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    TT Electronics Power and Hybrid / Semelab Limited BUZ901D

    N Channel Mosfet, 200V, 16A, To-3; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:16A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:-; Gate Source Threshold Voltage Max:1.5V; Msl:- Rohs Compliant: Yes |Tt Electronics/semelab BUZ901D
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark BUZ901D Bulk 1
    • 1 $9.11
    • 10 $8.22
    • 100 $6.51
    • 1000 $5.27
    • 10000 $5.27
    		Buy Now

    TT Electronics Power and Hybrid / Semelab Limited BUZ901P

    N Channel Mosfet, 200V, 8A, To-247; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:-; Gate Source Threshold Voltage Max:1.5V; Msl:- Rohs Compliant: Yes |Tt Electronics/semelab BUZ901P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark BUZ901P Bulk 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    BUZ901 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUZ901 Magnatec N-channel power MOSFET for audio applications, 200V Original PDF
    BUZ901 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUZ901D Magnatec N-CHANNEL POWER MOSFET Original PDF
    BUZ901D Magnatec Silicon N-Channel Power Mosfet Scan PDF
    BUZ901D Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUZ901DP Magnatec N-CHANNEL POWER MOSFET Original PDF
    BUZ901DP Magnatec N-CHANNEL POWER MOSFET Original PDF
    BUZ901P Magnatec N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V. Original PDF
    BUZ901P Magnatec N-channel power MOSFET for audio applications, 200V Original PDF
    BUZ901P Magnatec N-Channel Power Mosfet Scan PDF
    BUZ901P Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUZ901X4S Magnatec N-CHANNEL POWER MOSFET Original PDF

    BUZ901 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BUZ900D

    Abstract: BUZ901D BUZ905d equivalent BUZ906D BUZ906d equivalent BUZ905D
    Text: BUZ900D BUZ901D MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 1.50 Typ. Ø 20 M ax. 16.9 ± 0.15 39.0 ± 1.1 30.2 ± 0.15 10.90 ± 0.1 2 11.60 ± 0.3 Ø 1.0 25.0 N–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING


    Original     		BUZ900D BUZ901D BUZ905D BUZ906D BUZ900D BUZ901D BUZ905d equivalent BUZ906D BUZ906d equivalent BUZ905D PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ900D BUZ901D MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 1.50 Typ. Ø 20 M ax. 16.9 ± 0.15 39.0 ± 1.1 30.2 ± 0.15 10.90 ± 0.1 2 11.60 ± 0.3 Ø 1.0 25.0 N–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING


    Original     		BUZ900D BUZ901D BUZ905D BUZ906D PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ901D Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)16.0# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)16.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250# Minimum Operating Temp (øC)-55


    Original     		BUZ901D PDF

    BUZ901

    Abstract: BUZ900 BUZ906 BUZ905
    Text: BUZ900 BUZ901 MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 1.50 Typ. Ø 20 M ax. 16.9 ± 0.15 39.0 ± 1.1 30.2 ± 0.15 10.90 ± 0.1 2 11.60 ± 0.3 Ø 1.0 25.0 N–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING


    Original     		BUZ900 BUZ901 BUZ905 BUZ906 BUZ90125 BUZ901 BUZ900 BUZ906 BUZ905 PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ900P BUZ901P MAGNA TEC MECHANICAL DATA Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 N–CHANNEL POWER MOSFET 20.80 (0.819) 21.46 (0.845) POWER MOSFETS FOR AUDIO APPLICATIONS 4.50


    Original     		BUZ900P BUZ901P PDF

    BUZ901P

    Abstract: BUZ900P BUZ900 BUZ906P BUZ901 BUZ905P 125W3
    Text: BUZ900P BUZ901P MAGNA TEC MECHANICAL DATA Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 N–CHANNEL POWER MOSFET 20.80 (0.819) 21.46 (0.845) POWER MOSFETS FOR AUDIO APPLICATIONS 4.50


    Original     		BUZ900P BUZ901P BUZ901P BUZ900P BUZ900 BUZ906P BUZ901 BUZ905P 125W3 PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ900 BUZ901 MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 1.50 Typ. Ø 20 M ax. 16.9 ± 0.15 39.0 ± 1.1 30.2 ± 0.15 10.90 ± 0.1 2 11.60 ± 0.3 Ø 1.0 25.0 N–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING


