP8426-2
Text: HONEYUlELL I N C / MICRO MIE D • 4551Ö30 QOlBfibT b Plastic Encapsulated Sensors Saturation voltage values are measured at approximately 25% of the minimum specified light current for each device; typical values are 0.3 V for phototransistors, and 1.0 V for photodarlingtons.
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SDP8405-1
SDP8405-2
SDP8405-3
SDP8405-11
SDP8405-12
SDP8405-13
SDP8405-14
SDP8425-1
SDP8425-2
SDP8106-1
TRANSISTOR K 135
transistor pt 42
transistor
TRANSISTOR GUIDE
transistor 650
SDP8426-2
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SEP8526
Abstract: sep8526-002 diode honeywell
Text: b7E » • 4SS1Û30 001bb7S MOT « H O N l HONEYWELL INC/ MICRO SEP8526 GaAs Infrared Emitting Diode FEATURES • Side-emitting package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106
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001bb7S
SEP8526
SDP8406/8426
SDP8106
SDP8000/8600
SEP8526
0Dlbb77
SDP8426
sep8526-002
diode honeywell
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