HY27UF082G2A
Abstract: HY27UF162G2A hy27uf082G hy27uf082 52-ULGA hynix nand 2G hynix nand flash 2gb HY27UF hynix nand hynix nand spare area
Text: HY27UF 08/16 2G2A Series 2Gbit (256Mx8bit/128Mx16bit) NAND Flash 2Gb NAND FLASH HY27UF082G2A HY27UF162G2A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
|
Original
|
PDF
|
HY27UF
256Mx8bit/128Mx16bit)
HY27UF082G2A
HY27UF162G2A
HY27UF082G2A
HY27UF162G2A
hy27uf082G
hy27uf082
52-ULGA
hynix nand 2G
hynix nand flash 2gb
hynix nand
hynix nand spare area
|
K9F1G08U0A-PCB0
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY K9F1G08R0A K9F1G08U0A K9K2G08U1A Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26)
|
Original
|
PDF
|
K9F1G08R0A
K9F1G08U0A
K9K2G08U1A
100ns
K9F1G08U0A-PCB0
|
K9F4G08U0M
Abstract: K9F4G08U 52-ULGA 52ULGA K9K8G08U1M K9F4G08U0M-ICB0 K9F4G08 81h-10h K9F4G08U0M-YCB
Text: Advance FLASH MEMORY K9K8G08U1M K9F4G08U0M Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Nov. 15. 2004 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
|
Original
|
PDF
|
K9K8G08U1M
K9F4G08U0M
K9F4G08U0M-Y
K9F4G08U0M
K9F4G08U
52-ULGA
52ULGA
K9K8G08U1M
K9F4G08U0M-ICB0
K9F4G08
81h-10h
K9F4G08U0M-YCB
|
HY27UH088G2M
Abstract: No abstract text available
Text: HY27UH088G 2/D M Series 8Gbit (1Gx8bit) NAND Flash Document Title 8Gbit (1Gx8bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark May. 13. 2005 Preliminary May. 23. 2005 Preliminary Jun. 13. 2005 Preliminary Jun. 14. 2005
|
Original
|
PDF
|
HY27UH088G
Table11)
HY27UH088G2M
|
hy27uf082
Abstract: hy27uf082G
Text: Preliminary HY27UF 08/16 2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Document Title 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark Dec. 2004 Preliminary May. 23. 2005 Preliminary
|
Original
|
PDF
|
HY27UF
256Mx8bit
128Mx16bit)
hy27uf082
hy27uf082G
|
hy27uf082G
Abstract: No abstract text available
Text: HY27UF 08/16 2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Document Title 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark Dec. 2004 Preliminary May. 23. 2005 Preliminary Aug. 09. 2005
|
Original
|
PDF
|
HY27UF
256Mx8bit
128Mx16bit)
hy27uf082G
|
HY27UF084
Abstract: hynix nand flash 4Gb HY27UF084G2M 52-ULGA
Text: HY27UF084G2M Series 4Gbit 512Mx8bit NAND Flash 4Gb NAND FLASH HY27UF084G2M This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
|
Original
|
PDF
|
HY27UF084G2M
512Mx8bit)
HY27UF084G2M
HY27UF084
hynix nand flash 4Gb
52-ULGA
|
HY27UG088G5M
Abstract: HY27UG088G5 HY27UG088G2M HY27U*G5M HY27UG088G HY270 HY27UG HY27UG088GDM HY27UG088G2M-TP WP 39
Text: Preliminary HY27UG088G 2/5/D M Series 8Gbit (1Gx8bit) NAND Flash 8Gb NAND FLASH HY27UG088G2M HY27UG088G5M HY27UG088GDM This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
|
Original
|
PDF
|
HY27UG088G
HY27UG088G2M
HY27UG088G5M
HY27UG088GDM
HY27UG088GDM
HY27UG088G5M
HY27UG088G5
HY27UG088G2M
HY27U*G5M
HY270
HY27UG
HY27UG088G2M-TP
WP 39
|
K9F2G08U0M-PCB0
Abstract: 512M x 8 Bit NAND Flash Memory K9F2G08U0M K9F2G08U0M-XIB0 K9F2G08U0M-YCB0 48-pin TSOP (I) flash memory K9F2G08U0 SAMSUNG NAND Flash Qualification Report samsung toggle mode NAND K9K4G08U1M
Text: K9K4G08U1M K9F2G08U0M FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
|
Original
|
PDF
|
K9K4G08U1M
K9F2G08U0M
K9XXG08UXM
200mV
K9F2G08U0M-PCB0
512M x 8 Bit NAND Flash Memory
K9F2G08U0M
K9F2G08U0M-XIB0
