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    S8302 Search Results

    S8302 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PS8302L2-AX Renesas Electronics Corporation 1 Mbps, High CMR, Analog Output Type, 8 mm Creepage 6-PIN SDIP Photocoupler, , / Visit Renesas Electronics Corporation
    PS8302L2-V-AX Renesas Electronics Corporation 1 Mbps, High CMR, Analog Output Type, 8 mm Creepage 6-PIN SDIP Photocoupler, , / Visit Renesas Electronics Corporation
    PS8302L-AX Renesas Electronics Corporation 1 Mbps, High CMR, Analog Output Type, 8 mm Creepage 6-PIN SDIP Photocoupler, , / Visit Renesas Electronics Corporation
    PS8302L-V-AX Renesas Electronics Corporation 1 Mbps, High CMR, Analog Output Type, 8 mm Creepage 6-PIN SDIP Photocoupler, , / Visit Renesas Electronics Corporation
    PS8302L-V-E3-AX Renesas Electronics Corporation 1 Mbps, High CMR, Analog Output Type, 8 mm Creepage 6-PIN SDIP Photocoupler Visit Renesas Electronics Corporation
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    S8302 Price and Stock

    Renesas Electronics Corporation PS8302L-E3-AX

    OPTOISOLATOR 5KV TRANS 6SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PS8302L-E3-AX Reel 2,000 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.7771
    		Buy Now
    Avnet Silica PS8302L-E3-AX 20 Weeks 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
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    Renesas Electronics America PS8302L-E3-AX Tape & Reel (TR) 2,000 1
    • 1 $4.14
    • 10 $2.927
    • 100 $2.3973
    • 1000 $1.85375
    • 10000 $1.7771
    		Buy Now

    Renesas Electronics Corporation PS8302L-V-AX

    SDIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PS8302L-V-AX 488 1
    • 1 $7.38
    • 10 $5.354
    • 100 $7.38
    • 1000 $3.66327
    • 10000 $3.57874
    		Buy Now
    Avnet Americas PS8302L-V-AX Ammo Pack 18 Weeks 360
    • 1 $5.588
    • 10 $5.588
    • 100 $5.588
    • 1000 $5.588
    • 10000 $5.588
    		Buy Now
    Renesas Electronics America PS8302L-V-AX Strip 488 1
    • 1 $7.38
    • 10 $5.354
    • 100 $4.4241
    • 1000 $3.66327
    • 10000 $3.57874
    		Buy Now

    Renesas Electronics Corporation PS8302L2-AX

    OPTOISOLATOR 5KV TRANS 6SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PS8302L2-AX 380 1
    • 1 $7.28
    • 10 $5.277
    • 100 $7.28
    • 1000 $3.61075
    • 10000 $3.52743
    		Buy Now
    Rochester Electronics PS8302L2-AX 20 1
    • 1 $4.01
    • 10 $4.01
    • 100 $3.77
    • 1000 $3.41
    • 10000 $3.41
    		Buy Now
    Renesas Electronics America PS8302L2-AX Strip 380 1
    • 1 $7.28
    • 10 $5.277
    • 100 $4.3607
    • 1000 $3.61075
    • 10000 $3.52743
    		Buy Now

    Ideal Power Inc 15DYS830-240125W-2-2.5

    AC/DC WALL MOUNT ADAPTER 24V 30W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 15DYS830-240125W-2-2.5 Box 245 1
    • 1 $10.48
    • 10 $10.48
    • 100 $9.3288
    • 1000 $8.95596
    • 10000 $8.95596
    		Buy Now

    Ideal Power Inc 15DYS830-240125W-1-2.5

    AC/DC WALL MOUNT ADAPTER 24V 30W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 15DYS830-240125W-1-2.5 Box 185 1
    • 1 $10.26
    • 10 $10.26
    • 100 $9.14135
    • 1000 $8.73561
    • 10000 $8.73561
    		Buy Now
    Find more S8302 price and stock on Findchips.com

