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TT Electronics Power and Hybrid / Semelab Limited BUZ900P N Channel Mosfet, 160V, 8A, To-247; Channel Type:N Channel; Drain Source Voltage Vds:160V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:-; Gate Source Threshold Voltage Max:1.5V; Msl:- Rohs Compliant: Yes \|Tt Electronics/semelab BUZ900P
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BUZ900P Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BUZ900P		Magnatec	N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.		Original	PDF
BUZ900P		Magnatec	N-channel power MOSFET for audio applications, 160V		Original	PDF
BUZ900P		Magnatec	N-Channel Power Mosfet		Scan	PDF
BUZ900P		Unknown	Shortform Datasheet & Cross References Data		Short Form	PDF

BUZ900P Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: BUZ900P Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)160 V(BR)GSS (V) I(D) Max. (A)8.0# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)-55	Original	BUZ900P	PDF
Untitled Abstract: No abstract text available Text: BUZ900P BUZ901P MAGNA TEC MECHANICAL DATA Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 N–CHANNEL POWER MOSFET 20.80 (0.819) 21.46 (0.845) POWER MOSFETS FOR AUDIO APPLICATIONS 4.50	Original	BUZ900P BUZ901P	PDF
BUZ901P Abstract: BUZ900P BUZ900 BUZ906P BUZ901 BUZ905P 125W3 Text: BUZ900P BUZ901P MAGNA TEC MECHANICAL DATA Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 N–CHANNEL POWER MOSFET 20.80 (0.819) 21.46 (0.845) POWER MOSFETS FOR AUDIO APPLICATIONS 4.50	Original	BUZ900P BUZ901P BUZ901P BUZ900P BUZ900 BUZ906P BUZ901 BUZ905P 125W3	PDF
BUZ901P Abstract: BUZ900P BUZ900 buz90a d44c3 buz94 BUZ77 BUZ345 DTS107 DTS410 Text: STI Type: BUZ341 Notes: Breakdown Voltage: 200 Continuous Current: 33 RDS on Ohm: 0.07 Trans Conductance Mhos: 15 Trans Conductance A: 21 Gate Threshold min: 2.1 Gate Threshold max: 4.0 Resistance Switching ton: 60 Resistance Switching toff: 680 Resistance Switching ID: 3.0	Original	BUZ341 O-247 BUZ344 BUZ346 O-204AA/TO-3: DTS409 DTS410 BUZ901P BUZ900P BUZ900 buz90a d44c3 buz94 BUZ77 BUZ345 DTS107 DTS410	PDF
BUZ900P Abstract: BUZ901P BUZ906 BUZ905P BUZ901 BUZ905 BUZ906P Text: BUZ905P BUZ906P MAGNA TEC MECHANICAL DATA Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 P–CHANNEL POWER MOSFET 20.80 (0.819) 21.46 (0.845) POWER MOSFETS FOR AUDIO APPLICATIONS 4.50	Original	BUZ905P BUZ906P PR000 BUZ900P BUZ901P BUZ906 BUZ905P BUZ901 BUZ905 BUZ906P	PDF
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor	PDF
BZX85C12V Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes	Original	DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E	PDF
BUZ900 Abstract: BUZ900P TO-3P BUZ900D BUZ902DP to-3 BUZ908DP BUZ901P BUZ905 SOT-227 Text: Magnatec. Мощные комплиментарные полевые транзисторы для аудио техники Компания Magnatec является подразделением Semelab Официальный дистрибьютор SEMELAB в России - компания АПЕКС.	Original	BUZ900 BUZ901 BUZ900D BUZ901D BUZ900P BUZ901P BUZ900DP BUZ901DP BUZ900X4S BUZ901X4S BUZ900 BUZ900P TO-3P BUZ900D BUZ902DP to-3 BUZ908DP BUZ901P BUZ905 SOT-227	PDF
Untitled Abstract: No abstract text available Text: BUZ905P BUZ906P MAGNA TEC MECHANICAL DATA Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 P–CHANNEL POWER MOSFET 20.80 (0.819) 21.46 (0.845) POWER MOSFETS FOR AUDIO APPLICATIONS 4.50	Original	BUZ905P BUZ906P	PDF
BUZ900P Abstract: L01A BUZ901P 8uz90 BUZ901 BUZ905P BUZ906P Text: <\ BUZ900P BUZ901P IIVI/VGIMA 't e c MECHANICAL DATA N-CHANNEL POWER MOSFET Dimensions in mm inches 1 5 .4 9 (0 6 1 0 ) 16 2 6 (0 6 4 0 ) POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED	OCR Scan	BUZ900P BUZ901P BUZ905P BUZ906P L01A BUZ901P 8uz90 BUZ901 BUZ905P BUZ906P	PDF
BUZ900D Abstract: BUZ50ASM BUZ50B-220SM Text: SEMELAB pic Type_No BUZ45A BUZ46 BUZ50A BUZ50A-220M BUZ50A-220SM BUZ50A-220TM BUZ50A-T0220M BUZ50ASM BUZ50B BUZ50B-220M BUZ50B-220SM BUZ50B-T0220M BUZ50BSM BUZ60 BUZ60B BUZ63 BUZ64 BUZ71 BUZ71A BUZ72A BUZ74 BUZ74A BUZ76 BUZ84 BUZ900 BUZ900D BUZ900DP BUZ900P	OCR Scan	BUZ45A BUZ46 BUZ50A BUZ50A-220M BUZ50A-220SM BUZ50A-220TM BUZ50A-T0220M BUZ50ASM BUZ50B BUZ50B-220M BUZ900D BUZ50B-220SM	PDF
NO10V Abstract: buz901 buz906p BUZ901P Text: BUZ900P BUZ901P M E C H A N IC A L DATA N-CHANNEL POWER MOSFET Dimensions in mm inches 4.69 (0.185) 5.31 (0.209) 1.49 2.49 * 15.49(0.610) 16.26 a oc in e /n i (0.640) (0.059) (0.098) POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING	OCR Scan	BUZ900P BUZ901P BUZ905P BUZ906P Z900P Z901P NO10V buz901 buz906p BUZ901P	PDF
HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET Abstract: 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D Text: M A G IMA r^ T E C BUZ 900D BUZ 9 0 1 D NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SW ITCHING N - CHANNEL POWER MOSFET SEMEFAB DESIG NED AND DIFFUSED	OCR Scan	BUZ905D BUZ906D -100mA -160V -200V HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D	PDF
Untitled Abstract: No abstract text available Text: bOE » • 0133107 00ÜD53b SEMELAB PLC TOT ■ S f l L B prpr M A G N A TEC BUZ 9 00 P NEW PRODUCT b u z s g ip SILICON IM-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICATION FEATURES • • •	OCR Scan	BUZ905P BUZ906P O-247	PDF

BUZ901P Abstract: buz900p BUZ906P Text: BUZ905P BUZ906P M ECHANICAL DATA Dim ensions in mm inches 4.69 (0.185) 5.31 (0.209) 1.49 2.49 P-CHANNEL POWER MOSFET 15.49(0.610) * 16.26 a o c i(0.640) ne/ni (0.059) (0.098) POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P-CHANNEL POWER MOSFET	OCR Scan	BUZ905P BUZ906P BUZ900P BUZ901P -160V BUZ901P buz900p BUZ906P	PDF