Untitled
Abstract: No abstract text available
Text: IRF820S, SiHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching
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Original
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PDF
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IRF820S,
SiHF820S
2002/95/EC
O-263)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRF820S, SiHF820S, IRF820L, SiHF820L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) () VGS = 10 V 3.0 Qg (Max.) (nC) 24 Qgs (nC) 3.3 Qgd (nC) 13 Configuration Single D D2PAK (TO-263)
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Original
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PDF
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IRF820S,
SiHF820S
IRF820L,
SiHF820L
O-263)
O-262)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: IRF820S, SiHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching
|
Original
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PDF
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IRF820S,
SiHF820S
2002/95/EC
O-263)
18-Jul-08
|
Untitled
Abstract: No abstract text available
Text: IRF820S, SiHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching
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Original
|
PDF
|
IRF820S,
SiHF820S
2002/95/EC
O-263)
11-Mar-11
|
IRF820S
Abstract: No abstract text available
Text: IRF820S, SIHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 24 Qgs (nC) 3.3 Qgd (nC) 13 Configuration Single D DESCRIPTION D2PAK (TO-263) Third generation Power MOSFETs from Vishay provide the
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Original
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PDF
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IRF820S,
SIHF820S
O-263)
18-Jul-08
IRF820S
|
Untitled
Abstract: No abstract text available
Text: IRF820S, SIHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 24 Qgs (nC) 3.3 Qgd (nC) 13 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating
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Original
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PDF
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IRF820S,
SIHF820S
SMD-220
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: IRF820S, SIHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 24 Qgs (nC) 3.3 Qgd (nC) 13 Configuration Single D RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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Original
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PDF
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IRF820S,
SIHF820S
SMD-220
18-Jul-08
|
Untitled
Abstract: No abstract text available
Text: IRF820S, SiHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching
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Original
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PDF
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IRF820S,
SiHF820S
2002/95/EC
O-263)
11-Mar-11
|
AN609
Abstract: IRF820S
Text: IRF820S_RC, SiHF820S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Original
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PDF
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IRF820S
SiHF820S
AN609,
12-Mar-10
AN609
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Untitled
Abstract: No abstract text available
Text: IRF820S, SiHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching
|
Original
|
PDF
|
IRF820S,
SiHF820S
2002/95/EC
O-263)
O-26electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