    S8302 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S8302 Hamamatsu Original PDF

    S8302 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    schott 8270

    Abstract: 10-STAGE TP136 AJ2283 S830
    Text: Return To Product Page S83025F, S83025FM1, S83025FM2 Photomultipliers 76-mm 3-inch Hexagonal 10-Stage,Head-On PMTs BURLE S83025F, -M1, and -M2 are three-inch hexagonal, 10-stage photomultiplier tubes. Each employs a potassium-cesium-antimonide (bialkali)


    Original     		PDF S83025F, S83025FM1, S83025FM2 76-mm 10-Stage schott 8270 TP136 AJ2283 S830

    AJ2283

    Abstract: scintillator 10-STAGE TP136 S83021E B270 bialkali refraction S830 S83021EM2 S83021EM1
    Text: Return To Product Page S83021E, S83021EM1, S83021EM2 Photomultipliers 76-mm 3-inch Diameter 10-Stage, Head-On PMTs BURLE S83021E, -Ml, and -M2 are three-inch round, 10-stage photomultiplier tubes. Each employs a potassium-cesium-antimonide (bialkali) photocathode


    Original     		PDF S83021E, S83021EM1, S83021EM2 76-mm 10-Stage, 10-stage AJ2283 scintillator TP136 S83021E B270 bialkali refraction S830 S83021EM2 S83021EM1

    dual photodiode

    Abstract: Sensors PSD S8302 spot light size photodiode uA 741 T psd photodiode autofocus sensor transistor 1BW KPSD1018E02 SE-171
    Text: PHOTODIODE/PSD Photodiode/PSD sensor S8302 Dual photodiode or PSD switchable sensor S8302 is a unique light sensor whose active area can be switched to dual-photodiode or PSD by an external signal. Features l One-dimensional sensor with active area switchable


    Original     		PDF S8302 S8302 SE-171 KPSD1018E02 dual photodiode Sensors PSD spot light size photodiode uA 741 T psd photodiode autofocus sensor transistor 1BW KPSD1018E02

    dual photodiode

    Abstract: S8302 psd photodiode
    Text: PHOTODIODE/PSD Photodiode/PSD sensor S8302 Dual photodiode or PSD switchable sensor S8302 is a unique light sensor whose active area can be switched to dual-photodiode or PSD by an external signal. Features Applications l One-dimensional sensor with active area switchable


    Original     		PDF S8302 S8302 SE-171 KPSD1018E02 dual photodiode psd photodiode

    S83020

    Abstract: TP136 AJ2283 bialkali refraction bialkali S83020FM2 dynode TP-136 B270 nanosecond pulse generator
    Text: Return To Product Page S83020F, S83020FM1, S83020FM2 Photomultipliers 60-mm Hexagonal 10-Stage, Head-On PMTs BURLE S83020F, -Ml, and-M2 are 60-millimeter hexagonal, 10-stage photomultiplier tubes. Each employs a potassium-cesium-antimonide bialkali photocathode and a “teacup” first dynode followed by


    Original     		PDF S83020F, S83020FM1, S83020FM2 60-mm 10-Stage, 60-millimeter 10-stage S83020 TP136 AJ2283 bialkali refraction bialkali S83020FM2 dynode TP-136 B270 nanosecond pulse generator

    S8302

    Abstract: TPCS8302
    Text: S8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII S8302 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)


    Original     		PDF TPCS8302 S8302 TPCS8302

    SiHF740AL

    Abstract: IRF740AL IRF740AS SiHF740AL-E3 SiHF740AS SiHF740AS-E3 flyback xfmr 3.5 mh
    Text: IRF740AS, IRF740AL, SiHF740AS, SiHF740AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance


    Original     		PDF IRF740AS, IRF740AL, SiHF740AS SiHF740AL O-263) O-262) 18-Jul-08 IRF740AL IRF740AS SiHF740AL-E3 SiHF740AS-E3 flyback xfmr 3.5 mh

