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    SDRAM CMOS Search Results

    SDRAM CMOS Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    EVKVC66901LCMOS Renesas Electronics Corporation Evaluation Board for 5P49V6901 VersaClock® 6 Visit Renesas Electronics Corporation
    EVKVC55901LCMOS Renesas Electronics Corporation Evaluation Board for 5P49V5901 VersaClock® 5 Visit Renesas Electronics Corporation
    CSPT857CNLG Renesas Electronics Corporation 2.5V - 2.6V PLL Differential 1:10 SDRAM Clock Driver Visit Renesas Electronics Corporation
    CSPT857DPAG Renesas Electronics Corporation 2.5V-2.6V Phase Locked Loop Differential 1:10 SDRAM Clock Driver Visit Renesas Electronics Corporation

    SDRAM CMOS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K4S561632E

    Abstract: K4S560432E K4S560432E-TC K4S560832E
    Text: SDRAM 256Mb E-die x4, x8, x16 CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.4 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 February 2004 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM


    Original     		PDF 256Mb 166MHz 16Bit A10/AP K4S561632E K4S560432E K4S560432E-TC K4S560832E

    K4S280432E

    Abstract: K4S281632E TL 2262 decoder
    Text: SDRAM 128Mb E-die x4, x8, x16 CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.4 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 February. 2004 SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM


    Original     		PDF 128Mb x4/x8/x16 110mA 140mA 166MHz. A10/AP K4S280432E K4S281632E TL 2262 decoder

    K4S643232H

    Abstract: K4S643232
    Text: SDRAM 64Mb H-die x32 CMOS SDRAM 64Mb H-die (x32) SDRAM Specification Revision 1.3 February 2004 *Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.3 February. 2004 SDRAM 64Mb H-die (x32) CMOS SDRAM Revision History


    Original     		PDF A10/AP K4S643232H K4S643232

    K4S280432F

    Abstract: K4S281632F K4S281632F-TC
    Text: SDRAM 128Mb F-die x4, x8, x16 CMOS SDRAM 128Mb F-die SDRAM Specification Revision 1.0 January. 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 January. 2004 SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM


    Original     		PDF 128Mb 110mA 140mA 166MHz. A10/AP K4S280432F K4S281632F K4S281632F-TC

    tcl 14175

    Abstract: 8MB SDRAM K4S641632H-TC K4S640432H-TC K4S640832H K4S641632H
    Text: SDRAM 64Mb H-die x4, x8, x16 CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.4 November 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 November 2003 SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM


    Original     		PDF A10/AP tcl 14175 8MB SDRAM K4S641632H-TC K4S640432H-TC K4S640832H K4S641632H

    Untitled

    Abstract: No abstract text available
    Text: SDRAM 64Mb H-die x4, x8, x16 CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.0 September 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 September 2003 SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM


    Original     		PDF 16Bit A10/AP

    K4S280432F

    Abstract: K4S281632F
    Text: SDRAM 128Mb F-die x4, x8, x16 CMOS SDRAM 128Mb F-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004 SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM


    Original     		PDF 128Mb 110mA 140mA 166MHz. A10/AP K4S280432F K4S281632F

    K4S643232H

    Abstract: No abstract text available
    Text: SDRAM 64Mb H-die x32 CMOS SDRAM 64Mb H-die (x32) SDRAM Specification Revision 1.4 August 2004 *Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.4 August 2004 SDRAM 64Mb H-die (x32) CMOS SDRAM Revision History


    Original     		PDF A10/AP K4S643232H

    K4S161622H-TC60

    Abstract: K4S161622H K4S161622H-TC55 K4S161622H-TC70 K4S161622H-TC80
    Text: SDRAM 16Mb H-die x16 CMOS SDRAM 16Mb H-die SDRAM Specification Revision 1.5 August 2004 Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.5 August 2004 SDRAM 16Mb H-die(x16) CMOS SDRAM Revision History Revision 0.0 (May, 2003)


    Original     		PDF 200MHz. A10/AP K4S161622H-TC60 K4S161622H K4S161622H-TC55 K4S161622H-TC70 K4S161622H-TC80

    K4S280432E

    Abstract: K4S281632E
    Text: SDRAM 128Mb E-die x4, x8, x16 CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.2 May. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 May. 2003 SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM Revision History


    Original     		PDF 128Mb x4/x8/x16 16Bit A10/AP K4S280432E K4S281632E

    Samsung 16M SDRAM B-die

    Abstract: K4S510432B-TC K4S511632B
    Text: SDRAM 512Mb B-die x4, x8, x16 CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.0 July, 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 July, 2003 SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM Revision History


    Original     		PDF 512Mb 16Bit A10/AP Samsung 16M SDRAM B-die K4S510432B-TC K4S511632B

