74lvc3245
Abstract: SAMSUNG NAND FLASH SAMSUNG NAND FLASH TRANSLATION LAYER samsung NAND date code marking samsung Nand "bad block" smartmedia ecc SAMSUNG NAND FLASH TRANSLATION LAYER FTL samsung hdd f3 SmartMedia Logical Format SAMSUNG NAND FTL
Text: Confidential SAMSUNG NAND FLASH APPLICATION NOTE Software Driver of SmartMedia TM (Ver 3.0) MEMORY PRODUCT & TECHNOLOGY SAMSUNG ELECTRONICS Co., LTD 1 ELECTRONICS Confidential SAMSUNG NAND FLASH Revision History Revision Date Name 1.0 1.1 2.0 98/12/10 99/03/04
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0000h
0001h
0002h
12bit
16bit
74lvc3245
SAMSUNG NAND FLASH
SAMSUNG NAND FLASH TRANSLATION LAYER
samsung NAND
date code marking samsung Nand
"bad block" smartmedia ecc
SAMSUNG NAND FLASH TRANSLATION LAYER FTL
samsung hdd f3
SmartMedia Logical Format
SAMSUNG NAND FTL
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Samsung k9f1208u
Abstract: SAMSUNG NAND FLASH samsung nand WSOP48 K9F28 NAND FLASH BGA samsung 1Gb nand flash NAND01G cache program "NAND Flash" 128M NAND Flash Memory
Text: AN1838 APPLICATION NOTE How to Use an ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use an STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for a Samsung device.
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AN1838
NAND128-A,
NAND256-A,
NAND512-A,
NAND01G-A,
128Mbits
Samsung k9f1208u
SAMSUNG NAND FLASH
samsung nand
WSOP48
K9F28
NAND FLASH BGA
samsung 1Gb nand flash
NAND01G cache program
"NAND Flash"
128M NAND Flash Memory
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samsung 8Gb nand flash
Abstract: oneNand onenand xsr eXtended Sector Remapper oneNand flash SRAM-512Mb samsung NAND FLASH BGA NAND FLASH BGA samsung 2GB Nand flash samsung xsr
Text: Samsung OneNAND Flash Fusion Memory Featuring High-Density NAND Flash with a NOR Interface Samsung OneNAND™ Flash What is OneNAND? OneNAND for Handsets Samsung’s OneNAND meets the memory-hungry needs of next-generation devices by providing a single-chip flash
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256Mb
BR-06-NAND-001
samsung 8Gb nand flash
oneNand
onenand xsr
eXtended Sector Remapper
oneNand flash
SRAM-512Mb
samsung NAND FLASH BGA
NAND FLASH BGA
samsung 2GB Nand flash
samsung xsr
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SAMSUNG NAND Flash Qualification Report
Abstract: SAMSUNG 128Mb NAND Flash Qualification Reliability NAND "read disturb" Samsung NAND Qualification Reliability NAND Flash Qualification Reliability NAND qualification NAND read disturb 63-TBGA K9F2808U0C-YCB0 K9F2808U0C-YIB0
Text: SAMSUNG 128Mb NAND Flash Qualification & Reliability Report [ 128Mb NAND Flash C-die ] September, 2003 Rev. 01 Memory Quality Assurance The information contained in this document is proprietary to Samsung Electronics Co., Ltd. and shall be protected from any reproduction in part or as a whole without Samsung`s written approval.
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128Mb
industria1980
30pcs
48TSOP1
SAMSUNG NAND Flash Qualification Report
SAMSUNG 128Mb NAND Flash Qualification Reliability
NAND "read disturb" Samsung
NAND Qualification Reliability
NAND Flash Qualification Reliability
NAND qualification
NAND read disturb
63-TBGA
K9F2808U0C-YCB0
K9F2808U0C-YIB0
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K5W1G
Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION
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BR-07-ALL-001
K5W1G
KMCME0000M-B998
k9hbg08u1m
K9MCG08U5M
K5E1257ACM
MC4GE04G5APP-0XA
b998
KMCME0000M
hd161hj
K5D1G
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SAMSUNG NAND FLASH
Abstract: Samsung 256 Gbit nand NAND01G cache program Samsung k9f1208u K9F1208U0M NAND FLASH BGA Samsung Nand tbga 6x8 Package WSOP48 bga 6x8
Text: AN1838 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use a Small Page 528 Byte/264 Word Page STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for
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AN1838
Byte/264
NAND128-A,
NAND256-A,
NAND512-A,
NAND01G-A,
128Mbits
SAMSUNG NAND FLASH
Samsung 256 Gbit nand
NAND01G cache program
Samsung k9f1208u
K9F1208U0M
NAND FLASH BGA
Samsung Nand
tbga 6x8 Package
WSOP48
bga 6x8
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KLM8G2FE3B
Abstract: klm8g samsung eMMC 4.5 TLC nand samsung tlc nand flash KLM4G 153 ball eMMC memory SAMSUNG emmc klm8g2 Samsung KLMBG4GE2A
Text: Samsung eMMC Managed NAND Flash memory solution supports mobile applications FBGA QDP Package BROCHURE Efficiency, reduced costs and quicker time to market Expand device development with capable memory solutions Simplify mass storage designs Conventional NAND Flash memory can be challenging to
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NAND Flash Memory
Abstract: nand flash Micron NAND flash controller "nand flash memory" "nand flash memory" fat32 Micron NAND onfi "NAND Flash" nandflash samsung nand flash FAT32
Text: Dedicated modules to support memories by Micron, STMicroelectronics and Samsung NANDFLASHCTRL Driver NAND Flash Memory Controller Core Software Driver The NANDFLASH-CTRL Driver provides the functionality of the CAST NAND Flash Controller IP core to the user’s application system.
