Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    S8303 Search Results

    SF Impression Pixel

    S8303 Price and Stock

    JRH Electronics ZW-06-19-G-S-830-310

    STACKING BOARD CONNECTOR, ZW SER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ZW-06-19-G-S-830-310 Bulk 170
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    JRH Electronics ZW-10-13-G-S-830-300

    STACKING BOARD CONNECTOR, ZW SER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ZW-10-13-G-S-830-300 Bulk 131
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    JRH Electronics ZW-16-14-G-S-830-340

    STACKING BOARD CONNECTOR, ZW SER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ZW-16-14-G-S-830-340 Bulk 94
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    JRH Electronics ZW-50-13-G-S-830-300

    STACKING BOARD CONNECTOR, ZW SER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ZW-50-13-G-S-830-300 Bulk 60
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    JRH Electronics ZW-36-13-G-S-830-300

    STACKING BOARD CONNECTOR, ZW SER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ZW-36-13-G-S-830-300 Bulk 44
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Find more S8303 price and stock on Findchips.com

    S8303 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si4800BDY-T1-E3

    Abstract: Si4800BDY Si4800BDY-T1-GE3
    Text: Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.0185 at VGS = 10 V 9 0.030 at VGS = 4.5 V 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si4800BDY Si4800BDY-T1-E3 Si4800BDY-T1-GE3 11-Mar-11

    SiHF820AL

    Abstract: IRF820A IRF820AL IRF820AS SiHF820A SiHF820AL-E3
    Text: IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 17 Qgs (nC) 4.3 Qgd (nC) 8.5 Configuration


    Original     		PDF IRF820AS, SiHF820AS IRF820AL, SiHF820AL O-263) O-262) 18-Jul-08 IRF820A IRF820AL IRF820AS SiHF820A SiHF820AL-E3

    IRF840LCPBF

    Abstract: IRF840LC SiHF840LC SiHF840LC-E3
    Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V VGS Rating


    Original     		PDF IRF840LC, SiHF840LC 18-Jul-08 IRF840LCPBF IRF840LC SiHF840LC-E3

    D-PAK package

    Abstract: si7980
    Text: Si7980DP Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS Channel-1 20 Channel-2 20 RDS(on) (Ω) 0.022 at VGS = 10 V 0.025 at VGS = 4.5 V 0.015 at VGS = 10 V 0.019 at VGS = 4.5 V ID (A)a, f 8.0 8.0 8.0 8.0


    Original     		PDF Si7980DP 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 D-PAK package si7980

    a3180

    Abstract: TPCS8303 TPCS83
    Text: S8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ S8303 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)


    Original     		PDF TPCS8303 a3180 TPCS8303 TPCS83

    Untitled

    Abstract: No abstract text available
    Text: Si7374DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0055 at VGS = 10 V 24 0.0066 at VGS = 4.5 V 24 VDS (V) 30 Qg (Typ.) 36 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si7374DP Si7374DP-T1-E3 Si7374DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si7980DP Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS Channel-1 20 Channel-2 20 RDS(on) (Ω) 0.022 at VGS = 10 V 0.025 at VGS = 4.5 V 0.015 at VGS = 10 V 0.019 at VGS = 4.5 V ID (A)a, f 8.0 8.0 8.0 8.0


    Original     		PDF Si7980DP 18-Jul-08

    3B marking

    Abstract: No abstract text available
    Text: S8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ S8303 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Machines and Tools • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)


    Original     		PDF TPCS8303 3B marking

    Untitled

    Abstract: No abstract text available
    Text: S8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ S8303 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Machines and Tools • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)


    Original     		PDF TPCS8303

    Untitled

    Abstract: No abstract text available
    Text: Si4812BDY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.016 at VGS = 10 V 9.5 0.021 at VGS = 4.5 V 7.7 • Halogen-free According to IEC 61249-2-21 Available • LITTLE FOOT Plus Power MOSFET


