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sml BUZ905DP MOS PRODUCT Power Field-Effect Transistor, 16A I(D), 160V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
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ComSIT USA	BUZ905DP		20			1 - 10 - 100 - 1000 - 10000 -	Get Quote

BUZ905DP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
BUZ905DP		Magnatec	P-CHANNEL POWER MOSFET		Original	PDF

BUZ905DP Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BUZ906D Abstract: BUZ906DP BUZ905DP BUZ900DP BUZ906d equivalent BUZ901DP BUZ905D Text: BUZ905DP BUZ906DP MAGNA TEC MECHANICAL DATA Dimensions in mm 20.0 P–CHANNEL POWER MOSFET 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 • HIGH SPEED SWITCHING 2.0 2.0 • P–CHANNEL POWER MOSFET 1.0 • SEMEFAB DESIGNED AND DIFFUSED	Original	PDF	BUZ905DP BUZ906DP BUZ900DP BUZ901DP BUZ906D BUZ906DP BUZ905DP BUZ900DP BUZ906d equivalent BUZ901DP BUZ905D
Untitled Abstract: No abstract text available Text: BUZ905DP BUZ906DP MAGNA TEC MECHANICAL DATA Dimensions in mm 20.0 P–CHANNEL POWER MOSFET 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 • HIGH SPEED SWITCHING 2.0 2.0 • P–CHANNEL POWER MOSFET 1.0 • SEMEFAB DESIGNED AND DIFFUSED	Original	PDF	BUZ905DP BUZ906DP BUZ900DP BUZ901DP
BZX85C12V Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes	Original	PDF	DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
BUZ900 Abstract: BUZ900P TO-3P BUZ900D BUZ902DP to-3 BUZ908DP BUZ901P BUZ905 SOT-227 Text: Magnatec. Мощные комплиментарные полевые транзисторы для аудио техники Компания Magnatec является подразделением Semelab Официальный дистрибьютор SEMELAB в России - компания АПЕКС.	Original	PDF	BUZ900 BUZ901 BUZ900D BUZ901D BUZ900P BUZ901P BUZ900DP BUZ901DP BUZ900X4S BUZ901X4S BUZ900 BUZ900P TO-3P BUZ900D BUZ902DP to-3 BUZ908DP BUZ901P BUZ905 SOT-227
buz901dp Abstract: No abstract text available Text: BUZ900DP BUZ901DP MAGNA TEC MECHANICAL DATA Dimensions in mm 20.0 N–CHANNEL POWER MOSFET 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 • HIGH SPEED SWITCHING 2.0 2.0 • N–CHANNEL POWER MOSFET 1.0 • SEMEFAB DESIGNED AND DIFFUSED	Original	PDF	BUZ900DP BUZ901DP BUZ905DP BUZ906DP buz901dp
BUZ901D Abstract: BUZ901DP 100-C1210 BUZ901 BUZ900D BUZ900DP BUZ905DP BUZ906DP High speed double Drain MOSFET A6V14 Text: BUZ900DP BUZ901DP MAGNA TEC MECHANICAL DATA Dimensions in mm 20.0 N–CHANNEL POWER MOSFET 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 • HIGH SPEED SWITCHING 2.0 2.0 • N–CHANNEL POWER MOSFET 1.0 • SEMEFAB DESIGNED AND DIFFUSED	Original	PDF	BUZ900DP BUZ901DP BUZ905DP BUZ906DP BUZ901D BUZ901DP 100-C1210 BUZ901 BUZ900D BUZ900DP BUZ905DP BUZ906DP High speed double Drain MOSFET A6V14
buz906dp Abstract: No abstract text available Text: BUZ905DP BUZ906DP M ECHANICAL DATA Dimensions in mm P-CHANNEL POWER MOSFET 5 .C POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V) • HIGH ENERGY RATING	OCR Scan	PDF	BUZ905DP BUZ906DP BUZ900DP BUZ901DP buz906dp
HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET Abstract: 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D Text: M A G IMA r^ T E C BUZ 900D BUZ 9 0 1 D NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SW ITCHING N - CHANNEL POWER MOSFET SEMEFAB DESIG NED AND DIFFUSED	OCR Scan	PDF	BUZ905D BUZ906D -100mA -160V -200V HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D
BUZ900D Abstract: BUZ50ASM BUZ50B-220SM Text: SEMELAB pic Type_No BUZ45A BUZ46 BUZ50A BUZ50A-220M BUZ50A-220SM BUZ50A-220TM BUZ50A-T0220M BUZ50ASM BUZ50B BUZ50B-220M BUZ50B-220SM BUZ50B-T0220M BUZ50BSM BUZ60 BUZ60B BUZ63 BUZ64 BUZ71 BUZ71A BUZ72A BUZ74 BUZ74A BUZ76 BUZ84 BUZ900 BUZ900D BUZ900DP BUZ900P	OCR Scan	PDF	BUZ45A BUZ46 BUZ50A BUZ50A-220M BUZ50A-220SM BUZ50A-220TM BUZ50A-T0220M BUZ50ASM BUZ50B BUZ50B-220M BUZ900D BUZ50B-220SM
2SJ56 Abstract: 2SJ50 equivalent 2SJ56 equivalent 2SKI76 BUZ90QP BUZ90I BUZ90IP z901 BUZ90S 2SJ568 Text: Magnatec Engineering Distribution M agnatec - lateral M O S F E T s for the audio m arket M ag n a tec , a co m p an y w ith in th e S e m e la b G ro u p , in tro d u c e s a ran g e o f c o m p le m e n ta ry lateral M O S F E T pow er transistors. Supplied in a range of outlines, the 8/16Amp,	OCR Scan	PDF	8/16Amp, 160/200Voit BUZ900D BUZ90QP BUZ90I Z901/906 2SJ162 2SJ56 2X2SJ56 USPI6N20 2SJ56 2SJ50 equivalent 2SJ56 equivalent 2SKI76 BUZ90I BUZ90IP z901 BUZ90S 2SJ568
Untitled Abstract: No abstract text available Text: BUZ900DP BUZ901DP M ECHANICAL DATA Dimensions in mm N-CHANNEL POWER MOSFET 5 .C POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V) • HIGH ENERGY RATING	OCR Scan	PDF	BUZ900DP BUZ901DP BUZ905DP BUZ906DP BUZ900DP