K9F2G08U0M-YCB0
48-pin TSOP (I) flash memory
K9F2G08U0
SAMSUNG NAND Flash Qualification Report
samsung toggle mode NAND
K9K4G08U1M
|
nand hamming code 2k bytes
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY K9K4G08U1M K9F2G08U0M K9F2G16U0M Document Title 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001 Advance 0.1 1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device Page 34
|
Original
|
PDF
|
K9K4G08U1M
K9F2G08U0M
K9F2G16U0M
9F2G08U0M
nand hamming code 2k bytes
|
K9F4G08U0B
Abstract: K9F4G08U0B-PCB0 K9G4G08U0B Samsung k9f4g08u0b SAMSUNG 4gb NAND Flash Qualification Report K9F4G08U0B-I SAMSUNG NAND Flash Qualification Report K9G4G08B0B SAMSUNG 256Mb NAND Flash Qualification Reliability k9f4g08u0bpcb0
Text: Advance FLASH MEMORY K9K8G08U1B K9F4G08U0B K9F4G08B0B K9XXG08XXB INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
|
Original
|
PDF
|
K9K8G08U1B
K9F4G08U0B
K9F4G08B0B
K9XXG08XXB
K9F4G08U0B-PCB0
K9G4G08U0B
Samsung k9f4g08u0b
SAMSUNG 4gb NAND Flash Qualification Report
K9F4G08U0B-I
SAMSUNG NAND Flash Qualification Report
K9G4G08B0B
SAMSUNG 256Mb NAND Flash Qualification Reliability
k9f4g08u0bpcb0
|
K9F4G08U0M
Abstract: two-plane program nand
Text: Advance FLASH MEMORY K9K8G08U1M K9F4G08U0M Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 0.1 0.2 History Draft Date Remark 1. Initial issue 2. two-plane page program technical note is modified. p27, p35 3. Figure 17.(p37) is modified.
|
Original
|
PDF
|
K9K8G08U1M
K9F4G08U0M
K9F4G08U0M
two-plane program nand
|
hy27uf082g2b
Abstract: hy27uf082G hy27uf082 hy27uf082G2 HY27UF082G2B-F hynix nand hynix nand PROGRAMMING hynix nand flash 2gb 52-ULGA hynix nand edc spare area code
Text: 1 HY27UF 08/16 2G2B Series 2Gbit (256Mx8bit) NAND Flash 2Gb NAND FLASH HY27UF(08/16)2G2B This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
|
Original
|
PDF
|
HY27UF
256Mx8bit)
hy27uf082g2b
hy27uf082G
hy27uf082
hy27uf082G2
HY27UF082G2B-F
hynix nand
hynix nand PROGRAMMING
hynix nand flash 2gb
52-ULGA
hynix nand edc spare area code
|
Untitled
Abstract: No abstract text available
Text: HY27UF084G2M Series 4Gbit 512Mx8bit NAND Flash 4Gb NAND FLASH HY27UF084G2M This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
|
Original
|
PDF
|
HY27UF084G2M
512Mx8bit)
HY27UF084G2M
|
|
|
HY27UG
Abstract: hynix nand HY27UG084G2M
Text: Preliminary HY27UG 08/16 4G(2/D)M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Document Title 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark May. 13. 2005 Preliminary May. 23. 2005
|
Original
|
PDF
|
HY27UG
512Mx8bit
256Mx16bit)
hynix nand
HY27UG084G2M
|
HYNIX HY27UH08AG5M
Abstract: HY27UH08AG5M hy27u*08ag5 hynix nand Hynix 16Gb Nand flash 16G nand HY27U*G5M hynix nand PROGRAMMING marking GG uLGA
Text: HY27UH08AG 5/D M Series 16Gbit (2Gx8bit) NAND Flash 16Gb NAND FLASH HY27UH08AG5M HY27UH08AGDM This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
|
Original
|
PDF
|
HY27UH08AG
16Gbit
HY27UH08AG5M
HY27UH08AGDM
HY27UH08AGDM
HYNIX HY27UH08AG5M
HY27UH08AG5M
hy27u*08ag5
hynix nand
Hynix 16Gb Nand flash
16G nand
HY27U*G5M
hynix nand PROGRAMMING
marking GG
uLGA
|
hy27uf082
Abstract: hy27uf082G2 hy27uf082G HY27UF082G2A HY27UF162G2A hynix nand 2G hynix nand flash 2gb 2gbit HY27UF hynix nand flash 4Gb
