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    Samsung Semiconductor K4S643232F-TC70

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    Samsung Semiconductor K4S643232H-TC60

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    Bristol Electronics K4S643232H-TC60 1,793
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    Samsung Electro-Mechanics K4S643232H-TC60

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    Bristol Electronics K4S643232H-TC60 12 1
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    Micron Technology Inc K4S643232H-UC50

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    Samsung Semiconductor K4S643232H-UC50

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    Bristol Electronics K4S643232H-UC50 2,712 2
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    K4S643232 Datasheets (75)

    Part ECAD Model Manufacturer Description Curated Type PDF
    K4S643232C Samsung Electronics 512K x 32-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF
    K4S643232C-TC10 Samsung Electronics 512K x 32-Bit x 4 banks synchronous DRAM LVTTL, 100MHz Original PDF
    K4S643232C-TC55 Samsung Electronics 2M x 32 SDRAM 512K x 32-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S643232C-TC60 Samsung Electronics 2M x 32 SDRAM 512K x 32-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S643232C-TC70 Samsung Electronics 2M x 32 SDRAM 512K x 32-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S643232C-TC80 Samsung Electronics 512K x 32-Bit x 4 banks synchronous DRAM LVTTL, 125MHz Original PDF
    K4S643232C-TC/L10 Samsung Electronics 2M x 32 SDRAM 512K x 32-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S643232C-TC/L55 Samsung Electronics 2M x 32 SDRAM 512K x 32-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S643232C-TC/L60 Samsung Electronics 2M x 32 SDRAM 512K x 32-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S643232C-TC/L70 Samsung Electronics 2M x 32 SDRAM 512K x 32-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S643232C-TC/L80 Samsung Electronics 2M x 32 SDRAM 512K x 32-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S643232C-TL10 Samsung Electronics 512K x 32-Bit x 4 banks synchronous DRAM LVTTL, 100MHz Original PDF
    K4S643232C-TL55 Samsung Electronics 512K x 32-Bit x 4 banks synchronous DRAM LVTTL, 183MHz Original PDF
    K4S643232C-TL60 Samsung Electronics 512K x 32-Bit x 4 banks synchronous DRAM LVTTL, 166MHz Original PDF
    K4S643232C-TL70 Samsung Electronics 512K x 32-Bit x 4 banks synchronous DRAM LVTTL, 143MHz Original PDF
    K4S643232C-TL80 Samsung Electronics 512K x 32-Bit x 4 banks synchronous DRAM LVTTL, 125MHz Original PDF
    K4S643232E Samsung Electronics 512K x 32-Bit x 4 Banks Synchronous DRAM LVTTL(3.3V Original PDF
    K4S643232E Samsung Electronics 2M x 32 SDRAM 512K x 32-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S643232E- Samsung Electronics 2M x 32 SDRAM 512K x 32-Bit x 4 Banks Synchronous DRAM LVTTL(3.3V) Original PDF
    K4S643232E-TC45 Samsung Electronics 2M x 32 SDRAM 512K x 32-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF

    K4S643232 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K4S643232F

    Abstract: No abstract text available
    Text: K4S643232F CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.0 January 2002 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 Jan. 2002 K4S643232F CMOS SDRAM Revision History


    Original     		PDF K4S643232F 32bit K4S643232F-TC/L55 K4S643232F

    Untitled

    Abstract: No abstract text available
    Text: K4S643232E-TE/N CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 3.3V Extended Temperature 86-TSOP Revision 1.4 December 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.4 (Dec. 2001)


    Original     		PDF K4S643232E-TE/N 32bit 86-TSOP 90-Ball K4S643232E-T/S

    K4S643232H-UC

    Abstract: K4S643232H samsung k4s643232h tc70 K4S643232HU
    Text: K4S643232H SDRAM 2M x 32 SDRAM 86 TSOP-II with Pb-Free RoHS compliant Revision 1.2 April 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4S643232H A10/AP K4S643232H-UC K4S643232H samsung k4s643232h tc70 K4S643232HU

    K4S643232C

    Abstract: K4S643232
    Text: K4S643232C CMOS SDRAM 512K x 32Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		PDF K4S643232C 32Bit K4S643232C 86-TSOP2-400F K4S643232

