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    Vishay Siliconix SIHF840LCS-GE3

    MOSFET N-CH 500V 8A D2PAK
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    DigiKey SIHF840LCS-GE3 Reel 1,000
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    • 1000 $0.77204
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    Vishay Intertechnologies SIHF840LCS-GE3

    - Tape and Reel (Alt: SIHF840LCS-GE3)
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    Avnet Americas SIHF840LCS-GE3 Reel 12 Weeks 1,000
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    Mouser Electronics SIHF840LCS-GE3
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    TTI SIHF840LCS-GE3 Reel 1,000
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    SIHF840LC Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIHF840LCS-GE3 Vishay Siliconix MOSFET N-CH 500V 8A D2PAK Original PDF

    SIHF840LC Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		PDF IRF840LC, SiHF840LC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		PDF IRF840LC, SiHF840LC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    AN609

    Abstract: IRF840LC SiHF840LC
    Text: IRF840LC_RC, SiHF840LC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRF840LC SiHF840LC AN609, 18-Mar-10 AN609

    IRF840LCPBF

    Abstract: IRF840LC SiHF840LC SiHF840LC-E3
    Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V VGS Rating


    Original     		PDF IRF840LC, SiHF840LC 18-Jul-08 IRF840LCPBF IRF840LC SiHF840LC-E3

    IRF840LC

    Abstract: SiHF840LC SiHF840LC-E3
    Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		PDF IRF840LC, SiHF840LC 11-Mar-11 IRF840LC SiHF840LC-E3

    IRF840LCPBF

    Abstract: No abstract text available
    Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		PDF IRF840LC, SiHF840LC 2002/95/EC 11-Mar-11 IRF840LCPBF

    Untitled

    Abstract: No abstract text available
    Text: IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V VGS Rating • Reduced Ciss, Coss, Crss


    Original     		PDF IRF840LCS, IRF840LCL, SiHF840LCS SiHF840LCL 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V VGS Rating


    Original     		PDF IRF840LC, SiHF840LC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V VGS Rating • Reduced Ciss, Coss, Crss


    Original     		PDF IRF840LCS, IRF840LCL, SiHF840LCS SiHF840LCL 2002/95/EC O-262) O-263) 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V VGS Rating


    Original     		PDF IRF840LC, SiHF840LC 12-Mar-07

    transistor tip 1050

    Abstract: No abstract text available
    Text: IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V VGS Rating • Reduced Ciss, Coss, Crss


    Original     		PDF IRF840LCS, IRF840LCL, SiHF840LCS SiHF840LCL 2002/95/EC O-262) O-263) 11-Mar-11 transistor tip 1050

    AN609

    Abstract: IRF840LCL IRF840LCS SiHF840LCL SiHF840LCS
    Text: IRF840LCS_RC, IRF840LCL_RC, SiHF840LCS_RC, SiHF840LCL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF IRF840LCS IRF840LCL SiHF840LCS SiHF840LCL AN609, 18-Mar-10 AN609

    Untitled

    Abstract: No abstract text available
    Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		PDF IRF840LC, SiHF840LC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRF840LCL

    Abstract: IRF840 IRF840LCS SiHF840LC SiHF840LCL SiHF840LCL-E3 SiHF840LCS SiHF840LCS-E3
    Text: IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		PDF IRF840LCS, IRF840LCL, SiHF840LCS SiHF840LCL 18-Jul-08 IRF840LCL IRF840 IRF840LCS SiHF840LC SiHF840LCL-E3 SiHF840LCS-E3

    IRF840LC

    Abstract: IRF840LCL IRF840LCS SiHF840LC SiHF840LCL SiHF840LCL-E3 SiHF840LCS SiHF840LCS-E3 IRF840LCSTRR
    Text: IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single G G S RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		PDF IRF840LCS, IRF840LCL, SiHF840LCS SiHF840LCL 18-Jul-08 IRF840LC IRF840LCL IRF840LCS SiHF840LC SiHF840LCL-E3 SiHF840LCS-E3 IRF840LCSTRR

    transistor tip 1050

    Abstract: No abstract text available
    Text: IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V VGS Rating • Reduced Ciss, Coss, Crss


    Original     		PDF IRF840LCS, IRF840LCL, SiHF840LCS SiHF840LCL 2002/95/EC O-262) O-263) 2011/65/EU 2002/95/EC. 2002/95/EC transistor tip 1050

    Untitled

    Abstract: No abstract text available
    Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		PDF IRF840LC, SiHF840LC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		PDF IRF840LCS, IRF840LCL, SiHF840LCS SiHF840LCL 12-Mar-07

    transistor tip 1050

    Abstract: No abstract text available
    Text: IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V VGS Rating • Reduced Ciss, Coss, Crss


    Original     		PDF IRF840LCS, IRF840LCL, SiHF840LCS SiHF840LCL 2002/95/EC O-262) O-263) 11-Mar-11 transistor tip 1050

    Untitled

    Abstract: No abstract text available
    Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		PDF IRF840LC, SiHF840LC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12