    Original     		BUZ900 BUZ901 BUZ905 BUZ906 PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ900X4S BUZ901X4S MAGNA TEC NEW PRODUCT UNDER DEVELOPMENT MECHANICAL DATA Dimensions in mm inches 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) W = 4 .1 (0 .1 6 1 ) 4 .3 (0 .1 6 9 ) H= 4 .8 (0 .1 8 7 ) 4 .9 (0 .1 9 3 ) (4 places) R 4 .0 (0 .1 5 7 ) 4 .2 (0 .1 6 5 )


    Original     		BUZ900X4S BUZ901X4S 100mA PDF

    Magnatec

    Abstract: BUZ900X4S BUZ901X4S power mosfet audio 160V
    Text: BUZ900X4S BUZ901X4S MAGNA TEC NEW PRODUCT UNDER DEVELOPMENT MECHANICAL DATA Dimensions in mm inches 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) W = 4 .1 (0 .1 6 1 ) 4 .3 (0 .1 6 9 ) H= 4 .8 (0 .1 8 7 ) 4 .9 (0 .1 9 3 ) (4 places) R 4 .0 (0 .1 5 7 ) 4 .2 (0 .1 6 5 )


    Original     		BUZ900X4S BUZ901X4S 59Drain 100mA Magnatec BUZ900X4S BUZ901X4S power mosfet audio 160V PDF

    buz901dp

    Abstract: No abstract text available
    Text: BUZ900DP BUZ901DP MAGNA TEC MECHANICAL DATA Dimensions in mm 20.0 N–CHANNEL POWER MOSFET 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 • HIGH SPEED SWITCHING 2.0 2.0 • N–CHANNEL POWER MOSFET 1.0 • SEMEFAB DESIGNED AND DIFFUSED


    Original     		BUZ900DP BUZ901DP BUZ905DP BUZ906DP buz901dp PDF

    BUZ901D

    Abstract: BUZ901DP 100-C1210 BUZ901 BUZ900D BUZ900DP BUZ905DP BUZ906DP High speed double Drain MOSFET A6V14
    Text: BUZ900DP BUZ901DP MAGNA TEC MECHANICAL DATA Dimensions in mm 20.0 N–CHANNEL POWER MOSFET 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 • HIGH SPEED SWITCHING 2.0 2.0 • N–CHANNEL POWER MOSFET 1.0 • SEMEFAB DESIGNED AND DIFFUSED


    Original     		BUZ900DP BUZ901DP BUZ905DP BUZ906DP BUZ901D BUZ901DP 100-C1210 BUZ901 BUZ900D BUZ900DP BUZ905DP BUZ906DP High speed double Drain MOSFET A6V14 PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ901P Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)8.0# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)-55


    Original     		BUZ901P PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ901 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)8.0# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)-55


    Original     		BUZ901 PDF

    BUZ901P

    Abstract: BUZ900P BUZ900 buz90a d44c3 buz94 BUZ77 BUZ345 DTS107 DTS410
    Text: STI Type: BUZ341 Notes: Breakdown Voltage: 200 Continuous Current: 33 RDS on Ohm: 0.07 Trans Conductance Mhos: 15 Trans Conductance A: 21 Gate Threshold min: 2.1 Gate Threshold max: 4.0 Resistance Switching ton: 60 Resistance Switching toff: 680 Resistance Switching ID: 3.0


    Original     		BUZ341 O-247 BUZ344 BUZ346 O-204AA/TO-3: DTS409 DTS410 BUZ901P BUZ900P BUZ900 buz90a d44c3 buz94 BUZ77 BUZ345 DTS107 DTS410 PDF

    BUZ900P

    Abstract: BUZ901P BUZ906 BUZ905P BUZ901 BUZ905 BUZ906P
    Text: BUZ905P BUZ906P MAGNA TEC MECHANICAL DATA Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 P–CHANNEL POWER MOSFET 20.80 (0.819) 21.46 (0.845) POWER MOSFETS FOR AUDIO APPLICATIONS 4.50


