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    Microchip Technology Inc SD1127

    RF TRANS NPN 18V 175MHZ TO39
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    SD1127 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SD1127 Advanced Power Technology RF & MICROWAVE TRANSISTOR VHF FM MOBILE APPLICATIONS Original PDF
    SD1127 Advanced Power Technology RF & MICROWAVE TRANSISTORS VHF FM MOBILE APPLICATIONS Original PDF
    SD1127 Advanced Semiconductor Transistor Original PDF
    SD1127 Microsemi RF & MICROWAVE TRANSISTORS VHF COMMUNICATIONS Original PDF
    SD1127 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    SD1127 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    SD1127 STMicroelectronics Shortform Data Book 1988 Short Form PDF
    SD1127 Thomson Semiconductors Telecom Integrated Circuits Data Book 1985 Scan PDF
    SD1127 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    SD1127BD Topaz Semiconductor 60 V, 4 ?, N-channel enhancement-mode vertical D-MOS FET ultra low-leakage Scan PDF
    SD1127CHP Topaz Semiconductor 60 V, 4 ?, N-channel enhancement-mode vertical D-MOS FET ultra low-leakage Scan PDF

    SD1127 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SD1127 RF & MICROWAVE TRANSISTORS VHF FM MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 4.0 W MINIMUM GP = 12.0 dB GROUNDED EMITTER 1. Collector 2. Base 3. Emitter TO-39 DESCRIPTION: The SD1127 is a epitaxial silicon NPN transistor designed


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    PDF SD1127 SD1127

    CHIP TRANSISTOR

    Abstract: gp 219 NPN planar RF transistor SD1127
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1127 RF & MICROWAVE TRANSISTORS VHF COMMUNICATIONS Features • • • DESIGNED FOR VHF MILITARY AND COMMERCIAL EQUIPMENT 4.0 WATTS (MIN) WITH GREATER THAN 10 dB GAIN


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    PDF SD1127 SD1127 MSC0936 CHIP TRANSISTOR gp 219 NPN planar RF transistor

    sd1127

    Abstract: No abstract text available
    Text: <3\ U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 SD1127 RF & MICROWAVE TRANSISTORS VHP FM MOBILE APPLICATIONS Features • • • • • I 175MHz 12.5 VOLTS POUT = 4.0 W MINIMUM G P =12.0dB


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    PDF SD1127 175MHz SD1127 136MHz 155MHz 11-J14 13-J20

    SD1127

    Abstract: No abstract text available
    Text: SD1127 SILICON NPN RF POWER TRANSISTOR DESCRIPTION: The ASI SD1127 is designed for VHF mobil communications applications up to 175 MHz. FEATURES: PACKAGE STYLE TO-39 • Grounded Emiter The ASI SD1127  Gp 12 dB @ 12.5V 175 MHz  Pout 4.0 W Min. MAXIMUM RATINGS


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    PDF SD1127 SD1127

    J148

    Abstract: No abstract text available
    Text: SD1127 SILICON NPN RF POWER TRANSISTOR DESCRIPTION: The ASI SD1127 is designed for VHF mobil communications applications up to 175 MHz. FEATURES: PACKAGE STYLE TO-39 • Grounded Emiter The ASI SD1127 • Gp 12 dB @ 12.5V 175 MHz • Pout 4.0 V Min. MAXIMUM RATINGS


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    PDF SD1127 SD1127 J148

    Untitled

    Abstract: No abstract text available
    Text: SD1127 RF & MICROWAVE TRANSISTORS VHF FM MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 4.0 W MINIMUM GP = 12.0 dB GROUNDED EMITTER 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: The SD1127 is a epitaxial silicon NPN transistor designed


    Original
    PDF SD1127 SD1127

    SD1127

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1127 RF & MICROWAVE TRANSISTORS VHF FM MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 4.0 W MINIMUM GP = 12.0 dB GROUNDED EMITTER 1. Emitter


    Original
    PDF SD1127 SD1127

    SD1127

    Abstract: J11 transistor
    Text: SD1127 RF & MICROWAVE TRANSISTORS VHF FM MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 4.0 W MINIMUM GP = 12.0 dB GROUNDED EMITTER 1. Collector 2. Base 3. Emitter TO-39 DESCRIPTION: The SD1127 is a epitaxial silicon NPN transistor designed


    Original
    PDF SD1127 SD1127 J11 transistor

    J148

    Abstract: SD1127
    Text: SD1127 RF & MICROWAVE TRANSISTORS VHF FM MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 4.0 W MINIMUM GP = 12.0 dB GROUNDED EMITTER 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: The SD1127 is a epitaxial silicon NPN transistor designed


    Original
    PDF SD1127 SD1127 J148

    J148

    Abstract: SD1127
    Text: SD1127 SILICON NPN RF POWER TRANSISTOR DESCRIPTION: The ASI SD1127 is designed for VHF mobil communications applications up to 175 MHz. FEATURES: PACKAGE STYLE TO-39 • Grounded Emiter The ASI SD1127 • Gp 12 dB @ 12.5V 175 MHz • Pout 4.0 V Min. MAXIMUM RATINGS


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    PDF SD1127 SD1127 J148

    mce544

    Abstract: bfr96 equivalent MC3042 Bipolar Transistor y 200Mhz MRF237 / SD1127 MC1343 MCE545 transistor 5ghz pnp MC1309 MRF630
    Text: MC3042 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MC3042 is a high gain, discrete silicon bipolar transistor, shipped in waffle pack. ! 1Watt Output Power @ 400MHz ! Gold Back Metal IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com