    K4S1G0732B

    Abstract: K4S1G0732B-TC75 RA12
    Text: SDRAM stacked 1Gb B-die x8 CMOS SDRAM stacked 1Gb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004 SDRAM stacked 1Gb B-die (x8) CMOS SDRAM


    Original     		PDF A10/AP K4S1G0732B K4S1G0732B-TC75 RA12

    K4S511632B

    Abstract: K4S510432B-TC
    Text: SDRAM 512Mb B-die x4, x8, x16 CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004 SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM


    Original     		PDF 512Mb 16Bit A10/AP K4S511632B K4S510432B-TC

    K4S641632H

    Abstract: K4S641632H-TC K4S640432H-TC K4S640832H
    Text: SDRAM 64Mb H-die x4, x8, x16 CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.5 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.5 February 2004 SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM


    Original     		PDF A10/AP K4S641632H K4S641632H-TC K4S640432H-TC K4S640832H

    K4S640432H-TC

    Abstract: K4S640832H K4S641632H K4S641632H-TC
    Text: SDRAM 64Mb H-die x4, x8, x16 CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.3 October 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 October 2003 SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM


    Original     		PDF A10/AP K4S640432H-TC K4S640832H K4S641632H K4S641632H-TC

    Untitled

    Abstract: No abstract text available
    Text: SDRAM 128Mb E-die x4, x8, x16 CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.3 January 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 January. 2004 SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM


    Original     		PDF 128Mb x4/x8/x16 110mA 140mA 166MHz. 16Bit A10/AP

    CCD BT

    Abstract: No abstract text available
    Text: Mobile SDRAM VDD 2.5V, V DDQ 1.8V & 2.5V K4S56163LC-RG(S) CMOS SDRAM 16Mx16 Mobile SDRAM (Mobile Function support) Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 Mobile SDRAM (VDD 2.5V, V DDQ 1.8V & 2.5V) K4S56163LC-RG(S) CMOS SDRAM Revision History Revision 0.0 (April. 2001, Target)


    Original     		PDF K4S56163LC-RG 16Mx16 256Mb CCD BT

    K4S561632E

    Abstract: sdram cmos K4S560432E K4S560432E-TC K4S560832E K4S5604
    Text: SDRAM 256Mb E-die x4, x8, x16 CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.5 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.5 May 2004 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM Revision History


    Original     		PDF 256Mb 166MHz A10/AP K4S561632E sdram cmos K4S560432E K4S560432E-TC K4S560832E K4S5604

    K4S280432F

    Abstract: K4S281632F
    Text: SDRAM 128Mb F-die x4, x8, x16 CMOS SDRAM 128Mb F-die SDRAM Specification Revision 1.2 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 May 2004 SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM Revision History


    Original     		PDF 128Mb 110mA 140mA 166MHz. A10/AP K4S280432F K4S281632F

    Untitled

    Abstract: No abstract text available
    Text: SDRAM 256Mb E-die x4, x8, x16 CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.2 June. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 June. 2003 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM Revision History


    Original     		PDF 256Mb 166MHz 16Bit A10/AP

    K4S641632H

    Abstract: K4S640432H-TC K4S640832H K4S641632H-TC tcl 14175 8Mb samsung SDRAM
    Text: SDRAM 64Mb H-die x4, x8, x16 CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.8 August 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.8 August 2004 SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM Revision History


    Original     		PDF A10/AP K4S641632H K4S640432H-TC K4S640832H K4S641632H-TC tcl 14175 8Mb samsung SDRAM

    Untitled

    Abstract: No abstract text available
    Text: SDRAM 128Mb E-die x4, x8, x16 CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.1 April. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 Apr. 2003 SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM Revision History


    Original     		PDF 128Mb x4/x8/x16 16Bit A10/AP

    K4S161622H-TC60

    Abstract: K4S161622H K4S161622H-TC55 K4S161622H-TC70 K4S161622H-TC80
    Text: SDRAM 16Mb H-die x16 CMOS SDRAM 16Mb H-die SDRAM Specification Revision 1.3 January 2004 Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 January 2004 SDRAM 16Mb H-die(x16) CMOS SDRAM Revision History Revision 0.0 (May, 2003)


    Original     		PDF 200MHz. A10/AP K4S161622H-TC60 K4S161622H K4S161622H-TC55 K4S161622H-TC70 K4S161622H-TC80

    Untitled

    Abstract: No abstract text available
    Text: Low Power SDRAM V DD 2.5V, V DDQ 1.8V K4S64163LF Preliminary CMOS SDRAM 4Mx16 Low Power SDRAM Revision 0.1 February 2001 Rev. 0.1 Feb. 2001 Low Power SDRAM (V DD 2.5V, V DDQ 1.8V) K4S64163LF Preliminary CMOS SDRAM Revision History Revision 0.0 (February 7. 2001, Preliminary)


    Original     		PDF K4S64163LF 4Mx16 16Bit 200us