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY K9K2G08U0A Document Title 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue May. 31. 2004 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
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K9K2G08U0A
K9K2G08U0A-Y
K9K2G08U0A-V
K9K2G08U0A
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KM29W32000AIT
Abstract: KM29N32000 400F KM29W32000AT flash row column read write "program and data" 19 Resister 0805 samsung
Text: KM29W32000AT, KM29W32000AIT FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1998 Advance The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29W32000AT,
KM29W32000AIT
KM29V32000
KM29N32000
KM29W32000
KM29W32000AIT
KM29N32000
400F
KM29W32000AT
flash row column read write "program and data" 19
Resister 0805 samsung
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Untitled
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY KM29W16000BTS Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1999 Preliminary The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29W16000BTS
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KM29W16000BIT
Abstract: 400F KM29W16000BT
Text: KM29W16000BT, KM29W16000BIT Preliminary FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1999 Preliminary The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29W16000BT,
KM29W16000BIT
KM29W16000BIT
400F
KM29W16000BT
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KM29W32000ATS
Abstract: No abstract text available
Text: KM29W32000ATS Advance Information FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1998 Advance The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29W32000ATS
KM29W32000ATS
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KM29U128AIT
Abstract: KM29U128AT NAND flash memory
Text: Advanced Information FLASH MEMORY KM29U128AT, KM29U128AIT Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1999 Advanced Information The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29U128AT,
KM29U128AIT
KM29U128AA16M
48-pin
KM29U128AIT
KM29U128AT
NAND flash memory
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K9F4G08U0M
Abstract: K9F4G08U 52-ULGA 52ULGA K9K8G08U1M K9F4G08U0M-ICB0 K9F4G08 81h-10h K9F4G08U0M-YCB
Text: Advance FLASH MEMORY K9K8G08U1M K9F4G08U0M Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Nov. 15. 2004 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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K9K8G08U1M
K9F4G08U0M
K9F4G08U0M-Y
K9F4G08U0M
K9F4G08U
52-ULGA
52ULGA
K9K8G08U1M
K9F4G08U0M-ICB0
K9F4G08
81h-10h
K9F4G08U0M-YCB
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KM29W16000AIT
Abstract: KM29W16000AT
Text: KM29W16000AT, KM29W16000AIT FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.1 Data Sheet 1998. July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29W16000AT,
KM29W16000AIT
KM29W16000AIT
KM29W16000AT
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KM29W16000ATS
Abstract: No abstract text available
Text: KM29W16000ATS FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.1 Data Sheet 1998. July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29W16000ATS
KM29W16000ATS
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K9F1G08
Abstract: K9F1G08U0A K9F1G08X0A K9F1G08Q0A ADD12 K9F1G08D0A-Y
Text: K9F1G08Q0A K9F1G08D0A K9F1G08U0A Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Aug. 24th. 2003 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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K9F1G08Q0A
K9F1G08D0A
K9F1G08U0A
K9F1G08Q0A-Y
K9F1G08
K9F1G08U0A
K9F1G08X0A
K9F1G08Q0A
ADD12
K9F1G08D0A-Y
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400F
Abstract: KM29N32000 KM29W32000TS
Text: KM29W32000TS FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29W32000TS
KM29V32000
KM29N32000
KM29W32000
400F
KM29N32000
KM29W32000TS
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400F
Abstract: KM29N32000 KM29W32000IT KM29W32000T
Text: KM29W32000T, KM29W32000IT FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29W32000T,
KM29W32000IT
KM29V32000
KM29N32000
KM29W32000
400F
KM29N32000
KM29W32000IT
KM29W32000T
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377H
Abstract: No abstract text available
Text: HANBit HFDOM40S6Rxxx 40Pin Flash Disk Module Min.128MB ~ Max.4G, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM40S6Rxxx series 40Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The
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HFDOM40S6Rxxx
40Pin
128MB
HFDOM40S6Rxxx
HFDOM40S6R-xxx
DOM40S6R128
377H
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Untitled
Abstract: No abstract text available
Text: HANBit HFDOM40S3Vxxx 40Pin Flash Disk Module Min.16MB ~ Max.384MB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM40S3Vxxx series 40Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The
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HFDOM40S3Vxxx
40Pin
384MB,
HFDOM40S3Vxxx
HFDOM40S3V-xxx
384MByte
DOM40S3V064
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K9HCG08U5M
Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand
Text: SAMSUNG Mobile Memory C ontents NAND Flash NOR Flash One NAND Mobile DRAM movi NAND™ SSD Multi Media Card Living in NAND Flash world Living in the stage of 20GB memory after passing through the dark-age of 1GB in 2002, the mobile & consumer electronics now start to feel the needs
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120GB
128MB
256MB
128MB
512MB
K9HCG08U5M
K9WBG08U1M
K9LAG08U0M-PCB0
KMAFN0000M
KMBGN0000A
K9MDG08U5M-PCB0
K4M56323PI
MCCOE32GQMPQ-M
K4M56163PI
movinand
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29V040
Abstract: No abstract text available
Text: KM29V040T, KM29V040IT FLASH MEMORY Document Title 512K x 8 Bit NAND Flash Memory Revision History Ftevfrfon Np, History Draft Date 0.0 Data Sheet 1997. April 10th 1997 1.0 Data Sheet 1998. April 10th 1998 Remark The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29V040T,
KM29V040IT
29V040
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