Si4800BDY-T1-E3
Abstract: Si4800BDY Si4800BDY-T1-GE3
Text: Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.0185 at VGS = 10 V 9 0.030 at VGS = 4.5 V 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
|
Original
|
Si4800BDY
Si4800BDY-T1-E3
Si4800BDY-T1-GE3
11-Mar-11
|
PDF
|
SiHF820AL
Abstract: IRF820A IRF820AL IRF820AS SiHF820A SiHF820AL-E3
Text: IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 17 Qgs (nC) 4.3 Qgd (nC) 8.5 Configuration
|
Original
|
IRF820AS,
SiHF820AS
IRF820AL,
SiHF820AL
O-263)
O-262)
18-Jul-08
IRF820A
IRF820AL
IRF820AS
SiHF820A
SiHF820AL-E3
|
PDF
|
IRF840LCPBF
Abstract: IRF840LC SiHF840LC SiHF840LC-E3
Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V VGS Rating
|
Original
|
IRF840LC,
SiHF840LC
18-Jul-08
IRF840LCPBF
IRF840LC
SiHF840LC-E3
|
PDF
|
D-PAK package
Abstract: si7980
Text: Si7980DP Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS Channel-1 20 Channel-2 20 RDS(on) (Ω) 0.022 at VGS = 10 V 0.025 at VGS = 4.5 V 0.015 at VGS = 10 V 0.019 at VGS = 4.5 V ID (A)a, f 8.0 8.0 8.0 8.0
|
Original
|
Si7980DP
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
D-PAK package
si7980
|
PDF
|
a3180
Abstract: TPCS8303 TPCS83
Text: S8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ S8303 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)
|
Original
|
TPCS8303
a3180
TPCS8303
TPCS83
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si7374DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0055 at VGS = 10 V 24 0.0066 at VGS = 4.5 V 24 VDS (V) 30 Qg (Typ.) 36 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
|
Original
|
Si7374DP
Si7374DP-T1-E3
Si7374DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si7980DP Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS Channel-1 20 Channel-2 20 RDS(on) (Ω) 0.022 at VGS = 10 V 0.025 at VGS = 4.5 V 0.015 at VGS = 10 V 0.019 at VGS = 4.5 V ID (A)a, f 8.0 8.0 8.0 8.0
|
Original
|
Si7980DP
18-Jul-08
|
PDF
|
3B marking
Abstract: No abstract text available
Text: S8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ S8303 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Machines and Tools • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)
|
Original
|
TPCS8303
3B marking
|
PDF
|
Untitled
Abstract: No abstract text available
Text: S8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ S8303 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Machines and Tools • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)
|
Original
|
TPCS8303
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si4812BDY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.016 at VGS = 10 V 9.5 0.021 at VGS = 4.5 V 7.7 • Halogen-free According to IEC 61249-2-21 Available • LITTLE FOOT Plus Power MOSFET
|
Original
|
Si4812BDY
Si4812BDY-T1-E3
Si4812BDY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product Si5440DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.019 at VGS = 10 V 6 0.024 at VGS = 4.5 V 6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Qg (Typ.) • TrenchFET Power MOSFET 9 nC
|
Original
|
Si5440DC
Si5440DC-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si7980DP Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS Channel-1 20 Channel-2 20 RDS(on) (Ω) 0.022 at VGS = 10 V 0.025 at VGS = 4.5 V 0.015 at VGS = 10 V 0.019 at VGS = 4.5 V ID (A)a, f 8.0 8.0 8.0 8.0
|
Original
|
Si7980DP
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Si4812BDY
Abstract: No abstract text available
Text: Si4812BDY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.016 at VGS = 10 V 9.5 0.021 at VGS = 4.5 V 7.7 • Halogen-free According to IEC 61249-2-21 Available • LITTLE FOOT Plus Power MOSFET
|
Original
|
Si4812BDY
Si4812BDY-T1-E3
Si4812BDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si7374DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0055 at VGS = 10 V 24 0.0066 at VGS = 4.5 V 24 VDS (V) 30 Qg (Typ.) 36 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
|
Original
|
Si7374DP
Si7374DP-T1-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.0185 at VGS = 10 V 9 0.030 at VGS = 4.5 V 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
|
Original
|
Si4800BDY
Si4800BDY-T1-E3
Si4800BDY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si7374DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0055 at VGS = 10 V 24 0.0066 at VGS = 4.5 V 24 VDS (V) 30 Qg (Typ.) 36 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
|
Original
|
Si7374DP
Si7374DP-T1-E3
Si7374DP-T1-GE3
11-Mar-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product Si5440DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.019 at VGS = 10 V 6 0.024 at VGS = 4.5 V 6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Qg (Typ.) • TrenchFET Power MOSFET 9 nC
|
Original
|
Si5440DC
Si5440DC-T1-GE3
11-Mar-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si4812BDY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.016 at VGS = 10 V 9.5 0.021 at VGS = 4.5 V 7.7 • Halogen-free According to IEC 61249-2-21 Available • LITTLE FOOT Plus Power MOSFET
|
Original
|
Si4812BDY
Si4812BDY-T1-E3
Si4812BDY-T1-GE3
11-Mar-11
|
PDF
|
IRF820S
Abstract: No abstract text available
Text: IRF820S, SIHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 24 Qgs (nC) 3.3 Qgd (nC) 13 Configuration Single D DESCRIPTION D2PAK (TO-263) Third generation Power MOSFETs from Vishay provide the
|
Original
|
IRF820S,
SIHF820S
O-263)
18-Jul-08
IRF820S
|
PDF
|
TPCS8303
Abstract: No abstract text available
Text: S8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ S8303 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)
|
Original
|
TPCS8303
TPCS8303
|
PDF
|
TPCS8303
Abstract: No abstract text available
Text: S8303 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSⅣ S8303 ○ リチウムイオン 2 次電池用 ○ ノートブック PC 用 ○ 携帯電子機器用 • 単位: mm 小型薄型で実装面積が小さい。
|
Original
|
TPCS8303
TPCS8303
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product Si5440DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.019 at VGS = 10 V 6 0.024 at VGS = 4.5 V 6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Qg (Typ.) • TrenchFET Power MOSFET 9 nC
|
Original
|
Si5440DC
Si5440DC-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product Si5440DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.019 at VGS = 10 V 6 0.024 at VGS = 4.5 V 6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Qg (Typ.) • TrenchFET Power MOSFET 9 nC
|
Original
|
Si5440DC
Si5440DC-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
S8302
Abstract: S8303 NPDS8301 NPDS8302 NPDS8303
Text: S e m i c o n d u c t o r " & NPDS8301 NPDS8302 S8303 D2 s2 S O -8 * * S1 D1 N-Channel General Purpose Dual Amplifier Sourced from P rocess 83. Absolute Maximum Ratings* Symbol T A = 25 ° C u n le ss oth e rw ise noted Parameter Value Units V dg Drain-Gate Voltage
|
OCR Scan
|
NPDS8301
NPDS8302
NPDS8303
bSQ1130
S8302
S8303
NPDS8303
|
PDF
|