K9F1G08U0A-PCB0
Abstract: K9F1G08U0A K9F1G08X0A K9F1G08R0A K9F1G08R0A-J Samsung K9F1G08U0A K9F1G08 K9F1G08U0A-FIB0 K9F1G08U0AP FBGA 63
Text: K9F1G08R0A K9F1G08U0A K9K2G08U1A FLASH MEMORY K9F1G08X0A INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K9F1G08R0A
K9F1G08U0A
K9K2G08U1A
K9F1G08X0A
200mV
K9F1G08U0A-PCB0
K9F1G08X0A
K9F1G08R0A
K9F1G08R0A-J
Samsung K9F1G08U0A
K9F1G08
K9F1G08U0A-FIB0
K9F1G08U0AP
FBGA 63
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K9F1G08U0A-PCB0
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY K9F1G08R0A K9F1G08U0A K9K2G08U1A Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26)
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PDF
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K9F1G08R0A
K9F1G08U0A
K9K2G08U1A
100ns
K9F1G08U0A-PCB0
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K9F1G08U0AYCB0
Abstract: K9F1G08U0A K9F1G08X0A-XIB0 1g nand mcp K9F1G08U0A-PCB0 2112x8 K9F1G08R0A SAMSUNG MCP K9F1G08X0A K9F1G08
Text: K9F1G08R0A K9F1G08U0A K9K2G08U1A FLASH MEMORY Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26)
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Original
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PDF
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K9F1G08R0A
K9F1G08U0A
K9K2G08U1A
100ns
200mV
K9F1G08U0AYCB0
K9F1G08X0A-XIB0
1g nand mcp
K9F1G08U0A-PCB0
2112x8
K9F1G08R0A
SAMSUNG MCP
K9F1G08X0A
K9F1G08
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Untitled
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY K9F1G08R0A K9F1G08U0A K9K2G08U1A Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26)
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Original
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PDF
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K9F1G08R0A
K9F1G08U0A
K9K2G08U1A
100ns
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K9F1G08Q0A
Abstract: No abstract text available
Text: K9F1G08Q0A K9F1G08U0A FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26) - tADL is the time from the WE rising edge of final address cycle
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PDF
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K9F1G08Q0A
K9F1G08U0A
100ns
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K9K2G08U0A-FIB0
Abstract: K9F1G08 K9F1G08X0A K9K2G08R0A
Text: K9K2G08U0A K9K2G08R0A FLASH MEMORY K9K2G08X0A INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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Original
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PDF
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K9K2G08U0A
K9K2G08R0A
K9K2G08X0A
200mV
K9K2G08U0A-FIB0
K9F1G08
K9F1G08X0A
K9K2G08R0A
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K9F1G08U0AYCB0
Abstract: K9F1G08X0A-XIB0 K9F1G08U0A SAMSUNG MCP K9F1G08U0A-PCB0 K9F1G08U0A-YCB0 K9F1G08U0A-Y K9F1G08Q0A K9F1G08U0A-VIB0 Samsung K9F1G08U0A
Text: K9F1G08Q0A K9F1G08U0A FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26) - tADL is the time from the WE rising edge of final address cycle
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Original
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PDF
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K9F1G08Q0A
K9F1G08U0A
100ns
K9F1G08U0AYCB0
K9F1G08X0A-XIB0
K9F1G08U0A
SAMSUNG MCP
K9F1G08U0A-PCB0
K9F1G08U0A-YCB0
K9F1G08U0A-Y
K9F1G08Q0A
K9F1G08U0A-VIB0
Samsung K9F1G08U0A
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K9F1G08
Abstract: K9F1G08U0A K9F1G08X0A K9F1G08Q0A ADD12 K9F1G08D0A-Y
Text: K9F1G08Q0A K9F1G08D0A K9F1G08U0A Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Aug. 24th. 2003 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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K9F1G08Q0A
K9F1G08D0A
K9F1G08U0A
K9F1G08Q0A-Y
K9F1G08
K9F1G08U0A
K9F1G08X0A
K9F1G08Q0A
ADD12
K9F1G08D0A-Y
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