    Original     		BUZ905P BUZ906P PR000 BUZ900P BUZ901P BUZ906 BUZ905P BUZ901 BUZ905 BUZ906P PDF

    2SK1058 MOSFET APPLICATION NOTES

    Abstract: BD139 heat sink lm4702 OUTPUT STAGE INFORMATION 2sk1058 2SJ162 2SK1058 specification of 2SK1058 LM4702 BJT BD139 BJT small signal low power BD139 transistor 2sj162
    Text: Introduction How To Choose A MOSFET This application note provides supporting design information regarding National Semiconductor’s newest offering of highperformance, ultra high-fidelity audio amplifier driver ICs. The LM4702 and its derivatives provide a highly reliable, fully


    Original     		LM4702 AN-1645 2SK1058 MOSFET APPLICATION NOTES BD139 heat sink lm4702 OUTPUT STAGE INFORMATION 2sk1058 2SJ162 2SK1058 specification of 2SK1058 BJT BD139 BJT small signal low power BD139 transistor 2sj162 PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ905D BUZ906D MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 1.50 Typ. Ø 20 M ax. 16.9 ± 0.15 39.0 ± 1.1 30.2 ± 0.15 10.90 ± 0.1 2 11.60 ± 0.3 Ø 1.0 25.0 P–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING


    Original     		BUZ905D BUZ906D BUZ900D BUZ901D PDF

    30D40

    Abstract: No abstract text available
    Text: BUZ900 BUZ901 IV I A CB INI A MECHANICAL DATA Dimensions in mm N-CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V • HIGH ENERGY RATING


    OCR Scan     		BUZ900 BUZ901 BUZ905 BUZ906 BUZ901 30D40 PDF

    BUZ900P

    Abstract: L01A BUZ901P 8uz90 BUZ901 BUZ905P BUZ906P
    Text: <\ BUZ900P BUZ901P IIVI/VGIMA 't e c MECHANICAL DATA N-CHANNEL POWER MOSFET Dimensions in mm inches 1 5 .4 9 (0 6 1 0 ) 16 2 6 (0 6 4 0 ) POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED


    OCR Scan     		BUZ900P BUZ901P BUZ905P BUZ906P L01A BUZ901P 8uz90 BUZ901 BUZ905P BUZ906P PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ900DP BUZ901DP M ECHANICAL DATA Dimensions in mm N-CHANNEL POWER MOSFET 5 .C POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V) • HIGH ENERGY RATING


    OCR Scan     		BUZ900DP BUZ901DP BUZ905DP BUZ906DP BUZ900DP PDF

    n-channel 250w power mosfet

    Abstract: No abstract text available
    Text: BUZ900D BUZ901D IVI A CB INI A M ECHANICAL DATA N-CHANNEL POWER MOSFET Dimensions in mm POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V • HIGH ENERGY RATING


    OCR Scan     		BUZ900D BUZ901D BUZ905D BUZ906D BUZ900D n-channel 250w power mosfet PDF

    NO10V

    Abstract: buz901 buz906p BUZ901P
    Text: BUZ900P BUZ901P M E C H A N IC A L DATA N-CHANNEL POWER MOSFET Dimensions in mm inches 4.69 (0.185) 5.31 (0.209) 1.49 2.49 * 15.49(0.610) *16.26 a oc in e /n i (0.640) * (0.059) (0.098) POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING


    OCR Scan     		BUZ900P BUZ901P BUZ905P BUZ906P Z900P Z901P NO10V buz901 buz906p BUZ901P PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ900X4S BUZ901X4S NEW PRODUCT UNDER DEVELOPMENT MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS A ài j Ë* ^ 0.75 (0 .0 3 0 ) 0.85 (0 .0 3 3 ) CO "T to CO FEATURES 1 JJJ J V • HIGH SPEED SWITCHING


    OCR Scan     		BUZ900X4S BUZ901X4S OT227 100mA BUZ901X4S PDF

    HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET

    Abstract: 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D
    Text: M A G IMA r^ T E C BUZ 900D BUZ 9 0 1 D NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SW ITCHING N - CHANNEL POWER MOSFET SEMEFAB DESIG NED AND DIFFUSED


    OCR Scan     		BUZ905D BUZ906D -100mA -160V -200V HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D PDF