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    PDF MC3042 400MHz SD1127/MRF237 MS1649/MRF630 MRF837/MRF8372 MRF559 400mA 200mA mce544 bfr96 equivalent Bipolar Transistor y 200Mhz MRF237 / SD1127 MC1343 MCE545 transistor 5ghz pnp MC1309 MRF630

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


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    PDF T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode

    PNP 2GHz LNA

    Abstract: mce544 bfr96 equivalent TRANSISTOR NPN 5GHz TRANSISTOR PNP 5GHz MC1333 ms1649 MCE545 transistor 5ghz pnp MRF630
    Text: MC1333 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MC1333 is a low noise, high gain, discrete silicon bipolar transistor, shipped in waffle pack. ! Low noise-2.5dB@500MHz ! Gold Back Metal IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com


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    PDF MC1333 500MHz SD1127/MRF237 MS1649/MRF630 MRF837/MRF8372 MRF559 400mA 200mA PNP 2GHz LNA mce544 bfr96 equivalent TRANSISTOR NPN 5GHz TRANSISTOR PNP 5GHz ms1649 MCE545 transistor 5ghz pnp MRF630

    LM1011N

    Abstract: JRC386D X0238CE UA78GKC M51725L MJ13005 AN6677 HA11749 MN8303 sn76131n
    Text: TCG/NTE/ECG To JEDEC and Japanese ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44


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    PDF ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 LM1011N JRC386D X0238CE UA78GKC M51725L MJ13005 AN6677 HA11749 MN8303 sn76131n

    SD1012-09

    Abstract: SD1072 T5400 SD1273 SD1098-03
    Text: RF NPN Power Transistors Part Number Microsemi Division Package Outline • SD1483 SD1015 SD1013 SD1013-03 SD1019 SD1019-05 SD1441 SD1273 SD1012 SD1012-09 SD1166 SD1127 SD1012-03 SD1143 SD1143-01 SD1013-09 SD1062 SD1272 SD1272-02 SD1014-02 SD1014-06 SD1070


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    PDF

    SD1127

    Abstract: Arco 315 arco 402
    Text: H MS _r~>_arm/m S IV U C r U S e m i P ro g re s s P o w e re d b y T ec h no log y 140 C o m m erc e Drive n i i v i M o n tg o m eryville , IPA 18936-1013 Tel: 215 63 1-9 840 •■■vsI l i u w i i i b i y v i i i b , ^ . . «-> _ SD1127 RF & MICROWAVE TRANSISTORS


    OCR Scan
    PDF 230MHz 175MHz SD1127 S88SDH27-0! S8SS01127-03 S88SD1127 S88S01-274G Arco 315 arco 402

    SD1127

    Abstract: SD1127BD SD1127CHP
    Text: TOPAZ SEMICONDUCTOR DSE I l o a s s a t OOOIOMO 1 r - 3 S '-c? S ' - I — SD1127 SEMICONDUCTOR N-CHANNEL ENHÂ^CEI^E^Î-^ODE VERTICAL D-MOS FE7 ULTRA LOW-LEAKA@E ORDERING INFORMATION SD1127BD TO-226AA TO-92 Plastic Package SD1127CHP Sorted Chips In Waffle Pack


    OCR Scan
    PDF O-226AA SD1127BD SD1127CHP 80nSec, WIDTH-100 SD1127 SD1127BD SD1127CHP

    TO-228AA

    Abstract: No abstract text available
    Text: TELEDYNE COMPONENTS T W X m EÖE D M öWbUS ^ æ QüQb417 3 J * r 3s m i 2 7 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE VERTICAL D-MOS FET ULTRA LOW-LEAKAGE ORDERING INFORMATION SD1127BD TO-228AA TO-92 Plastic Package SD1127CHP Sorted Chips in Waffle Pack


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    PDF Qb417 O-228AA SD1127BD SD1127CHP OT-143) TO-228AA

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


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    PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    SD1127

    Abstract: No abstract text available
    Text: s G S-THOMSON OMC D | 7 ^ 2 3 7 aaaGG2,ì 1 T ~ ? Z z * P !ix . S O L ID ST A T E M IC R O W A V E T H OM S O N COMPONEN T S-M O ST EK SD 1127 THOMSON-CSF COMPONENTS CORPORATION Montgomeryville.PA 18936• 215 362-8500■ T W X 510-661-7299 ,. v n¡. _ ‘


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    PDF SD1127

    PT8811

    Abstract: PT8740 transistor pt4544 PT8828 RF Transistor S10-12 2N6095 SD1076 MRF510 MM1669 2N3563 REPLACEMENT
    Text: cross reference liste d'équivalence THOMSON-CSF THOMSON-CSF pro d u ct line for RF pow er tran sisto rs has su cce ssfully cross referenced m any co m p e titive tran sisto r products. In m ost cases, these replacem ent tran sisto rs d ire ctly replace the co m p e titive pa rts for DC and RF p a ram eters in a ctu al operating system s. It is possible,


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    PDF BAM20 2N5642 B25-12 2N6082 2N6084 MSC2304 TH2304 PT8809 SD1134 2N5689 PT8811 PT8740 transistor pt4544 PT8828 RF Transistor S10-12 2N6095 SD1076 MRF510 MM1669 2N3563 REPLACEMENT

    Untitled

    Abstract: No abstract text available
    Text: Micmsemi m m m RF Products a Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS VHF COMMUNICATIONS Features • • • DESIGNED FOR VHF MILITARY AND COMMERCIAL


    OCR Scan
    PDF SD1127 MSC0936

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


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    PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503