    Original     		PDF Si4812BDY Si4812BDY-T1-E3 Si4812BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si5440DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.019 at VGS = 10 V 6 0.024 at VGS = 4.5 V 6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Qg (Typ.) • TrenchFET Power MOSFET 9 nC


    Original     		PDF Si5440DC Si5440DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si7980DP Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS Channel-1 20 Channel-2 20 RDS(on) (Ω) 0.022 at VGS = 10 V 0.025 at VGS = 4.5 V 0.015 at VGS = 10 V 0.019 at VGS = 4.5 V ID (A)a, f 8.0 8.0 8.0 8.0


    Original     		PDF Si7980DP 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si4812BDY

    Abstract: No abstract text available
    Text: Si4812BDY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.016 at VGS = 10 V 9.5 0.021 at VGS = 4.5 V 7.7 • Halogen-free According to IEC 61249-2-21 Available • LITTLE FOOT Plus Power MOSFET


    Original     		PDF Si4812BDY Si4812BDY-T1-E3 Si4812BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si7374DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0055 at VGS = 10 V 24 0.0066 at VGS = 4.5 V 24 VDS (V) 30 Qg (Typ.) 36 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si7374DP Si7374DP-T1-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.0185 at VGS = 10 V 9 0.030 at VGS = 4.5 V 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si4800BDY Si4800BDY-T1-E3 Si4800BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si7374DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0055 at VGS = 10 V 24 0.0066 at VGS = 4.5 V 24 VDS (V) 30 Qg (Typ.) 36 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si7374DP Si7374DP-T1-E3 Si7374DP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product Si5440DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.019 at VGS = 10 V 6 0.024 at VGS = 4.5 V 6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Qg (Typ.) • TrenchFET Power MOSFET 9 nC


    Original     		PDF Si5440DC Si5440DC-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4812BDY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.016 at VGS = 10 V 9.5 0.021 at VGS = 4.5 V 7.7 • Halogen-free According to IEC 61249-2-21 Available • LITTLE FOOT Plus Power MOSFET


    Original     		PDF Si4812BDY Si4812BDY-T1-E3 Si4812BDY-T1-GE3 11-Mar-11

    IRF820S

    Abstract: No abstract text available
    Text: IRF820S, SIHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 24 Qgs (nC) 3.3 Qgd (nC) 13 Configuration Single D DESCRIPTION D2PAK (TO-263) Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRF820S, SIHF820S O-263) 18-Jul-08 IRF820S

    TPCS8303

    Abstract: No abstract text available
    Text: S8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ S8303 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)


    Original     		PDF TPCS8303 TPCS8303

    TPCS8303

    Abstract: No abstract text available
    Text: S8303 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSⅣ S8303 ○ リチウムイオン 2 次電池用 ○ ノートブック PC 用 ○ 携帯電子機器用 • 単位: mm 小型薄型で実装面積が小さい。


    Original     		PDF TPCS8303 TPCS8303

    Untitled

    Abstract: No abstract text available
    Text: New Product Si5440DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.019 at VGS = 10 V 6 0.024 at VGS = 4.5 V 6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Qg (Typ.) • TrenchFET Power MOSFET 9 nC


    Original     		PDF Si5440DC Si5440DC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si5440DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.019 at VGS = 10 V 6 0.024 at VGS = 4.5 V 6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Qg (Typ.) • TrenchFET Power MOSFET 9 nC


    Original     		PDF Si5440DC Si5440DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    S8302

    Abstract: S8303 NPDS8301 NPDS8302 NPDS8303
    Text: S e m i c o n d u c t o r " & NPDS8301 NPDS8302 S8303 D2 s2 S O -8 * * S1 D1 N-Channel General Purpose Dual Amplifier Sourced from P rocess 83. Absolute Maximum Ratings* Symbol T A = 25 ° C u n le ss oth e rw ise noted Parameter Value Units V dg Drain-Gate Voltage


    OCR Scan     		PDF NPDS8301 NPDS8302 NPDS8303 bSQ1130 S8302 S8303 NPDS8303