    K4S643232F-TI/p

    Abstract: K4S643232F
    Text: K4S643232F-TI/P CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 3.3V Industrial Temperature 86-TSOP Revision 1.0 January 2002 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 (Jan. 2002)


    Original     		PDF K4S643232F-TI/P 32bit 86-TSOP K4S643232F K4S643232F-TI/p

    K4S643232E

    Abstract: No abstract text available
    Text: K4S643232E-TI/P CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Industrial Temperature Revision 1.2 October 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.2 Oct. 2001 K4S643232E-TI/P


    Original     		PDF K4S643232E-TI/P 32bit K4S643232E

    Untitled

    Abstract: No abstract text available
    Text: K4S643232E-TI/P CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Industrial Temperature Revision 1.0 January 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 Jan. 2001 K4S643232E-TI/P


    Original     		PDF K4S643232E-TI/P 32bit 86-TSOP2-400F

    Untitled

    Abstract: No abstract text available
    Text: K4S643232E CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.0 October 2000 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 Oct. 2000 K4S643232E CMOS SDRAM Revision History


    Original     		PDF K4S643232E 32bit K4S643232E-40/55/7C K4S643232E-45 86-TSOP2-400F

    K4S643232C

    Abstract: No abstract text available
    Text: K4S643232C CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.1 November 1999 Samsung Electronics reserves the right to change products or specification without notice. -1- REV. 1.1 Nov. '99 K4S643232C CMOS SDRAM Revision History


    Original     		PDF K4S643232C 32bit KM432S2030CT-G/F K4S643232C-TC/TL K4S643232C 86-TSOP2-400F

    K4S643232E

    Abstract: No abstract text available
    Text: K4S643232E CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.3 October 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.3 Oct. 2001 K4S643232E CMOS SDRAM Revision History


    Original     		PDF K4S643232E 32bit K4S643232E-55 K4S643232E

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    k4s643232f

    Abstract: KS RMII Reduced MII aa2c "routing tables"
    Text: PacketTrunk-4 Device TDMoIP/MPLS Gateway Device TXC-05870 DESCRIPTION • Four T1/E1/Serial or one T3/E3 TDM interfaces • One 10/100 Ethernet IEEE 802.3 MAC, interface via MII/RMII/SMII/SSMII; HDX or FDX • VLAN support per IEEE 802.1 p & Q • Four independent advanced clock recovery blocks


    Original     		PDF TXC-05870 TXC-05870-MB, TXC-05870 k4s643232f KS RMII Reduced MII aa2c "routing tables"

    TCXO A31 10MHZ

    Abstract: MT48LC4M32B2TG-6 L1V16 Datum OCXO
    Text: PRELIMINARY PRODUCT BRIEF: SUBJECT TO CHANGE Rev: 091407 DS34S108, DS34S104, DS34S102, DS34S101 Description Abridged General Description Features The IETF PWE3 SAToP/CESoPSN/TDMoIP/HDLC draft-compliant DS34S108 allows up to eight T1/E1 links or frame-based serial HDLC links to be


    Original     		PDF DS34S108, DS34S104, DS34S102, DS34S101 DS34S108 823/G board25 DS34S108 TCXO A31 10MHZ MT48LC4M32B2TG-6 L1V16 Datum OCXO

    pic microcontroller family ptf

    Abstract: epoch stepper motor motorola bts hm1 MPC8260 MSC8101 SC100 SC140 Samsung t-dmb module samsung t-dmb soc 8Mb samsung SDRAM
    Text: MSC8101 USER’S GUIDE 16-Bit Digital Signal Processor MSC8101UG/D Revision 1, June 2001 EOnCE is a registered trademark of Motorola, Inc. StarCore, PowerQUICC II, Motorola, and the Motorola logo are trademarks of Motorola, Inc. The PowerPC name is a trademark of International Business Machines Corporation used by Motorola under license


    Original     		PDF MSC8101 16-Bit MSC8101UG/D HDI16 Index-12 pic microcontroller family ptf epoch stepper motor motorola bts hm1 MPC8260 SC100 SC140 Samsung t-dmb module samsung t-dmb soc 8Mb samsung SDRAM

    diode db3 c248

    Abstract: CPPLC7LTBR EPM3128ATC100-10 IC LM317 8pin siemens ferrite n22 p14 zener DB3 C209 K4S643232-TC60 MURATA BLM18ag121 HALO N5 C242-C244
    Text: Freescale Semiconductor, Inc. User’s Manual Freescale Semiconductor, Inc. MPC852TADSRM/D Version 1.0 June 1, 2003 MPC852TADS User’s Manual Motorola, Inc., 2003 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc.