    S8302

    Abstract: 3B MARKING
    Text: S8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII S8302 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)


    Original     		PDF TPCS8302 S8302 3B MARKING

    IRF820A

    Abstract: SiHF820A SiHF820A-E3
    Text: IRF820A, SiHF820A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 3.0 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 17 Qgs (nC)


    Original     		PDF IRF820A, SiHF820A O-220 18-Jul-08 IRF820A SiHF820A-E3

    S8302

    Abstract: TPCS8302
    Text: S8302 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSIII S8302 ○ リチウムイオン 2 次電池用 ○ ノートブック PC 用 ○ 携帯電子機器用 • 単位: mm 小型薄型で実装面積が小さい。


    Original     		PDF TPCS8302 2-3R12009-09-29 S8302 TPCS8302

    S8302

    Abstract: No abstract text available
    Text: S8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII S8302 Lithium Ion Battery Applications Note Book PC Portable Machines and Tools Unit: mm • Has a small footprint. • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)


    Original     		PDF TPCS8302 S8302

    S8302

    Abstract: TPCS8302
    Text: S8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII S8302 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)


    Original     		PDF TPCS8302 S8302 TPCS8302

    Untitled

    Abstract: No abstract text available
    Text: S8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII S8302 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)


    Original     		PDF TPCS8302

    MDM 6600

    Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
    Text: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1


    Original     		PDF 9800-OERF-007 9800-OERF-005 MDM 6600 mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918

    IRF740LC

    Abstract: SiHF740LC SiHF740LC-E3
    Text: IRF740LC, SiHF740LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 0.55 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single TO-220 RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		PDF IRF740LC, SiHF740LC O-220 18-Jul-08 IRF740LC SiHF740LC-E3

    Untitled

    Abstract: No abstract text available
    Text: S8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII S8302 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)


    Original     		PDF TPCS8302

    Untitled

    Abstract: No abstract text available
    Text: S8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII S8302 Lithium Ion Battery Applications Note Book PC Portable Machines and Tools Unit: mm • Has a small footprint. • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)


    Original     		PDF TPCS8302

    IRF744

    Abstract: SiHF744 SiHF744-E3
    Text: IRF744, SiHF744 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 450 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 80 Qgs (nC) 12 Qgd (nC) 41 Configuration COMPLIANT • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available


    Original     		PDF IRF744, SiHF744 O-220 18-Jul-08 IRF744 SiHF744-E3

    S8302

    Abstract: TPCS8302
    Text: S8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII S8302 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)


    Original     		PDF TPCS8302 S8302 TPCS8302

    S8302

    Abstract: TPCS8302
    Text: S8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII S8302 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools • Unit: mm Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)


    Original     		PDF TPCS8302 S8302 TPCS8302

    S8302

    Abstract: S8303 NPDS8301 NPDS8302 NPDS8303
    Text: S e m i c o n d u c t o r " & NPDS8301 S8302 NPDS8303 D2 s2 S O -8 * * S1 D1 N-Channel General Purpose Dual Amplifier Sourced from P rocess 83. Absolute Maximum Ratings* Symbol T A = 25 ° C u n le ss oth e rw ise noted Parameter Value Units V dg Drain-Gate Voltage


    OCR Scan     		PDF NPDS8301 NPDS8302 NPDS8303 bSQ1130 S8302 S8303 NPDS8303

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


    OCR Scan     		PDF

    S8303

    Abstract: S8302 S8304
    Text: JFETs tß Device No. Discrete POWER & Signal Technologies National Semiconductor'“ General Purpose Dual JFETs C ase Style Drift Op. K ,J Char. jiWC Vqo 6 lD (mV( ÄV», (V) (|iA| Max Max V„s G os C M R R (|imho| (dB) (V) Max Min Min Max Max Min N PD S402


    OCR Scan     		PDF S5565 S5566 NPDS5911 S5912 NPDS8301 S8302 S8303 S8304 S8304