Text: HY27UF 08/16 2G2A Series 2Gbit (256Mx8bit/128Mx16bit) NAND Flash 2Gb NAND FLASH HY27UF082G2A HY27UF162G2A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
|
Original
|
PDF
|
HY27UF
256Mx8bit/128Mx16bit)
HY27UF082G2A
HY27UF162G2A
hy27uf082
hy27uf082G2
hy27uf082G
HY27UF082G2A
HY27UF162G2A
hynix nand 2G
hynix nand flash 2gb
2gbit
hynix nand flash 4Gb
|
hynix nand flash otp
Abstract: HY27UG088G HY27UG088G5M HY27UG088G5 hynix nand 8G uLGA hynix nand flash HY27UG088
Text: HY27UG088G 5/D M Series 8Gbit (1Gx8bit) NAND Flash 8Gb NAND FLASH HY27UG088G5M HY27UG088GDM This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
|
Original
|
PDF
|
HY27UG088G
HY27UG088G5M
HY27UG088GDM
HY27UG088GDM
hynix nand flash otp
HY27UG088G5M
HY27UG088G5
hynix nand 8G
uLGA
hynix nand flash
HY27UG088
|
512M x 8 Bit NAND Flash Memory
Abstract: samsung 2GB Nand flash samsung 8Gb nand flash K9F4G08U0M-PCB0 8bit nand flash K9F4G08U0M 52ULGA K9K8G08U1M K9XXG08UXM-XIB0 K9F4G08
Text: K9K8G08U1M K9F4G08U0M FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
|
Original
|
PDF
|
K9K8G08U1M
K9F4G08U0M
K9XXG08UXM
512M x 8 Bit NAND Flash Memory
samsung 2GB Nand flash
samsung 8Gb nand flash
K9F4G08U0M-PCB0
8bit nand flash
K9F4G08U0M
52ULGA
K9K8G08U1M
K9XXG08UXM-XIB0
K9F4G08
|
HY27UG084G2M
Abstract: HY27UG164G2M 52-ULGA hynix nand 4G HY27UG HY27UG084G2 HY27UG084GDM HY27UG084G
Text: HY27UG 08/16 4G(2/D)M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Document Title 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark May. 13. 2005 Preliminary May. 23. 2005 Preliminary
|
Original
|
PDF
|
HY27UG
512Mx8bit
256Mx16bit)
HY27UG084G2M
HY27UG164G2M
52-ULGA
hynix nand 4G
HY27UG084G2
HY27UG084GDM
HY27UG084G
|
HYNIX HY27UH08AG5M
Abstract: HY27UH08AG5M hynix nand spare area 16gb hy27u*08ag5 HY27UH08AGDM hynix nand flash Hynix 16Gb Nand flash
Text: Preliminary HY27UH08AG 5/D M Series 16Gbit (2Gx8bit) NAND Flash 16Gb NAND FLASH HY27UH08AG5M HY27UH08AGDM This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
|
Original
|
PDF
|
HY27UH08AG
16Gbit
HY27UH08AG5M
HY27UH08AGDM
HY27UH08AGDM
HYNIX HY27UH08AG5M
HY27UH08AG5M
hynix nand spare area
16gb
hy27u*08ag5
hynix nand flash
Hynix 16Gb Nand flash
|
K9F2G08R0A
Abstract: No abstract text available
Text: K9F2G08R0A K9F2G08U0A FLASH MEMORY K9F2G08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
|
Original
|
PDF
|
K9F2G08R0A
K9F2G08U0A
K9F2G08UXA
/apps/Eudora/Attach/272-55085-0000
SG200602672
K9F2G08R0A
|
512M x 8 Bit NAND Flash Memory
Abstract: K9F2G16U0M K9F2G08U0M K9F2G08U0M-PCB0 samsung toggle mode NAND Serial NAND K9K4G08U1M K9F2G08Q0M-PCB0
Text: Preliminary FLASH MEMORY K9K4G08U1M K9F2G08U0M K9F2G16U0M Document Title 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001 Advance 0.1 1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device Page 34
|
Original
|
PDF
|
K9K4G08U1M
K9F2G08U0M
K9F2G16U0M
512M x 8 Bit NAND Flash Memory
K9F2G16U0M
K9F2G08U0M-PCB0
samsung toggle mode NAND
Serial NAND
K9K4G08U1M
K9F2G08Q0M-PCB0
|
K9F1G08U0AYCB0
Abstract: K9F1G08U0A K9F1G08X0A-XIB0 1g nand mcp K9F1G08U0A-PCB0 2112x8 K9F1G08R0A SAMSUNG MCP K9F1G08X0A K9F1G08
Text: K9F1G08R0A K9F1G08U0A K9K2G08U1A FLASH MEMORY Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26)
|
Original
|
PDF
|
K9F1G08R0A
K9F1G08U0A
K9K2G08U1A
100ns
200mV
K9F1G08U0AYCB0
K9F1G08X0A-XIB0
1g nand mcp
K9F1G08U0A-PCB0
2112x8
K9F1G08R0A
SAMSUNG MCP
K9F1G08X0A
K9F1G08
|