    Original     		PDF MPC852TADSRM/D MPC852TADS diode db3 c248 CPPLC7LTBR EPM3128ATC100-10 IC LM317 8pin siemens ferrite n22 p14 zener DB3 C209 K4S643232-TC60 MURATA BLM18ag121 HALO N5 C242-C244

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    Untitled

    Abstract: No abstract text available
    Text: Rev: 032609 DS34S101, DS34S102, DS34S104, DS34S108 Single/Dual/Quad/Octal TDM-over-Packet Chip General Description These IETF PWE3 SAToP/CESoPSN/TDMoIP/HDLC compliant devices allow up to eight E1, T1 or serial streams or one high-speed E3, T3, STS-1 or serial


    Original     		PDF DS34S101, DS34S102, DS34S104, DS34S108 823/G DS34S10x DS34S101 DS34S102

    K4S643232H

    Abstract: No abstract text available
    Text: SDRAM 64Mb H-die x32 CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.0 November 2003 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 November. 2003 SDRAM 64Mb H-die (x32)


    Original     		PDF 32bit A10/AP K4S643232H

    K4S643232H

    Abstract: K4S643232
    Text: SDRAM 64Mb H-die x32 CMOS SDRAM 64Mb H-die (x32) SDRAM Specification Revision 1.3 February 2004 *Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.3 February. 2004 SDRAM 64Mb H-die (x32) CMOS SDRAM Revision History


    Original     		PDF A10/AP K4S643232H K4S643232

    TXC-06010-MB

    Abstract: TXC-06010 samsung Capacitance lables transwitch packettrunk fifo synchronus asynchronus PacketTrunk
    Text:  PacketTrunk-4 Plus Device TDMoIP/MPLS Gateway Device TXC-06010 DATA SHEET PRODUCT PREVIEW TXC-06010-MB, Ed. 2 June 2006 FEATURES APPLICATIONS • Four T1/E1/Serial or one T3/E3 TDM interfaces • One 10/100 Ethernet IEEE 802.3 MAC interface via MII/RMII/SMII/SSMII; HDX or


    Original     		PDF TXC-06010 TXC-06010-MB, TXC-06010-MB TXC-06010 samsung Capacitance lables transwitch packettrunk fifo synchronus asynchronus PacketTrunk

    Untitled

    Abstract: No abstract text available
    Text: SDRAM 64Mb H-die x32 CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.2 December 2003 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.2 December. 2003 SDRAM 64Mb H-die (x32)


    Original     		PDF 32bit A10/AP

    Untitled

    Abstract: No abstract text available
    Text: Rev: 032609 DS34S101, DS34S102, DS34S104, DS34S108 Single/Dual/Quad/Octal TDM-over-Packet Chip General Description These IETF PWE3 SAToP/CESoPSN/TDMoIP/HDLC compliant devices allow up to eight E1, T1 or serial streams or one high-speed E3, T3, STS-1 or serial


    Original     		PDF DS34S101, DS34S102, DS34S104, DS34S108 DS34S101 DS34S102

    Untitled

    Abstract: No abstract text available
    Text: K4S643233E-SE/N CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 3.0V & 3.3V Extended Temperature 90-Ball FBGA Revision 1.5 April 2002 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.5 April 2002


    Original     		PDF K4S643233E-SE/N 32bit 90-Ball 2Mx32 K4S643234E-S K4S643232E-S K4S643233E-S

    Untitled

    Abstract: No abstract text available
    Text: PacketTrunk-4 Device TDMoIP/MPLS Gateway Device TXC-05870 DESCRIPTION • Four T1/E1/Serial or one T3/E3/STS-1 TDM interfaces • One 10/100 Ethernet IEEE 802.3 MAC, interface via MII/RMII/SMII/SSMII; HDX or FDX • VLAN support per IEEE 802.1 p & Q • Four independent advanced clock recovery blocks


    Original     		PDF TXC-05870 TXC-05870-MB,